1/10 january 2002 stp22ns25z stb22ns25z n-channel 250v - 0.13 w - 22a to-220/d 2 pak zener-protected mesh overlay ? mosfet (1) i sd 22a, di/dt 200a/ m s, v dd v (br)dss ,t j t jmax. internal schematic diagram n typical r ds (on) = 0.13 w n extremely high dv/dt capability n 100% avalanche tested description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performance. the new patented strip layout cou- pled with the company's proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications. applications n high current, high speed switching n swith mode power supplies (smps) n dc-dc converters for telecom, industrial, and lighting equipment absolute maximum ratings ( ? )pulse width limited by safe operating area type v dss r ds(on) i d stp22ns25z stb22ns25z 250 v 250 v < 0.15 w < 0.15 w 22 a 22 a symbol parameter value unit v ds drain-source voltage (v gs =0) 250 v v dgr drain-gate voltage (r gs =20k w ) 250 v v gs gate- source voltage 20 v i d drain current (continuos) at t c =25 c22a i d drain current (continuos) at t c = 100 c 13.9 a i dm ( l ) drain current (pulsed) 88 a p tot total dissipation at t c =25 c 135 w derating factor 1.07 w/ c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k w) 2500 v dv/dt (1) peak diode recovery voltage slope 5 v/ns t stg storage temperature 55 to 150 c t j max. operating junction temperature to-220 1 2 3 1 3 d 2 pak
stp22ns25z / stb22ns25z 2/10 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.93 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 22 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v,r g = 47 ohm) 350 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 250 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 10 m a v ds = max rating, t c = 125 c 100 m a i gss gate-body leakage current (v ds =0) v gs = 18v 10 m a symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v, i d =11a 0.13 0.15 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =11a 22 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 2400 pf c oss output capacitance 340 pf c rss reverse transfer capacitance 120 pf
3/10 stp22ns25z / stb22ns25z electrical characteristics (continued) switching on switching off source drain diode gate-source zener diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device's esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 125 v, i d =11a r g = 4.7 w v gs =10v (see test circuit, figure 3) 20 ns t r rise time 30 ns q g total gate charge v dd = 200v, i d =20a, v gs = 10v 108 151 nc q gs gate-source charge 11 nc q gd gate-drain charge 40 nc symbol parameter test condit ions min. typ. max. unit t d(voff) t f turn-off- delay time fall time v dd = 125v, i d =11a, r g =4.7 w, v gs = 10v (see test circuit, figure 3) 100 78 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 200v, i d =22a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 37 65 110 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 22 a i sdm (2) source-drain current (pulsed) 88 a v sd (1) forward on voltage i sd =22a,v gs =0 1.6 v t rr reverse recovery time i sd = 22 a, di/dt = 100a/ m s v dd = 50v, t j = 150 c (see test circuit, figure 5) 292 ns q rr reverse recovery charge 3065 nc i rrm reverse recovery current 21 a symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 500 m a (open drain) 20 v
stp22ns25z / stb22ns25z 4/10 transconductance static drain-source on resistance transfer characteristics output characteristics thermal impedance safe operating area
5/10 stp22ns25z / stb22ns25z normalized gate thereshold voltage vs temp. capacitance variations normalized on resistance vs temperature source-drain diode forward characteristics gate charge vs gate-source voltage
stp22ns25z / stb22ns25z 6/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/10 stp22ns25z / stb22ns25z dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stp22ns25z / stb22ns25z 8/10 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0? 8? d 2 pak mechanical data 3
9/10 stp22ns25z / stb22ns25z tape and reel shipment (suffix ot4o)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp22ns25z / stb22ns25z 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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