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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC4757 description high breakdown voltage- : v cbo = 1500v (min) high switching speed low saturation voltage applications horizontal deflection output for high resolution display. high speed switching power suppl y output applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 5 v i c collector current- continuous 7 a i cp collector current-pulse 14 a i b b base current- continuous 3.5 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4757 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma ; i b = 0 600 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1.2a b 5.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1.2a b 1.5 v i cbo collector cutoff current v cb = 1500v ; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 5v ; i c = 0 10 a h fe-1 dc current gain i c = 1a ; v ce = 5v 8 h fe-2 dc current gain i c = 5a ; v ce = 5v 4 8 f t current-gain?bandwidth product i c = 0.1a ; v ce = 10v 1 3 mhz c ob output capacitance i e = 0 ; v cb = 10v;f test = 1.0mhz 175 pf switching times resistive load t stg storage time 2.5 s t f fall time i cp = 5a , i b1 = 1a ; i b2 = -2a r l =39 0.2 s isc website www.iscsemi.cn 2 inchange semiconductor isc product specification isc silicon npn power transistor 2SC4757 isc website www.iscsemi.cn inchange semiconductor isc product specification isc silicon npn power transistor 2SC4757 isc website www.iscsemi.cn 4 |
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