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d a t a sh eet product speci?cation file under discrete semiconductors, sc14 1995 sep 13 discrete semiconductors bfg135 npn 7ghz wideband transistor
1995 sep 13 2 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 description npn silicon planar epitaxial transistor in a plastic sot223 envelope, intended for wideband amplifier applications. the small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. the distribution of the active areas across the surface of the device gives an excellent temperature profile. pinning pin description 1 emitter 2 base 3 emitter 4 collector fig.1 sot223. handbook, halfpage 4 1 2 3 msb002 - 1 top view quick reference data limiting values in accordance with the absolute maximum system (iec 134). note 1. t s is the temperature at the soldering point of the collector tab. symbol parameter conditions min. typ. max. unit v cbo collector-base voltage open emitter - - 25 v v ceo collector-emitter voltage open base - - 15 v i c dc collector current - - 150 ma p tot total power dissipation up to t s = 145 c (note 1) - - 1 w h fe dc current gain i c = 100 ma; v ce = 10 v; t j = 25 c 80 130 - f t transition frequency i c = 100 ma; v ce = 10 v; f = 1 ghz; t amb = 25 c - 7 - ghz g um maximum unilateral power gain i c = 100 ma; v ce = 10 v ; f = 500 mhz; t amb = 25 c - 16 - db i c = 100 ma; v ce = 10 v ; f = 800 mhz; t amb = 25 c - 12 - db v o output voltage d im = - 60 db; i c = 100 ma; v ce = 10 v ; r l = 75 w ; t amb = 25 c; f (p+q - r) = 793.25 mhz - 850 - mv symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 25 v v ceo collector-emitter voltage open base - 15 v v ebo emitter-base voltage open collector - 2 v i c dc collector current - 150 ma p tot total power dissipation up to t s = 145 c (note 1) - 1 w t stg storage temperature - 65 150 c t j junction temperature - 175 c
1995 sep 13 3 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 thermal characteristics note 1. t s is the temperature at the soldering point of the collector tab. characteristics t j = 25 c unless otherwise speci?ed. notes 1. d im = - 60 db (din 45004b); i c = 100 ma; v ce = 10 v; r l = 75 w ; t amb = 25 c; v p = v o at d im = - 60 db; f p = 445.25 mhz; v q = v o - 6 db; f q = 453.25 mhz; v r = v o - 6 db; f r = 455.25 mhz; measured at f (p+q - r) = 443.25 mhz. 2. d im = - 60 db (din 45004b); i c = 100 ma; v ce = 10 v; r l = 75 w ; t amb = 25 c; v p = v o at d im = - 60 db; f p = 795.25 mhz; v q = v o - 6 db; f q = 803.25 mhz; v r = v o - 6 db; f r = 805.25 mhz; measured at f (p+q - r) = 793.25 mhz. symbol parameter conditions thermal resistance r th j-s thermal resistance from junction to soldering point up to t s = 145 c (note 1) 30 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb = 10 v - - 1 m a h fe dc current gain i c = 100 ma; v ce = 10 v 80 130 - c c collector capacitance i e = i e = 0; v cb = 10 v; f = 1 mhz - 2 - pf c e emitter capacitance i c = i c = 0; v eb = 0.5 v; f = 1 mhz - 7 - pf c re feedback capacitance i c = 0; v ce = 10 v; f = 1 mhz - 1.2 - pf f t transition frequency i c = 100 ma; v ce = 10 v; f = 1 ghz; t amb = 25 c - 7 - ghz g um maximum unilateral power gain i c = 100 ma; v ce = 10 v; f = 500 mhz; t amb = 25 c - 16 - db i c = 100 ma; v ce = 10 v; f = 800 mhz; t amb = 25 c - 12 - db v o output voltage note 1 - 900 - mv note 2 - 850 - mv d 2 second order intermodulation distortion i c = 90 ma; v ce = 10 v; v o = 50 dbmv; t amb = 25 c; f (p+q) = 450 mhz; f p = 50 mhz; f q = 400 mhz - - 58 - db i c = 90 ma; v ce = 10 v; v o = 50 dbmv; t amb = 25 c; f (p+q) = 810 mhz; f p = 250 mhz; f q = 560 mhz - - 53 - db
