d s 14003 rev. e1-2 1 of 2 es3a/b - es3d/b es3a/b - es3d/b 3.0a surface mount super-fast rectifier features smb smc dim min max min max a 3.30 3.94 5.59 6.22 b 4.06 4.57 6.60 7.11 c 1.96 2.21 2.75 3.18 d 0.15 0.31 0.15 0.31 e 5.00 5.59 7.75 8.13 g 0.10 0.20 0.10 0.20 h 0.76 1.52 0.76 1.52 j 2.00 2.62 2.00 2.62 all dimensions in mm a b c d g h e j ab, bb, cb, db suffix designates smb package a, b, c, d, suffix designates smc package glass passivated die construction super-fast recovery time for high efficiency low forward voltage drop and high current capability surge overload rating to 100a peak ideally suited for automated assembly plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: solder plated terminal - solderable per mil-std-202, method 208 polarity: cathode band or cathode notch smb weight: 0.093 grams (approx.) smc weight: 0.21 grams (approx.) mounting position: any marking: type number maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. notes: 1. unit mounted on pc board with 5.0 mm 2 (0.013 mm thick) copper pads as heat sink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a. see figure 5. characteristic symbol es3a/b es3b/b es3c/b es3d/b unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 150 200 v rms reverse voltage v r(rms) 35 70 105 140 v average rectified output current @ t t = 100 c i o 3.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 100 a forward voltage @ i f = 3.0a v fm 0.9 v peak reverse current @ t a = 25 c at rated dc blocking voltage @ t a = 125 c i rm 10 500 a reverse recovery time (note 3) t rr 25 ns typical junction capacitance (note 2) c j 45 pf typical thermal resistance, junction to terminal (note 1) r jt 15 k/w operating and storage temperature range t j, t stg -65 to +150 c
d s 14003 rev. e1-2 2 of 2 es3a/b - es3d/b 0 20 40 60 1 10 100 i , peak for w ard surge current (a) fsm number of cycles at 60hz fi g . 3 sur g e current deratin g curve single half-sine-wave (jedec method) 80 100 120 1.0 10 100 0 40 80 120 i , inst ant aneous reverse current (a) r percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 125 c j t = 25 c j 1000 0 1.0 2.0 3 . 0 25 50 75 100 125 150 175 i , a verage rectified current (a) o t , terminal temperature ( c) fi g . 1 forward current deratin g curve t 50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 5 0 . ? ? fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 i , inst ant aneous for w ard current (a) f v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f t = 25 c j pulse width: 300 s
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