ka band low noise amplifier 02/18/00 preliminary specifications ? subject to change kalna3s.4r page 1 0 5 10 15 20 25 30 -15 -10 -5 0 30 32 34 36 38 40 ka band lna w325 s21 s11 s22 s21-gain [db] s11 & s22 [db] ghz kalna3s.04r*** mmic features low noise 2.5 db n.f. high gain 22 db gain (min) frequency range : 33-36 ghz 50 ? ? ? ? zin / zout >10 db input / output return loss > 8 dbm output power at 1db gain compression chip size : 1.5 mm x 0.7 mm substrate thickness : 75 m bond pad dimensions 100 m x 100 m description the rockwell kalna3s.04r is a phemt low noise amplifier that operates from 33 to 36 ghz. this 3 stage amplifier has 24 db nominal gain with 2.5 db nominal noise figure and 1 db gain compression of 8 dbm output power minimum. this mmic is unconditionally stable. absolute maximum ratings symbol parameters/conditions min max units v d 1 2 3 drain supply voltage 5 volts v g 1 2 3 gate supply voltage -0.6 0.0 volts id total total drain current 80 ma ig total total gate current 0.1 ma pin rf input power 30 dbm t ch operating channel temperature 150 c t max max assembly temperature 300* c t stg max storage temperature - 65 165 c t base maximum base plate temperature 140 c * 30 minute maximum
ka band low noise amplifier 02/18/00 preliminary specifications ? subject to change kalna3s.4r page 2 rf and electrical specifications conditions t base = 25 c, z source = z load 50 +/- 5 ? ? ? ? symbol parameters/conditions min typ max units v d 1 2 3 drain supply voltage 2.5 3 5 volts v g 1 2 3 gate supply voltage -0.6 -0.2 0.0 volts id total total drain current (@ typ vgs) 20 50 80 ma frequency specified bandwidth edges 33 36 ghz gain** small signal 22 24 db ? gain small signal gain flatness <1 1.2 db/ghz p1db(note 1) power output at 1db gain compression 8 10 dbm rl in input port return loss 8 10 db rl out output port return loss 8 10 db isolation reverse isolation 30 40 db nf(note 1) noise figure 2.5 3.0 db (note 1) these measurements will be carried out on a sampled basis. a random representative sample of dies is mounted and tested for noise figure and 1 db gain compression. (***) rockwell science center reserves the right to make improvements in this device, including die size reduction, while maintaining all rf & dc specifications. the general notes on rockwell phemt products will be supplied upon user?s request . in addition to inspection criteria it will contain descriptions, biasing instructions, reliability data. each die is fully dc tested and rf s-parameters are measured. full 2-port s-parameter data on individual die will be supplied. all dies will pass visual inspection as dictated by the rules contained in section a of the general notes on rockwell phemt products (applicable sections of mil-i-45208) every die has a unique identifier number on-chip for complete traceability. a conductive epoxy or a flux-less solder die attach is recommended. the die should be attached to an electrically conductive surface to complete dc and rf ground paths. the ground path inductance should be minimized (<10 ph) to assure stability. the front side metal is compatible with thermo-sonic 1 mil wire bonding. the backside metal is compatible with die attach methods not exceeding tmax . gaas mmics are esd sensitive. proper precautions should be used when handling these devices. front and backside metal is gold.
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