z01xxxa ? january 1995 sensitive gate triacs symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) tl= 70 c 0.8 a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 8.3 ms 8.5 a tp = 10 ms 8 i 2 ti 2 t value for fusing tp = 10 ms 0.32 a 2 s di/dt critical rate of rise of on-state current i g =50ma di g /dt = 0.1 a/ m s. repetitive f = 50 hz 10 a/ m s non repetitive 50 t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s at 2mm from case 260 c absolute ratings (limiting values) i t(rms) =0.8a v drm = 400v to 800v i gt 3ma to 25ma features symbol parameter voltage unit dmsn v drm v rrm repetitive peak off-state voltage t j = 125 c 400 600 700 800 v the z01xxxa series of triacs uses a high performance top glass pnpn technology. these parts are intended for general purpose applications where gate high sensitivity is required. description a1 a2 g to92 (plastic) 1/5
p g (av) = 0.1 w p gm = 2 w (tp = 20 m s) i gm = 1 a (tp = 20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient 150 c/w rth(j-l) junction to leads for d.c 80 c/w rth(j-l) junction to leads for a.c 360 conduction angle (f=50hz) 60 c/w thermal resistances symbol test conditions quadrant sensitivity unit 03 07 09 10 i gt v d =12v (dc) r l =140 w tj= 25 c i-ii-iii max 3 5 10 25 ma iv max 5 7 10 25 v gt v d =12v (dc) r l =140 w tj= 25 c i-ii-iii-iv max 1.5 v v gd v d =v drm r l =3.3k w tj= 125 c i-ii-iii-iv min 0.2 v tgt v d =v drm i g = 40ma i t =1.1a di g /dt = 0.5a/ m s tj= 25 c i-ii-iii-iv typ 2 m s i h *i t = 50 ma gate open tj= 25 c max 7 10 10 25 ma i l i g =1.2i gt tj= 25 c i-iii-iv typ 7 10 10 25 ma ii typ 14 20 20 50 v tm *i tm = 1.1a tp= 380 m s tj= 25 c max 1.5 v i drm i rrm v d =v drm v r =v rrm tj= 25 c max 10 m a tj= 110 c max 200 dv/dt * vd=67%v drm gate open tj= 110 c min 10 20 50 100 v/ m s typ 20 50 150 400 (dv/dt)c * (di/dt)c = 0.35 a/ms tj= 110 c min 2 5 v/ m s typ 1 1 * for either polarity of electrode a 2 voltage with reference to electrode a 1 electrical characteristics ordering information z0107ma triac top glass current package : a = to92 voltage sensitivity ? z01xxxa 2/5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1 =30 o =90 o =60 o =120 o = 180 o 180 o i (a) t(rms) p(w) fig.1 : maximum rms power dissipation versus rms on-state current. 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 0.2 0.4 0.6 0.8 1 i (a) t(rms) = 180 o tlead( c) o fig.3 : rms on-state current versus case tempera- ture. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 igt tj( c) o ih -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 20406080100120140 0 0.2 0.4 0.6 0.8 1-65 -75 -85 -95 -105 -115 -125 p(w) tamb ( c) o tlead ( c) o rth(j-l) rth(j-a) fig.2 : correlation between maximum rms power dissipation and maximum allowable temperature (tamb and tlead). 1e-3 1e-2 1e-1 1 e+0 1 e+1 1e +2 5 e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp (s) fig.4 : relative variation of thermal impedance junction to ambient versus pulse duration. 1 10 100 1000 0 1 2 3 4 5 6 7 i (a) tsm tj initial = 25 c o number of cycles fig.6 : non repetitive surge peak on-state current versus number of cycles. ? z01xxxa 3/5
i (a). i 2 t(a 2 s) tsm 110 0.1 1 10 100 tj initial = 25 c o i tsm i 2 t tp(ms) fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 00.511.522.533.54 0.1 1 10 i (a) tm tj initial 25 c o tj max v (v) tm tj max vto =0.95v rt =0.420 fig.8 : on-state characteristics (maximum values). ? z01xxxa 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-tho mson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. package mechanical data to92 (plastic) d f a e b a c ref. dimensions millimeters inches typ. min. max. typ. min. max. a 1.35 0.053 b 4.7 0.185 c 2.54 0.100 d 4.4 4.8 0.173 0.189 e 12.7 0.500 f 3.7 0.146 a 0.45 0.017 marking : type number weight : 0.2 g ? z01xxxa 5/5
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