august 2004 revision 1 1/11 0.75a source/1.2a sink min gate drive active miller clamp feature two steps turn-off with adjustable level and delay desaturation detection fault status output negative gate drive ability input compatible with pulse transformer or optocoupler separate sink and source outputs for easy gate drive uvlo protection 2kv esd protection description TD350 is an advanced gate driver for igbt and power mosfet. control and protection functions are included and allow the design of high reliability systems. innovative active miller clamp function avoids the need of negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver TD350 includes a two-level turn-off feature with adjustable level and delay. this function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit condition. same delay is applied at turn-on to prevent pulse width distortion. TD350 also includes an igbt desaturation protection and a fault status output. TD350 is compatible with both pulse transformer and optocoupler signals. applications 1200v 3-phase inverter motor c ontrol ups systems pin connections (top view) order codes d so-14 (plastic micropackage) coff in lvoff outh vh desat TD350 nc nc fault clamp outl gnd vref vl 5 1 2 6 4 3 7 10 14 13 9 11 12 8 part number temperature range package packaging TD350id -40, +125c so tube TD350idt tape & reel TD350 advanced igbt/mosfet driver
TD350 block diagram 2/11 1 block diagram figure 1: schematic block diagram table 1: pin description name pin number type function in 1 analog input input vref 2 analog output +5v reference voltage fault 3 digital output fault status output nc 4 not connected coff 5 timing capacitor turn off delay nc 6 not connected lvoff 7 analog input turn off level gnd 8 power supply signal ground clamp 9 analog output miller clamp vl 10 power supply negative supply outl 11 analog output gate drive output (sink) outh 12 analog output gate drive output (source) vh 13 power supply positive supply desat 14 analog input desaturation protection outh in vref outl vh desat TD350 control block fault nc coff clamp gnd 16v desat pulse transformer delay off vref vl -10v optionnal vref vref lvoff vh off level uvlo vref nc vh
absolute maximum ratings TD350 3/11 2 absolute maximum ratings table 2: key parameters and their absolute maximum ratings symbol parameter value unit vhl maximum supply voltage (vh - vl) 28 v vh maximum vh voltage vs. gnd 28 v vl minimum vl voltage vs. gnd -12 v vout voltage on outh, outl, clamp pins vl-0.3 to vh+0.3 v vdes voltage on desat, fault, lvoff pin -0.3 to vh+0.3 v vter voltage on other pins (in, coff, vref) -0.3 to 7 v pd power dissipation 500 mw tstg storage temperature -55 to 150 c tj maximum junction temperature 150 c rhja thermal resistance junction-ambient 125 c/w rhjc thermal resistance junction-case 22 c/w esd electrostatic discharge 2 kv table 3: operating conditions symbol parameter value unit vh positive supply voltage vs. gnd uvlo to 26 v vl negative supply voltage vs. gnd 0 to -10 v vh-vl maximum total supply voltage 26 v toper operating free air temperature range -40 to 125 c
TD350 electrical characteristics 4/11 3 electrical characteristics table 4: t amb = -20 to 125c, vh=16v, vl=-10v (unless otherwise specified) symbol parameter test condition min typ max unit input vton in turn-on threshold voltage 0.8 1.0 v vtoff in turn-off threshold voltage 4.0 4.2 v tonmin minimum pulse width 100 135 220 ns iinp in input current 1 a voltage reference - note 1 1) recommended capacitor range on vref pin is 10nf to 100nf. vref voltage reference t=25 c tmin functional description TD350 5/11 4 functional description 4.1 input the input is compatible with optocouplers or pulse transformers. the input is triggered by the signal edge and allows the use of low-sized, low-cost pulse transformer. input is active low (output is high when input is low) to ease the use of optocoupler. when driven by a pulse transformer, the input pulse (positive and negative) width must be larger than the minimum pule width t onmin . 4.2 voltage reference a voltage reference is used to create accurate timing for the two-level turn-off with external resistor and capacitor. 4.3 desaturation protection desaturation protection ensures the protection of the igbt in the event of overcurrent. when the desat volt age goes higher that 7v, the output is driven low (with 2-level turn-off if applicable). the fault output is activated. the fault state is exited at the next falling edge of in input. a programmable blanking time is used to allow enough time for igbt saturation. blanking time is provided by an internal current source and external capacitor. desat i nput can also be used with an external comparator for overcurrent or over temperature detection. 4.4 active miller clamp a miller clamp allows the control of the miller current during a high dv/dt situation and can avoid the use of a negative supply voltage. during turn-off, the gate voltage is monitored and the clamp output is activated when gate voltage goes below 2v (relative to gnd). the clamp voltage is vl+3v max for a miller current up to 500ma. the clamp is disabled when the in input is triggered again. 4.5 two level turn-off the two-level turn-off is used to increase the reliability of the application. during turn-off, gate voltage can be reduced to a programmable level in order to reduce the igbt current (in the event of over-current). this action avoids both dangerous overvoltage across the igbt, and rbsoa problems, especially at short circuit turn-off. turn-off (t a ) delay is programmable through an external resistor and capacitor for accurate timing. turn-off delay (t a ) is also used to delay the input signal to prevent distortion of input pulse width. 4.6 minimum on time in order to ensure the proper operation of the 2- level turn-off function, the input on time (t win ) must be greater than the t winmin value: t winmin =t a +2*r del *c off r del is the internal discharge resistor and c off is the external timing capacitor. input signals smaller than ta are ignored. input signals larger than t winmin are transmitted to the output stage after the t a delay with minimum width distortion ( ? t w =t wout -t win ). for an input signal width t win between t a and t winmin , the output width t wout is reduced below t win (pulse distortion) and the igbt could be partially turned on. these input signals should be avoided during normal operation. 4.7 output the output stage is able to sink 2.3a and source 1.5a typical at 25 c (1.2a/0.75a minimum over the full temperature range). separated sink and source outputs allow independent gate charge and discharge control without an extra external diode.
