1/7 preliminary data november 2000 this is preliminary data new product in development or undergoing evaluation. details are subject to change without notice. stb3015l stp3015l n-channel 30v - 0.013 w - 40a d 2 pak/to-220 stripfet ? power mosfet n typical r ds (on) = 0.013 w n exceptional dv/dt capability n low gate charge a 100 o c n application oriented characterization n for through-hole version contact sales office description this power mosfet is the latest development of stmicroelectronics unique asingle feature size ? o strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters in high performance vrms n automotive environment (injection, abs, air-bag, lampdrivers, etc.) type v dss r ds(on) i d stb3015l stp3015l 30 v 30 v <0.0155 w <0.0155 w 40 a 40 a d 2 pak to-263 (suffixat4o) 1 3 1 2 3 to-220 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain-gate voltage (r gs =20k w ) 30 v v gs gate- source voltage 20 v i d drain current (continuos) at t c =25 c 40 a i d drain current (continuos) at t c = 100 c 28 a i dm ( ? ) drain current (pulsed) 160 a p tot total dissipation at t c =25 c 80 w derating factor 0.53 w/ c dv/dt (1) peak diode recovery voltage slope 7 v/ns t stg storage temperature 65 to 175 c t j max. operating junction temperature 175 c internal schematic diagram ( ? )pulse width limited by safe operating area (1)i sd [ 40 a, di/dt m 200a/ms, v dd [ v (br)dss ,tj [ t jma
stb3015l/stp3015l 2/7 thermal data avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) off on (* ) dynamic r thj-case r thj-amb r thc-sink t j thermal resistance junction-case thermal resistance junction-ambient thermal resistance junction-ambient maximum lead temperature for soldering purpose max max typ 1.88 62.5 0.5 300 c/w c/w c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 40 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =15v) 200 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m av gs =0 30 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 1 2.5 v r ds(on) static drain-source on resistance v gs =10v i d =20a v gs =5v i d =20a 0.013 0.0155 0.022 w w i d(on) on state drain current v ds >i d(on) xr ds(on)max v gs =10 v 40 a symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds >i d(on) xr ds(on)max i d =20 a 15 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitances v ds = 25v f = 1 mhz v gs = 0 2500 1200 400 pf pf pf
3/7 stb3015l/stp3015l switching on switching off source drain diode (*) pulsed: pulse duration = 300 m s, duty cycle 1.5 %. ( ? ) pulse width limit ed by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =15v i d =20a r g = 4.7 w v gs =5v (see test circuit, figure 3) 25 160 ns ns q g total gate charge v dd =24vi d =40av gs =5 v 40 nc symbol parameter test conditions min. typ. max. unit t d(voff) t f t c off-voltage rise time fall time cross-over time v clamp =24v i d =40a r g = 4.7 w v gs =5v (see test circuit, figure 5) 25 120 155 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 40 160 a a v sd (*) forward on voltage i sd =40 a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =40 a di/dt = 100 a/ m s v dd =20v t j = 150 c (see test circuit, figure 5) 50 0.9 3.5 ns nc a electrical characteristics (continued) ..
stb3015l/stp3015l 4/7 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
5/7 stb3015l/stp3015l d 2 pak mechanical data dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0? 8?
stb3015l/stp3015l 6/7 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.65 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
7/7 stb3015l/stp3015l information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2000 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a . http://w ww.st.com
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