CHEMF24PT c h e n m k o e n t e r p r i s e c o . , l t d surface mount power management (dual transistor) a p p l i c a t i o n f e a t u r e * power switching circuit in a single package. * power management circuit * mounting cost and area can be cut in half. * both the 2sc4617 & chdtc114e in one package. c i r c u i t 1 3 6 4 r2 r1 2sc4617 limiting v alues i n a c c o r d a n c e w i t h t h e a b s o l u t e m a x i m u m r a t i n g s y s t e m ( i e c 6 0 1 3 4 ) . note s y m b o l p a r a m e t e r c o n d i t i o n s m i n . m a x . u n i t v cbo collector-base voltage - 60 v v ceo 50 v i c - 150 dc output current ma p c total power dissipation - 150 mw t stg storage temperature -55 +150 o c t j junction temperature - 150 o c v ebo collector-emitter voltage emitter-base voltage - - 7 v note.1 1. 120mw per element must not be exceeded. tr1:voltage 50 volts current 150 mampere dtr2:voltage 50 volts current 50 mampere tr1 dtr2 * built in bias resistor(r1=10kw, typ. ) 2 0 04-07 * s m a l l s u r f a c e m o u n t i n g t y p e . (sot-563) sot-563 marking * fh (5) 1.5~1.7 0.5~0.6 0.09~0.18 sot-563 dimensions in millimeters 0.50 0.50 0.9~1.1 1.5~1.7 0.15~0.3 1.1~1.3 (4) (1) (3)
chdtc114e limiting v alues in accordance with the absolute maxim um rating system (iec 60134). note 1. characteristics of built-in transistor. chdtc114e chara cteristics note pulse test: tp300us; d0.02. symbol parameter conditions min. max. unit v cc supply voltage - 50 v v in input voltage -10 +40 v i o - 50 i c(max.) dc output current - 100 ma p c - 150 mw t stg storage temperature -55 +150 o c t j junction temperature - 150 o c symbol p arameter conditions min. typ. max. unit v ioff) input off voltage i o =100ua; v cc =5.0v - 0.5 v v i(on) input on voltage i o =10ma; v o =0.3v 3.0 - - - v v v o(on) output voltage i o =10ma; i i =0.5ma - 0.3 0.1 i i input current v i =5v - - 0.88 ma i c(off) output current r 1 input resistor v i =0v; v cc =50v g1 dc current gain i o =5ma; v o =5.0v - 0.5 30 - 13 7 kw r 2 /r 1 resistor ratio 0.8 1.2 - - 10 1.0 ua f t transition frequency i e =-5ma, v ce =10.0v f=100mhz = - - 250 mhz t amb =2 5 c unless otherwise specited. note.1 power dissipation note.2 2. each terminal mounter on a recommended land. - - 2sc4617 chara cteristics t amb =2 5 c unless otherwise specited. symbol p arameter conditions min. typ. max. unit bvebo collector-emitter breakdown voltage - 60 v collector-base breakdown voltage 50 - - - v v emitter-base breakdown voltage collector cut-off current - - 100 na emitter cut-off current collector-emitter saturation voltage h fe dc current gain - 100 180 v collector output capacitance - - 2 f t transition frequency - - 180 mhz 7 bvcbo bvceo icbo iebo cob vce(sat) - - na 390 - - - pf vce=12v,ie=-2ma,f=100mhz vcb=12v,ie=0ma,f=1mhz ic=50ma,ib=5ma vce=6v,ic=1ma vcb=60v veb=7v ie=50ua ic=1ma ic=50ua note 1.pulse test: tp300us; d0.02. 0.4 - 3.5
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHEMF24PT ) 2sc4617 typical electrical characteristics 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 v ce =6v 25c ?55c 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25c i b =0a 0.40ma 0.45ma 0.50ma 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25c 3a 6a 9a 12a 15a 18a 21a 24a 27a 30a fig.1 grounded emitter propagation characteristics fig.2 grounded emitter output characteristics (1) fig.3 grounded emitter output characteristics (2) ta = 100 o c 55 o c 25 o c collector current : i c ( ma) base to emitter voltage : v be ( v) collector current : i c ( ma) collector to emitter voltage : v ce ( v) collector current : i c ( ma) collector to emitter voltage : v ce ( v) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 collector saturation voltage : v i c /i b =10 ce(sat) ( ta=100c v) collector current : i c 25c ( ma) ?55c fig.4 collector-emitter saturation voltage vs. collector current dc current gain : h fe 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 collector current : i c ( i c /i b =50 ma) fig.5 dc current gain vs. collector current ta=100c fig. 6 gain bandwidth product vs. emitter current emitter current : i 25c e ( ?55c ma) transition frequency : f t ( mhz) 50 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 100 200 500 ta=25c v ce =6v
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHEMF24PT ) chdtc114e typical electrical characteristics o u t p u t c u r r e n t : i o ( a ) d c c u r r e n t g a i n : g i 1 0 0 2 0 0 5 0 0 1 m 2 m 5 m 1 0 m 2 0 m 5 0 m 1 0 0 m 1 k 5 0 0 2 0 0 1 0 0 5 0 2 0 1 0 5 2 1 v o 5 v t a = = 1 0 0 c 2 5 c - 4 0 c f i g . 3 d c c u r r e n t g a i n v s . o u t p u t c u r r e n t o u t p u t c u r r e n t : i o ( a ) o u t p u t v o l t a g e : v o ( o n ) ( v ) 1 0 0 2 0 0 5 0 0 1 m 2 m 5 m 1 0 m 2 0 m 5 0 m 1 0 0 m 1 5 0 0 m 2 0 0 m 1 0 0 m 5 0 m 2 0 m 1 0 m 5 m 2 m 1 m l o / l i 2 0 t a = = 1 0 0 c 2 5 c - 4 0 c f i g . 4 o u t p u t v o l t a g e v s . o u t p u t c u r r e n t i n p u t v o l t a g e : v i ( o n ) ( v ) o u t p u t c u r r e n t : i o ( a ) 1 0 0 2 0 0 5 0 0 1 m 2 m 5 m 1 0 m 2 0 m 5 0 m 1 0 0 m 1 0 0 5 0 2 0 1 0 5 2 1 5 0 0 m 2 0 0 m 1 0 0 m v o = = 0 . 3 v t a 4 0 o o o c 2 5 c 1 0 0 c f i g . 1 i n p u t v o l t a g e v s . o u t p u t c u r r e n t ( o n c h a r a c t e r i s t i c s ) i n p u t v o l t a g e : v i ( o f f ) ( v ) o u t p u t c u r r e n t : i o ( a ) 0 3 . 0 1 0 m 1 2 m 5 m 1 m 2 0 0 5 0 0 1 0 0 2 0 5 0 1 0 2 5 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 v c c = 5 v t a 1 0 0 c 2 5 c - 4 0 c f i g . 2 o u t p u t c u r r e n t v s . i n p u t v o l t a g e ( o f f c h a r a c t e r i s t i c s ) o o o o o o o o o = - =
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