1995 sep 13 4 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 list of components (see test circuit) note 1. components c4, l3, l6 and r2 are mounted on the underside of the pcb. the circuit is constructed on a double copper-clad printed circuit board with ptfe dielectric ( e r = 2.2); thickness 1 16 inch; thickness of copper sheet 1 32 inch. designation description value unit dimensions catalogue no. c1, c3, c5, c6 multilayer ceramic capacitor 10 nf 2222 590 08627 c2, c7 multilayer ceramic capacitor 1 pf 2222 851 12108 c4 (note 1) miniature ceramic plate capacitor 10 nf 2222 629 08103 l1 microstripline 75 w length 7 mm; width 2.5 mm l2 microstripline 75 w length 22mm; width 2.5 mm l3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm; winding pitch 1 mm l4 microstripline 75 w length 19 mm; width 2.5 mm l5 ferroxcube choke 5 m h 3122 108 20153 l6 (note 1) 0.4 mm copper wire ? 25 nh length 30 mm r1 metal ?lm resistor 10 k w 2322 180 73103 r2 (note 1) metal ?lm resistor 200 w 2322 180 73201 r3, r4 metal ?lm resistor 27 w 2322 180 73279 fig.2 intermodulation distortion and second order intermodulation distortion test circuit. handbook, full pagewidth mbb284 dut v bb c3 r1 l1 c1 c2 l2 input 75 r2 l6 r3 r4 l3 c4 c7 c5 c6 l5 output 75 v cc l4 w w
1995 sep 13 5 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 fig.3 intermodulation distortion test printed-circuit board. handbook, full pagewidth mbb299 75 input 75 output c6 c7 c5 l5 v cc v bb r1 c3 c1 c2 l1 l2 l4 r3 r2 r4 c4 l6 l3 w w handbook, full pagewidth mbb298 80 mm 60 mm handbook, full pagewidth mbb297
1995 sep 13 6 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 fig.4 power derating curve. handbook, halfpage 0 50 100 200 0.8 0.6 0.2 0 0.4 mbb300 150 t ( c) o s p tot (w) 1.0 1.2 fig.5 dc current gain as a function of collector current. handbook, halfpage 0 160 120 80 40 40 80 160 mbb294 120 i (ma) c fe h v ce = 10 v; t j = 25 c. fig.6 feedback capacitance as a function of collector-base voltage. i e = 0; f = 1 mhz; t j = 25 c. handbook, halfpage 0 3 2 1 0 4 20 mbb295 8 12 16 v (v) cb c re (pf) fig.7 transition frequency as a function of collector current. v ce = 10 v; f = 1 ghz; t amb = 25 c. handbook, halfpage 0 40 80 160 8 6 2 0 4 mbb296 120 i (ma) c (ghz) t f
1995 sep 13 7 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 fig.8 intermodulation distortion as a function of collector current. v ce = 10 v; v o = 900 mv; t amb = 25 c; f (p+q - r) = 443.25 mhz. handbook, halfpage 20 120 45 70 65 mbb292 60 55 50 40 60 80 100 i (ma) c d (db) im fig.9 intermodulation distortion as a function of collector current. v ce = 10 v; v o = 850 mv; t amb = 25 c; f (p+q - r) = 793.25 mhz. handbook, halfpage 20 120 45 70 65 mbb293 60 55 50 40 60 80 100 i (ma) c d (db) im fig.10 second order intermodulation distortion as a function of collector current. v ce = 10 v; v o = 50 dbmv; t amb = 25 c; f (p+q) = 450 mhz. handbook, halfpage 20 120 45 70 65 mbb291 60 55 50 40 60 80 100 d 2 (db) i (ma) c fig.11 second order intermodulation distortion as a function of collector current. v ce = 10 v; v o = 50 dbmv; t amb = 25 c f (p+q) = 810 mhz. handbook, halfpage 20 120 45 70 65 mbb290 60 55 50 40 60 80 100 d 2 (db) i (ma) c