TD350 functional description 6/11 4.8 fault status output fault output is used to signal a fault event (desaturation, uvlo) to a controller. the fault pin is designed to drive an optocoupler. 4.9 undervoltage protection undervoltage detection protects the application in the event of a low vh supply voltage (during start- up or a fault situation). during undervoltage, the outh pin is open and the outl pin is driven low (active pull-down for vh>2v, passive pull-down for vh<2v). fault output signals the undervoltage state and is reset only when undervoltage state disappears. figure 2: detailed internal schematic vh out 2v uvh uvl vccmin fault gnd vh vl fault vref 250ua vh desat rev. 3 clamp outh vref coff outl s2 comp_delayoff 2.5v comp_input in 1v-4v comp_desat 7.2v lvoff vh uvlo vref control block 2-level off driver comp_clamp 2v delay
timing diagrams TD350 7/11 5 timing diagrams figure 3: turn-on and turn-off figure 4: minimum on time figure 5: desaturation fault in out vce vh level vge vh level vl level clamp vl level ta ta clamp threshold lvoff coff open twin twout miller plateau in out tatwinmin in out desat 2.5v vh level coff fault vl level ta ta 7v open lvoff ta desat blanking time
TD350 typical performance curves 8/11 6 typical performance curves figure 6: supply current vs temperature figure 7: low level output voltage vs temp. figure 8: desaturation threshold vs temperature figure 9: voltage reference vs temperature figure 10: high level output voltage vs temp. figure 11: desaturation source current vs temp. 0.0 1.0 2.0 3.0 4.0 5.0 -50-250 255075100125 temp ( c) in (ma) 0.0 1.0 2.0 3.0 -50 -25 0 25 50 75 100 125 temp ( c) vol-vl (v) iosink=20ma iosink=200ma iosink=500ma 0.0 1.0 2.0 3.0 -50 -25 0 25 50 75 100 125 temp ( c) vol-vl (v) iosink=20ma iosink=200ma iosink=500ma 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 temp ( c) vdes (v) 4.80 4.90 5.00 5.10 5.20 -50 -25 0 25 50 75 100 125 temp ( c) vref (v) 0.0 1.0 2.0 3.0 4.0 -50 -25 0 25 50 75 100 125 temp ( c) vh-voh (v) iosource=20ma iosource=200ma iosource=500ma 0.0 1.0 2.0 3.0 4.0 -50 -25 0 25 50 75 100 125 temp ( c) vh-voh (v) iosource=20ma iosource=200ma iosource=500ma 0 100 200 300 400 500 -50 -25 0 25 50 75 100 125 temp ( c) ides (ua)
application diagrams TD350 9/11 7 application diagrams figure 12: single supply igbt drive with active miller clamp and 2-level turn-off figure 13: large igbt drive with negative gate drive and desaturation detection figure 14: use of desat input for direct overcurrent detection outh in outl vh desat fault nc coff clamp gnd 16v vref vl lvoff nc vref TD350 control block desat delay off off level uvlo 5.1v vh vref vref vh outh in outl vh desat fault nc coff clamp gnd 16v pulse transformer vref vl -10v lvoff nc vref TD350 control block desat delay off off level uvlo vref vref vh vref vh outh in outl vh desat fault nc coff clamp gnd 16v pulse transformer vref vl lvoff nc vref TD350 control block desat delay off off level uvlo vref vh vref vh vref vref
TD350 package mechanical data 10/11 8 package mechanical data dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.5 0.019 c1 45? (typ.) d 8.55 8.75 0.336 0.344 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 f 3.8 4.0 0.149 0.157 g 4.6 5.3 0.181 0.208 l 0.5 1.27 0.019 0.050 m 0.68 0.026 s? (max.) so-14 mechanical data po13g 8
revision history TD350 11/11 9 revision history date revision description of changes 01 august 2004 1 first release information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech repubic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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