sep.2000 0.64 mm sq. pin (5 typ.) m q s e t-(4 typ.) a c f n d b n p-thd.(2 typ.) k g l h 12345 r-dia.(4 typ.) e c u-dia.(2 typ.) 5. fo 4. vc 3. ci 2. sr 1. v1 label rref rfo amp rg c e temp out1 out2 sens sink fo sr in vcc ci th gnd v 1 f o s r c i v c 1 5 2 4 3 j description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features: u complete output power circuit u gate drive circuit u protection logic C short circuit C over current C over temperature C under voltage applications: u inverters u ups u motion/servo control u power supplies ordering information: example: select the complete part number from the table below -i.e. PM400HSA120 is a 1200v, 400 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 400 120 dimensions inches millimeters a 3.86 98.0 b 3.46 88.0 c 3.15 0.01 80.0 0.25 d 2.76 0.01 70.0 0.25 e 2.56 65.0 f 1.57 40.0 g 1.34 +0.04/-0.02 34.0 +1.0/-0.5 h 1.16 29.5 j 0.79 20.0 k 0.71 18.0 dimensions inches millimeters l 0.63 16.0 m 0.59 15.0 n 0.35 9.0 p metric m8 m8 q 0.28 7.0 r 0.26 dia. dia. 6.5 s 0.10 2.5 t 0.100 2.54 u 0.08 dia. 2.0 dia. outline drawing and circuit diagram mitsubishi intelligent power modules PM400HSA120 flat-base type insulated package
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m6 mounting screws 3.92~5.88 n m mounting torque, m8 main terminal screws 8.83~10.8 n m module weight (typical) 630 grams supply voltage protected by oc and sc (v d = 13.5 - 16.5v, inverter part) v cc(prot.) 800 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v 1 -v c )v d 20 volts input voltage (applied between c 1 -v c )v cin 10 volts fault output supply voltage (applied between f o -v c )v fo 20 volts fault output current (fault current of f o terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 5v) v ces 1200 volts collector current, (t c = 25 c) i c 400 amperes peak collector current, (t c = 25 c) i cp 800 amperes collector dissipation p c 2315 watts electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level inverter part oc -20 c t j 125 c, v d = 15v 480 650 amperes short circuit trip level inverter part sc -20 c t j 125 c, v d = 15v 650 930 amperes over current delay time t off(oc) v d = 15v 5 m s over temperature protection ot trip level 100 110 120 c ot r reset level 85 95 105 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts uv r reset level 12.5 volts supply voltage v d applied between v 1 -v c 13.5 15 16.5 volts circuit current i d v d = 15v, v cin = 5v, v 1 -v c 2330ma input on threshold voltage v th(on) applied between c 1 -v c 1.2 1.5 1.8 volts input off threshold voltage v th(off) applied between c 1 -v c 1.7 2.0 2.3 volts pwm input frequency f pwm 3- f sinusoidal 15 20 khz fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms sr terminal output voltage v sr -20 c t j 125 c, rin = 6.8 k w 4.5 5.1 5.6 volts mitsubishi intelligent power modules PM400HSA120 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector cutoff current i ces v ce = v ces , t j = 25 c 1.0 ma v ce = v ces , t j = 125 c10ma emitter-collector voltage v ec -i c = 400a, v d = 15v, v cin = 5v 2.5 3.5 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 400a, 2.3 3.2 volts t j = 25 c, pulsed v d = 15v, v cin = 0v, i c = 400a, 2.1 2.9 volts t j = 125 c, pulsed inductive load switching times t on 0.5 1.4 2.5 m s t rr v d = 15v, v cin = 0 ? 5v 0.2 0.4 m s t c(on) v cc = 600v, i c = 400a 0.4 1.0 m s t off t j = 125 c 2.5 3.5 m s t c(off) 0.6 1.1 m s thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each igbt 0.054 c/watt r th(j-c)f each fwdi 0.10 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.038 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across c1-e2 terminals 0 ~ 800 volts v d applied between v 1 -v c 15 1.5 volts input on voltage v cin(on) applied between c 1 -v c 0 ~ 0.8 volts input off voltage v cin(off) applied between c 1 -v c 4.0 ~ v sr volts pwm input frequency f pwm using application circuit 5 ~ 20 khz minimum dead time t dead input signal 3 3.5 m s mitsubishi intelligent power modules PM400HSA120 flat-base type insulated package
sep.2000 mitsubishi intelligent power modules PM400HSA120 flat-base type insulated package 0 1 2 3 4 5 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 0 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 200 400 600 0 10 1 10 2 10 3 10 -1 collector reverse current, -i c , (amperes) reverse recovery time, t rr , ( m s) reverse recovery current vs. collector current (typical) 10 0 10 1 10 1 reverse recovery current, i rr , (amperes) 10 2 10 3 t rr i rr 01 3 10 1 emitter-collector voltage, v ec , (volts) collector reverse current, -i c , (amperes) 10 2 10 3 t j = 25 o c t j = 125 o c v d = 15v 2 diode forward characteristics 10 12 20 14 16 18 2 4 6 10 1 10 2 10 3 10 -1 collector current, i c , (amperes) switching times, t on , t off , ( m s) switching time vs. collector current (typical) t on 10 0 10 1 t off t c(off) t c(on) v cc = 600v v d = 15v inductive load t j = 125 o c 01234 0 200 output characteristics (typical) v cin = 0v collector-emitter voltage, v ce(sat) , (volts) collector current, i c , (amperes) 5 400 600 v d = 17v 13 15 v cin = 0v v d = 15v t j = 25 o c t j = 125 o c v cin = 0v i c = 400v t j = 25 o c t j = 125 o c t j = 25 o c v cc = 600v v d = 15v inductive load t j = 125 o c time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.054 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 0.1 o c/w 10 -2 10 -3
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