sep.2000 typ ~~ ~ + - z a b s d e g h k j l n p f r q c t u v w m r "y" f "x" ~~~- + dimensions inches millimeters a 2.83 71.8 b 1.18 30.0 c 0.35 9.0 d 2.55 64.8 e 0.59 15.0 f 0.54 13.7 g 2.32 58.8 h 2.21 56.2 j 0.48 12.08 k 0.40 10.16 l 1.60 40.64 m 0.05 1.20 dimensions inches millimeters n 0.16 4.0 p 0.02 0.6 q 0.55 14.0 r 0.20 5.0 s 0.35 9.0 t 0.14 3.5 u 0.45 11.5 v 0.71 18.0 w 0.06 1.5 x 0.16 4.0 y 0.16 4.0 z 0.08 2.0 description: mitsubishi three-phase diode bridge modules are designed for use in applications requiring rectifi- cation of three-phase ac lines into dc voltage. each module consists of six diodes and the interconnect required to form a complete three- phase bridge circuit. each diode is electrically insulated from the mounting base plate for easy mounting on a common heatsink with other components. features: u isolated mounting u metal base plate u low thermal impedance applications: u motor control u inverters u ups ordering information: RM25TN-2H outline drawing and circuit diagram RM25TN-2H
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units repetitive peak reverse voltage v rrm 1600 volts non-repetitive peak reverse voltage v rsm 1700 volts recommended ac input voltage e a 440 volts dc output current (t b = 100 c) i o 25 amperes surge (non-repetitive) forward current (one half cycle at 60hz, peak value) i fsm 400 amperes i 2 t for fusing (value for one cycle of surge current) i 2 t 667 a 2 sec junction temperature t j -40 ~ +125 c storage temperature t stg -40 ~ +125 c operating frequency f 1000 hz maximum mounting torque m3.5 mounting screw C 0.78 ~ 0.98 n m maximum mounting torque m3.5 terminal screw C 0.78 ~ 0.98 n m isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms electrical and thermal characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units repetitive reverse current i rrm t j = 125 c, v rrm = rated C C 8.0 ma forward voltage drop v fm t j = 25 c, i fm = 25a, C C 1.5 volts instantaneous meaurement thermal resistance r th(j-b) junction to base plate C - 2.0 c/ w thermal resistance r th(b-f) base to fin, thermal grease applied C C 0.3 c/w isolation resistance at 500v dc 10 C C m w between terminal and base plate RM25TN-2H dc output current, i o , (amperes) base plate temperature , t b , ( c) allowable dc output current vs. base plate temperature 120 100 80 60 40 20 01020 0 30 40
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