cmdd3003 surface mount low leakage silicon switching diode description: the central semiconductor cmdd3003 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a super mini tm surface mount package, designed for switching applications requiring a extremely low leakage diode. marking code: 03c maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 180 v average rectified current i o 200 ma continuous forward current i f 600 ma peak repetitive forward current i frm 700 ma peak forward surge current, tp=1.0s i fsm 2.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =125v 1.0 na i r v r =125v, t a =150c 3.0 a i r v r =180v 10 na i r v r =180v, t a =150c 5.0 a bv r i r =5.0a 200 v v f i f =1.0ma 0.62 0.72 v v f i f =10ma 0.72 0.83 v v f i f =50ma 0.80 0.89 v v f i f =100ma 0.83 0.93 v v f i f =200ma 0.87 1.10 v v f i f =300ma 0.90 1.15 v c t v r =0, f=1.0mhz 4.0 pf sod-323 case r1 (8-january 2010) www.centralsemi.com
cmdd3003 surface mount low leakage silicon switching diode lead code: 1) cathode 2) anode marking code: 03c sod-323 case - mechanical outline www.centralsemi.com r1 (8-january 2010)
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