1/9 october 2001 stb80nf55-06 n-channel 55v - 0.005 w - 80a d 2 pak stripfet ? power mosfet (1) current limited by package (2) i sd 80a, di/dt 300 a/ m s, v dd v (br)dss ,tj t jmax n typical r ds (on) = 0.005 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization n add suffix at4o for ordering in tape & reel description this power mosfet is the latest development of stmicroelectronics unique asingle feature size ? o strip-based process. the resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n solenoid and relay drivers n motor control, audio amplifiers n dc-dc converters n automotive environment absolute maximum ratings ( l ) pulse width limi ted by safe operating area type v dss r ds(on) i d stb80nf55-06 55 v <0.0065 w 80 a symbol parameter value unit v ds drain-source voltage (v gs =0) 55 v v dgr drain-gate voltage (r gs =20k w )55v v gs gate- source voltage 20 v i d (1) drain current (continuos) at t c =25 c80a i d drain current (continuos) at t c = 100 c80a i dm ( l ) drain current (pulsed) 320 a p tot total dissipation at t c =25 c 300 w derating factor 2 w/ c dv/dt(2) peak diode recovery voltage slope 7 v/ns t stg storage temperature 65 to 175 c t j max. operating junction temperature 175 c d 2 pak 1 3 (to-263) internal schematic diagram
stb80nf55-06 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.5 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 80 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 650 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 55 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c10 m a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 234v r ds(on) static drain-source on resistance v gs =10v,i d = 40 a 0.005 0.0065 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =40 a 50 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 7300 pf c oss output capacitance 980 pf c rss reverse transfer capacitance 250 pf
3/9 stb80nf55-06 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 27v, i d = 40a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 40 ns t r rise time 240 ns q g total gate charge v dd = 44v, i d = 80a, v gs = 10v 190 256 nc q gs gate-source charge 38 nc q gd gate-drain charge 66 nc symbol parameter test condit ions min. typ. max. unit t d(off) turn-off-delay time v dd = 27v, i d = 40a, r g =4.7 w, v gs = 4.5v (see test circuit, figure 3) 260 ns t f fall time 75 ns t d(off) off-voltage rise time vclamp =44v, i d =80a r g =4.7 w, v gs = 10v 70 ns t r(voff) off voltage rise time (see test circuit, figure 5) 185 ns t f fall time 240 ns t c cross-over time 110 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 80 a i sdm (1) source-drain current (pulsed) 320 a v sd (2) forward on voltage i sd = 80a, v gs =0 1.5 v t rr reverse recovery time i sd = 80a, di/dt = 100a/ m s, v dd = 20v, t j = 150 c (see test circuit, figure 5) 80 ns q rr reverse recovery charge 0.24 m c i rrm reverse recovery current 6 a safe operating area thermal impedence
stb80nf55-06 4/9 gate charge vs gate-source voltage static drain-source on resistance transconductance transfer characteristics output characteristics capacitance variations
5/9 stb80nf55-06 normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized drain-source breakdown vs temperature normalized on resistance vs temperature
stb80nf55-06 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 stb80nf55-06 tape and reel shipment (suffix ot4o)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stb80nf55-06 8/9 tape and reel shipment (suffix ot4o)* tube shipment (no suffix)* d 2 pak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 15.9 16.1 0.626 0.633 p2 1.9 2.1 0.075 0.082 r 50 1.574 w 23.7 24.3 0.933 0.956 tape mechanical data
9/9 stb80nf55-06 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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