february2010.version2.0 magnachipsemiconductorltd . 1 MDS5951Cdual nchanneltrenchmosfet absolutemaximumratings(t a =25 o cunlessotherwisenoted) characteristics symbol rating unit drainsourcevoltage v dss 60 v gatesourcevoltage v gss 20 v t a =25 o c 4.5 a continuousdraincurrent (not e4) t a =70 o c i d 3.6 a pulseddraincurrent (note3) i dm 20 a t a =25 o c 2.0 powerdissipationforsingleoperation(note2) t a =70 o c p d 1.28 w junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient(steadysta te) (note1) r ja 62.5 thermalresistance,junctiontocase r jc 34.0 o c/w MDS5951 dualnchanneltrenchmosfet60v,4.5a,50m generaldescription theMDS5951usesadvancedmagnachips mosfettechnology,whichprovideslowonstate resistance,highswitchingperformanceand excellentreliability. applications inverters generalpurposeapplications features v ds =60v i d =4.5a@v gs =10v r ds(on) <50m @v gs =10v <60m @v gs =4.5v 1(s 1 ) 2(g 1 ) 3(s 2 ) 4(g 2 ) 8(d 1 ) 7(d 1 ) 6(d 2 ) 5(d 2 ) d1 g1 s1 d2 g2 s2 www..net
february2010.version2.0 magnachipsemiconductorltd . 2 MDS5951Cdual nchanneltrenchmosfet orderinginformation partnumber temp.range package packing rohsstatus MDS5951urh 55~150 o c soic8 tape&reel halogenfree electricalcharacteristics(t a =25 o cunlessotherwisenoted) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 60 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.0 2.0 3.0 v zerogatevoltagedraincurrent i dss v ds =60v,v gs =0v 1 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 a v gs =10v,i d =4.5a 38 50 drainsourceonresistance r ds(on) v gs =4.5v,i d =3.0a 46 60 m forwardtransconductance g fs v ds =10v,i d =3.3a 11 s dynamiccharacteristics totalgatecharge(v gs =10v) 9.0 10.5 totalgatecharge(v gs =4.5v) q g 4.4 gatesourcecharge q gs 1.5 gatedraincharge q gd v ds =30v,i d =4.5a,v gs =10v 2.0 nc inputcapacitance c iss 420 reversetransfercapacitance c rss 25 outputcapacitance c oss v ds =30v,v gs =0v,f=1.0mhz 50 pf turnondelaytime t d(on) 4.5 turnonrisetime t r 20 turnoffdelaytime t d(off) 15 turnofffalltime t f v gs =10v,v ds =30v, r l =6.7,r gen =5 9.5 ns drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =1.0a,v gs =0v 0.7 1.1 v bodydiodereverserecoverytime t rr 21 30 ns bodydiodereverserecoverycharge q rr i f =4.5a,di/dt=100a/s 25 nc note: 1.surfacemountedrf4boardwith2oz.copper.pdsm isbasedonr ja andthemaximumallowedjunctiontemperatureof150 c. 2.pdisbasedont j(max) =150c,usingr ja, 3.pulsetest:pulsewidth 300us,dutycycle 2%,pulsewidthlimitedbyjunctiontemperaturet j(max) =150 c. 4.staticcharacteristicsareobtainedusing<300spul ses,dutycycle0.5%max. www..net
february2010.version2.0 magnachipsemiconductorltd . 3 MDS5951Cdual nchanneltrenchmosfet fig.5transfercharacteristics fig.1onregioncharacteristics fig.2on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevari ationwith temperature fig.4on resistancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source current and temperature 0 1 2 3 4 5 0 5 10 15 vgs=10.0v vgs=5.0v vgs=4.0v vgs=3.0v i d (a) v ds (volts) 0 5 10 15 20 25 30 0 10 20 30 40 50 60 70 80 90 100 110 120 v gs =10v v gs =4.5v r ds(on) [m ] i d [a] 75 50 25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs =4.5v i d =3.0a v gs =10v i d =4.5a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 2 4 6 8 10 0 40 80 120 160 t a =25 t a =125 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0 1 2 3 4 5 0 5 10 15 20 125 25 i d (a) v gs (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 125 25 i s [a] v sd [v] www..net
february2010.version2.0 magnachipsemiconductorltd . 4 MDS5951Cdual nchanneltrenchmosfet fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10maximumdraincurrent vs.ambienttemperature fig.11 transient thermal response curve 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 note:i d =4.5a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 c rss c oss c iss capacitance[pf] v ds [v] 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 1ms 10s 1s dc 100ms 10ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 1 2 3 4 5 i d ,draincurrent[a] t a ,casetemperature[ ] 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 1 10 0 10 1 10 2 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r ja =62.5 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), normalizedthermalresponse t 1 ,rectangularpulseduration[sec] www..net
february2010.version2.0 magnachipsemiconductorltd . 5 MDS5951Cdual nchanneltrenchmosfet physicaldimensions 8leadssoic dimensionsareinmillimetersunlessotherwisespec ified www..net
february2010.version2.0 magnachipsemiconductorltd . 6 MDS5951Cdual nchanneltrenchmosfet worldwidesalessupportlocations u.s.a sunnyvaleoffice 787n.maryave.sunnyvale ca94085u.s.a tel:14086365200 fax:14082132450 email:usasales@magnachip.com u.k knyvetthousethecauseway, stainesmiddx,tw183ba,u.k. tel:+44(0)1784895000 fax:+44(0)1784895115 email:uksales@magnachip.com japan osakaoffice 3f,shinosakamt2bldg3536 miyaharayodogawaku osaka,5320003japan tel:81663949160 fax:81663949150 email:osakasales@magnachip.com taiwanr.o.c 2f,no.61,chowizestreet,neihu taipei,114taiwanr.o.c tel:886226577898 fax:886226578751 email:taiwansales@magnachip.com china hongkongoffice suite1024,oceancentre5cantonroad, tsimshatsuikowloon,hongkong tel:85228289700 fax:85228028183 email:chinasales@magnachip.com shenzhenoffice room1803,18/f internationalchamberofcommercetower fuhuaroad3cbd,futiandistrict,china tel:8675588315561 fax:8675588315565 email:chinasales@magnachip.com shanghaioffice roome,8/f,liaosheninternationalbuilding1068 wuzhongroad,(c)201103 shanghai,china tel:862164051521 fax:862165051523 email:chinasales@magnachip.com korea 891,daechidong,kangnamgu seoul,135738korea tel:82269033451 fax:82269033668~9 email:koreasales@magnachip.com disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd. www..net
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