1995 sep 13 8 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 fig.12 load impedance as a function of output power. v ce = 7.5 v; f = 900 mhz. handbook, halfpage 0 0.25 1.0 ?0 0 20 mea951 0.50 p out (w) 10 30 0.75 40 z ( w ) l 50 60 r l x l fig.13 load impedance as a function of output power. v ce = 10 v; f = 900 mhz. handbook, halfpage 0 0.5 0 10 30 mea952 1 p out (w) 20 40 1.5 50 z ( w ) l r l x l fig.14 load impedance as a function of output power. v ce = 12.5 v; f = 900 mhz. handbook, halfpage 0 0.5 0 10 30 mea953 1 p out (w) 20 40 1.5 60 z ( w ) l r l x l 50 fig.15 input impedance as a function of output power. v ce = 7.5 v; f = 900 mhz. handbook, halfpage 0 0.25 1.0 0 2 6 mea948 0.50 p out (w) 4 8 0.75 10 z ( w ) i r i x i
1995 sep 13 9 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 fig.16 input impedance as a function of output power. v ce = 10 v; f = 900 mhz. handbook, halfpage 0 1.5 0 2 6 mea949 0.5 p out (w) 4 8 1 10 z ( w ) i r i x i fig.17 input impedance as a function of output power. v ce = 12.5 v; f = 900 mhz. handbook, halfpage 0 1.5 0 2 6 mea950 0.5 p out (w) 4 8 1 10 z ( w ) i r i x i fig.18 efficiency as a function of output power. f = 900 mhz. handbook, halfpage 0 0.5 1.5 40 50 70 mea947 1 h (%) p out (w) v = ce 12.5 v 60 80 10 v 7.5 v fig.19 output power as a function of input power. f = 900 mhz. handbook, halfpage 0 100 300 1.5 0 0.5 1 mea945 200 p out (w) p in (mw) v = ce 12.5 v 10 v 7.5 v
1995 sep 13 10 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 fig.20 power gain as a function of output power. f = 900 mhz. handbook, halfpage 0 0.5 1.5 10 0 2 6 mea946 1 g p (db) p out (w) v = ce 12.5 v 10 v 7.5 v 4 8 fig.21 maximum unilateral power gain as a function of frequency. i c = 100 ma; v ce = 10 v; t amb = 25 c. handbook, halfpage 40 0 20 30 10 mbb289 10 2 10 3 10 4 10 f (mhz) g um (db)
1995 sep 13 11 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 fig.22 common emitter input reflection coefficient (s 11 ). i c = 100 ma; v ce = 10 v; t amb = 25 c; z o = 50 w. . handbook, full pagewidth 10 25 50 100 250 10 25 50 100 250 0 + j ?j mbb288 10 25 50 100 250 fig.23 common emitter forward transmission coefficient (s 21 ). i c = 100 ma; v ce = 10 v; t amb = 25 c. handbook, full pagewidth mbb286 0 o 30 o 60 o 90 o 120 o 150 o 180 o 150 o 120 o 90 o 60 o 30 o 40 20 30 50 10
1995 sep 13 12 philips semiconductors product speci?cation npn 7ghz wideband transistor bfg135 fig.24 common emitter reverse transmission coefficient (s 12 ). i c = 100 ma; v ce = 10 v; t amb = 25 c. handbook, full pagewidth mbb285 0 o 30 o 60 o 90 o 120 o 150 o 180 o 150 o 120 o 90 o 60 o 30 o 0.2 0.1 0.3 0.4 0.5 0.6 fig.25 common emitter output reflection coefficient (s 22 ). i c = 100 ma; v ce = 10 v; t amb = 25 c; z o = 50 w. . handbook, full pagewidth 10 25 50 100 250 10 25 50 100 250 0 + j ?j mbb287 10 25 50 100 250
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