? by semikron 0698 b 16 C 77 skiip 83 ahb 15 absolute maximum ratings symbol conditions 1) values units bridge rectifier v rrm i d i fsm /i tsm i2t t heatsink = 80 c t p = 10 ms; sin. 180 c, t j = 25 c t p = 10 ms; sin. 180 c, t j = 25 c 1500 125 1000 5000 v a a a2s igbt chopper v ces v ges i c i cm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 1200 20 95 / 65 190 / 130 v v a a freewheeling diode 2) v rrm i f i fm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 1200 38 / 26 76 / 52 v a a t j t j t stg v isol diode & igbt thyristor ac, 1 min. C 40 ... + 150 C 40 ... + 125 C 40 ... + 125 2500 c c c v characteristics symbol conditions 1) min. typ. max. units diode - rectifier v f v to r t r thjh i f = 100 a t j = 125 c t j = 125 c t j = 125 c per diode C C C C 1,15 0,8 3,5 C C C C 0,7 v v m w k/w thyristor - rectifier v t v t (to) r t r thjh i gd v gt i gt i h i l dv/dt cr di/dt cr i f = 120 a t j = 25 c t j = 125 c t j = 125 c per thyristor t j = 125 c C C C C 5 C C C C 500 C C C C C C C C 250 600 C C 1,8 1,1 5 0,9 C 3 150 C C C 125 v v m w k/w ma v ma ma ma v/ m s a/ m s igbt - chopper v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 75 a t j = 25 (125) c v cc = 600 v; v ge = 15 v i c = 75 a; t j = 125 c r gon = r goff = 15 w inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt C C C C C C C C 2,5(3,1) 35 70 450 70 18 5,0 C 3,0(3,7) 70 140 600 100 C C 0,35 v ns ns ns ns mj nf k/w t j = 25 c t j = 25 c t j = 125 c miniskiip 8 semikron integrated intelligent power skiip 83 ahb 15 half controlled 3-phase bridge rectifier + igbt braking chopper case m8a ul recognized file no. e63532 ? specification of temperature sensor see part a ? common characteristics see page b 16 C 4 options ? also available with uncontrolled rectifier (called 83 anb 15) ? also available with powerful chopper, for characteristics please refer to skiip 83 ac 12 ? also available with full controlled rectifier (called 83 atb 15) 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery)
b 16 C 78 0698 ? by semikron skiip 83 ahb 15 characteristics symbol conditions 1) min. typ. max. units diode 2) - freewheeling v f = v ec v to r t i rrm q rr e off r thjh i f = 25 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 25 a; v r = C 600 v di f /dt = C 500 a/ m s v ge = 0 v, t j = 125 c per diode C C C C C C C 2,0(1,8) 1,0 32 25 4,5 1,0 C 2,5(2,3) 1,2 44 C C C 1,2 v v m w a m c mj k/w temperature sensor r ts t = 25 / 100 c 1000 / 1670 w mechanical data m 1 case case to heatsink, si units mechanical outline see pages b 16 C13 and b 16 C 14 2,5 C m8a 3,5 nm miniskiip 8 semikron integrated intelligent power skiip 83 ahb 15 half controlled 3-phase bridge rectifier + igbt braking chopper case m8a
? by semikron 0698 b 16 C 79 0 15 30 45 60 75 90 105 120 135 150 012345 17v 13v 15v 11v 9v 7v i c [a] 82ac1201 v ce [v] 0 15 30 45 60 75 90 105 120 135 150 012345 9v 7v 13v 17v 11v 15v i c [a] 82ac1202 v ce [v] 0 2 4 6 8 10 12 14 16 18 20 0 120 240 360 480 600v 800v v ge [v] 82ac1205 q g [nc] fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) fig. 1 typ. output characteristic, t p = 80 m s; 25 c fig. 2 typ. output characteristic, t p = 80 m s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce v ge = 0 v f = 1 mhz i cpuls = 75 a 82ac1203.xls 0 5 10 15 20 25 30 0 30 60 90 120 150 i c a e mj eon eoff t j = 125 c v ce = 600 v v ge = 15 v r g = 15 w 82ac1204.xls 0 6 12 18 24 0 10203040 r g w e mj eon eoff t j = 125 c v ce = 600 v v ge = 15 v i c = 75 a
b 16 C 80 0698 ? by semikron fig. 7 gate trigger characteristics
b 16 C 4 0698 ? by semikron t j = 150 c v ge = 15 v t sc = 10 m s l ext < 25 nh t j = 150 c v ge = 15 v t j = 150 c v ge = 3 15 v fig. 9 turn-off safe operating area (rbsoa) of the igbt fig. 10 safe operating area at short circuit of the igbt fig. 7 rated current of the igbt i cop / i c = f (t h ) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i cop /i c mini1207 t h [c] 0 0,5 1 1,5 2 2,5 0 500 1000 1500 i cpuls /i c mini1209 v ce [v] 0 2 4 6 8 10 12 0 500 1000 1500 note: *allowed numbers of short circuit:<1000 *time between short circuit:>1s i csc /i cn mini1210 v ce [v] fig. 11 typ. freewheeling diode forward characteristic fig. 12 forward characteristic of the input bridge diode miniskiip 1200 v
miniskiip 8 input bridge part skiip 82 anb 08 skiip 83 anb 08 skiip 81 anb 15 skiip 82 anb 15 skiip 83 anb 15 skiip 83 ahb 15 skiip 83 atb 15 circuit anb case m8a
miniskiip 8 input bridge part skiip 82 anb 08 skiip 83 anb 08 skiip 81 anb 15 skiip 82 anb 15 skiip 83 anb 15 skiip 83 ahb 15 skiip 83 atb 15 case m8a layout and connections for the customers printed circuit board pin connection diode bridge anb halfcontrolled ahb thyristor bridge atb 1 reserved reserved g2 bot 2~ 1~ 1~ 1 3 ~ 2 ~ 2 ~ 2 4 reserved reserved g1 bot 5 reserved g2 top g2 top 6 ~ 3 ~ 3 ~ 3 7 reserved g1 top g1 top 8 reserved g3 top g3 top 9 reserved reserved g3 bot 10 + + + 11C C C 12 + + + 13C C C 14 gate br gate br gate br 15 br br br 16 t + t + t + 17t Ct Ct C circuit ahb circuit atb
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