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1/14 automotive specific october 2002 . stp210nf02 stb210nf02 stb210nf02-1 n-channel 20v - 0.0026 w - 120a d pak/i pak/to-220 stripfet ? ii power mosfet n typical r ds (on) = 0.0026 w n standard threshold drive n 100% avalanche tested description this power mosfet is the latest development of stmicroelectronis unique osingle feature size ? o strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters type v dss r ds(on) i d stb210nf02/-1 stp210nf02 20 v 20 v <0.0032 w <0.0032 w 120 a (**) 120 a (**) 1 2 3 1 3 1 2 3 to-220 d pak to-263 i pak to-262 internal schematic diagram ordering information absolute maximum ratings ( ? ) pulse width limit ed by safe operating area. (**) current limited by package (1) i sd 120a, di/dt 250a/ m s, v dd v (br)dss ,t j t jmax (2) starting t j =25 o c, i d =60a,v dd =14v sales type marking package packaging stb210nf02 b210nf02 d 2 pak tube STB210NF02T4 b210nf02 d 2 pak tape & reel stp210nf02 p210nf02 to-220 tube stb210nf02-1 b210nf02 i 2 pak tube symbol parameter value unit v ds drain-source voltage (v gs =0) 20 v v dgr drain-gate voltage (r gs =20k w ) 20 v v gs gate- source voltage 20 v i d (**) drain current (continuous) at t c =25 c 120 a i d drain current (continuous) at t c = 100 c 120 a i dm ( ? ) drain current (pulsed) 480 a p tot total dissipation at t c =25 c 300 w derating factor 2.0 w/ c dv/dt (1) peak diode recovery voltage slope 1 v/ns e as (2) single pulse avalanche energy 2.3 j t stg storage temperature -55 to 175 c t j operating junction temperature
stb210nf02/-1 stp210nf02 2/14 thermal data electrical characteristics (t case =25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb rthj-pcb t l thermal resistance junction-case thermal resistance junction-ambient thermal resistance junction-pcb maximum lead temperature for soldering purpose (for 10 sec. 1.6 mm from case) max max max typ 0.5 62.5 see curve on page 6 300 c/w c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m av gs =0 20 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating t c = 125 c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a2 4 v r ds(on) static drain-source on resistance v gs =10v i d =50a 2.6 3.2 m w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 10 v i d =50a 130 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15v, f = 1 mhz, v gs =0 5100 3500 800 pf pf pf
3/14 stb210nf02/-1 stp210nf02 switching on switching off source drain diode (*) pulsed: pulse duration = 300 m s, duty cycle 1.5 %. ( ? ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =10v i d =60a r g = 4.7 w v gs =10v (resistive load, figure 3) 35 360 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =10v i d =120a v gs =10v 125 40 50 150 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =10v i d =60a r g = 4.7 w, v gs =10v (resistive load, figure 3) 75 110 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 120 480 a a v sd (*) forward on voltage i sd = 120 a v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a di/dt = 100a/ m s v dd =15v t j = 150 c (see test circuit, figure 5) 70 120 3.5 ns nc a electrical characteristics (continued) safe operating area thermal impedance
stb210nf02/-1 stp210nf02 4/14 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/14 stb210nf02/-1 stp210nf02 .. normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. power derating vs tc max id current vs tc
stb210nf02/-1 stp210nf02 6/14 thermal resistance rthj-a vs pcb copper area max power dissipation vs pcb copper area allowable iav vs. time in avalanche the previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: p d(ave) = 0.5 * (1.3 * bv dss *i av ) e as(ar) =p d(ave) *t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche to derate above 25 o c, at fixed i av , the following equation must be applied: i av =2*(t jmax -t case )/ (1.3 * bv dss *z th ) where: z th =k*r th is the value coming from normalized thermal response at fixed pulse width equal to t av .
7/14 stb210nf02/-1 stp210nf02 parameter node value ctherm1 5 - 4 0.011 ctherm2 4 - 3 0.0012 ctherm3 3 - 2 0.05 ctherm4 2 - 1 0.1 rtherm1 5 - 4 0.09 rtherm2 4 - 3 0.02 rtherm3 3 - 2 0.11 rtherm4 2 - 1 0.17 spice thermal model
stb210nf02/-1 stp210nf02 8/14 fig. 4.1: gate charge test waveform fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 3.1: switching time waveform fig. 4: gate charge test circuit
9/14 stb210nf02/-1 stp210nf02 fig. 5: diode switching test circuit fig. 5.1: diode recovery times waveform
stb210nf02/-1 stp210nf02 10/14 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 8 0 8 d pak mechanical data
11/14 stb210nf02/-1 stp210nf02 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
stb210nf02/-1 stp210nf02 12/14 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.40 0.645 l3 28.90 1.137 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
13/14 stb210nf02/-1 stp210nf02 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ot4o)* d 2 pak footprint tape mechanical data
stb210nf02/-1 stp210nf02 14/14 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express writt en approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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