transistors 1 2sb1678 silicon pnp epitaxial planer type for low-frequency amplification features ? low collector to emitter saturation voltage v ce(sat) ? large peak collector current i cp ? mini power type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing absolute maximum ratings t a = 25 c unit: mm parameter symbol rating unit collector to base voltage v cbo ? 30 v collector to emitter voltage v ceo ? 20 v emitter to base voltage v ebo ? 7v peak collector current i cp ? 5a collector current i c ? 3a collector power dissipation * p c 1w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = ? 10 v, i e = 0 ? 100 na emitter cutoff current i ebo v eb = ? 5 v, i c = 0 ? 100 na collector to emitter voltage v ceo i c = ? 1 ma, i b = 0 ? 20 v emitter to base voltage v ebo i e = ? 10 a, i c = 0 ? 7v forward current transfer ratio * 1, 2 h fe v ce = ? 2 v, i c = 200 ma 90 625 collector to emitter saturation voltage * 1 v ce(sat) i c = ? 3 a, i b = ? 0.1 a ? 1v collector output capacitance c ob v cb = ? 20 v, i e = 0, f = 1 mhz 85 pf transition frequency f t v cb = ? 6 v, i e = 50 ma, f = 200 mhz 120 mhz electrical characteristics t a = 25 c 3 c marking symbol: 2k 1: emitter 2: collector 3: base minip3 type package note) * : printed circuit board copper foil for collector portion area: 1.0 cm 2 or more, thickness: 1.7 mm absolute maximum rating p c without heat sink shall be 0.5 w 4.5 ?.1 3.0 ?.15 45? 2.6 ?.1 0.4 max. 1.6 ?.2 1.5 ?.1 4.0 2.5 ?.1 3? +0.25 ?.20 1.0 +0.1 ?.2 0.5 ?.08 0.4 ?.04 0.4 ?.08 32 1 1.5 ?.1 3? note) * 1: pulse measurement * 2: rank classification rank p q r h fe 90 to 135 120 to 205 180 to 625
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