6mbp 30rh-060 igbt ipm 600v 630a intelligent power module ( rh-series ) n n maximum ratings and characteristics ? absolute maximum ratings ( t c =25c ) items symbols ratings units min. max. dc bus voltage v dc 0 450 dc bus voltage (surge) v dc(surge) 0 500 dc bus voltage (short o p erating) v sc 400 collector-emitter voltage v ces 0 600 inverter continuous i c 30 collector 1ms i cp 60 a current duty=56.6% -i c 30 collector power dissipation one transistor p c 85 w voltage of power supply for driver v cc -0.3 20 input signal voltage v in 0 v z input signal current i in 1 ma alarm signal voltage v alm 0 v cc v alarm signal current i alm 15 ma junction temperature t j 150 operating temperature t op -20 100 c storage temperature t stg -40 125 isolation voltage a.c. 1min. v iso 2500 v screw torque mounting (m4) 2.0 nm ? electrical characteristics of power circuit ( at t j =25c, v cc =15v ) items symbols conditions min. typ. max. units collector current at off signal input i ces v ce =600v, input terminal open 1.0 ma collector-emitter saturation voltage v ce(sat) i c =30a 2.7 v forward voltage of fwd v f -i c =30a 3.5 v ? electrical characteristics of control circuit ( at t j =25c, v cc =15v ) items symbols conditions min. typ. max. units current of p-line side driver (one unit) i ccp f sw =0~15khz, t c =-20~100c 2.0 5.0 current of n-line side driver (three units) i ccn f sw =0~15khz, t c =-20~100c 4.0 10.0 on 1.00 1.35 1.70 off 1.25 1.60 1.95 v input zener voltage v z r in =20k w 8.0 igbt chips over heating protec. temp. level t joh surface of igbt chip 150 hysteresis t jh 20 inverter collector current protection level i oc n-side, (n1-n2 open) 44 54 64 a over current detecting time t doc t j =25c 5.0 7.0 s alarm signal hold time t alm 1.0 2.0 ms over current detecting resistance value r oc 3.7 m w under voltage protection level v uv 11.0 12.5 hysteresis v h 0.2 0.8 ? dynamic characteristics ( at t c =t j =125c, v cc =15v ) items symbols conditions min. typ. max. units t on i c =30a, v dc =300v 0.5 switching time t off 3.5 s t rr i f =30a, v dc =300v 0.5 ? thermal characteristics items symbols conditions min. typ. max. units r th (j-c) inverter igbt 1.47 thermal resistance r th (j-c) diode 2.10 c/w r th (c-f) with thermal compound 0.05 n n outline drawing v in( th ) input signal threshold voltage v v ma c v
6mbp 30rh-060 igbt ipm 600v 630a n n equivalent circuit drivers include following fun c tions over-current protection circuit amplifier for driver a under-voltage protection circuit ? igbt chip overheating protection
6mbp 30rh-060 igbt ipm 600v 630a n n inverter 0 1 2 3 4 0 10 20 30 40 50 collector current vs. collector-emitter voltage v cc =15v, t j =25c collector current : i c [a] collector-emitter voltage : v ce [v] 0 1 2 3 4 0 10 20 30 40 50 collector current vs. collector-emitter voltage v cc =15v, t j =125c collector current : i c [a] collector-emitter voltage : v ce [v] 0 1 2 3 4 0 10 20 30 40 50 25c t j =125c forward voltage vs. forward current forward current : i f [a] forward voltage : v f [v] 10 -2 10 -1 10 0 10 -1 10 0 10 1 igbt fwd transient thermal resistance thermal resistance : r th(j-c) [c/w] pulse width : p w [sec] 0 10 20 30 40 50 0 1 2 3 4 e rr e off e on switching loss vs. collector current v dc =300v, v cc =15v, t j =25c switching loss : e on , e off , e rr [mj/cycle] 0 10 20 30 40 50 0 1 2 3 4 e rr e off e on switching loss vs. collector current v dc =300v, v cc =15v, t j =125c switching loss : e on , e off , e rr [mj/cycle]
6mbp 30rh-060 igbt ipm 600v 630a n n outline drawing weight: 50g specification is subject to change without notice january 99
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