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d a t a sh eet product speci?cation supersedes data of 1997 sep 05 1999 may 17 discrete semiconductors bf904; bf904r n-channel dual gate mos-fets
1999 may 17 2 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r features specially designed for use at 5 v supply voltage short channel transistor with high transfer admittance to input capacitance ratio low noise gain controlled amplifier up to 1 ghz superior cross-modulation performance during agc. applications vhf and uhf applications with 3 to 7 v supply voltage such as television tuners and professional communications equipment. description enhancement type field-effect transistor in a plastic microminiature sot143b and sot143r package. the transistor consists of an amplifier mos-fet with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during agc. pinning caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a and snw-fq-302b. pin symbol description 1 s, b source 2 d drain 3g 2 gate 2 4g 1 gate 1 fig.1 simplified outline (sot143b) and symbol. bf904 marking code: m04. handbook, halfpage 43 2 1 top view mam124 s,b d g 1 g 2 fig.2 simplified outline (sot143r) and symbol. bf904r marking code: m06. handbook, halfpage top view mam125 - 1 s,b d g 1 g 2 34 1 2 quick reference data symbol parameter conditions min. typ. max. unit v ds drain-source voltage -- 7v i d drain current -- 30 ma p tot total power dissipation -- 200 mw t j operating junction temperature -- 150 c ? y fs ? forward transfer admittance 22 25 30 ms c ig1-s input capacitance at gate 1 - 2.2 2.6 pf c rs reverse transfer capacitance f = 1 mhz - 25 35 ff f noise ?gure f = 800 mhz - 2 - db
1999 may 17 3 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r limiting values in accordance with the absolute maximum rating system (iec 134). note 1. device mounted on a printed-circuit board. symbol parameter conditions min. max. unit v ds drain-source voltage - 7v i d drain current - 30 ma i g1 gate 1 current - 10 ma i g2 gate 2 current - 10 ma p tot total power dissipation see fig.3 bf904 t amb 50 c; note 1 - 200 mw bf904r t amb 40 c; note 1 - 200 mw t stg storage temperature - 65 +150 c t j operating junction temperature - 150 c fig.3 power derating curves. handbook, halfpage 0 50 100 150 200 250 0 50 100 150 200 p tot (mw) mra770 t amb ( c) o bf904 bf904r
1999 may 17 4 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r thermal characteristics notes 1. device mounted on a printed-circuit board. 2. t s is the temperature at the soldering point of the source lead. static characteristics t j =25 c unless otherwise speci?ed. note 1. r g1 connects gate 1 to v gg = 5 v; see fig.20. dynamic characteristics common source; t amb =25 c; v ds = 5 v; v g2-s = 4 v; i d = 10 ma; unless otherwise specified. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 bf904 500 k/w bf904r 550 k/w r th j-s thermal resistance from junction to soldering point note 2 bf904 t s =92 c 290 k/w bf904r t s =78 c 360 k/w symbol parameter conditions min. max. unit v (br)g1-ss gate 1-source breakdown voltage v g2-s =v ds = 0; i g1-s = 10 ma 6 15 v v (br)g2-ss gate 2-source breakdown voltage v g1-s =v ds = 0; i g2-s = 10 ma 6 15 v v (f)s-g1 forward source-gate 1 voltage v g2-s =v ds = 0; i s-g1 = 10 ma 0.5 1.5 v v (f)s-g2 forward source-gate 2 voltage v g1-s =v ds = 0; i s-g2 = 10 ma 0.5 1.5 v v g1-s(th) gate 1-source threshold voltage v g2-s =4v; v ds =5v; i d =20 m a 0.3 1 v v g2-s(th) gate 2-source threshold voltage v g1-s =v ds =5v; i d =20 m a 0.3 1.2 v i dsx drain-source current v g2-s =4v; v ds =5v; r g1 = 120 k w ; note 1 813ma i g1-ss gate 1 cut-off current v g2-s =v ds = 0; v g1-s =5v - 50 na i g2-ss gate 2 cut-off current v g1-s =v ds = 0; v g2-s =5v - 50 na symbol parameter conditions min. typ. max. unit ? y fs ? forward transfer admittance pulsed; t j =25 c 222530ms c ig1-s input capacitance at gate 1 f = 1 mhz - 2.2 2.6 pf c ig2-s input capacitance at gate 2 f = 1 mhz 1 1.5 2 pf c os drain-source capacitance f = 1 mhz 1 1.3 1.6 pf c rs reverse transfer capacitance f = 1 mhz - 25 35 ff f noise ?gure f = 200 mhz; g s = 2 ms; b s =b sopt - 1 1.5 db f = 800 mhz; g s =g sopt ; b s =b sopt - 2 2.8 db
1999 may 17 5 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r fig.4 transfer admittance as a function of the junction temperature; typical values. 50 0 50 150 30 0 mld268 100 t ( c) o j y fs (ms) 40 20 10 fig.5 typical gain reduction as a function of the agc voltage. f = 50 mhz. handbook, halfpage 0 10 20 30 40 50 01234 v (v) agc gain reduction (db) mra769 fig.6 unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see fig.20. v ds = 5 v; v gg = 5 v; f w = 50 mhz. f unw = 60 mhz; t amb =25 c; r g1 = 120 k w. handbook, halfpage 80 90 100 110 120 0 1020304050 v unw (db v) gain reduction (db) mra771 m fig.7 transfer characteristics; typical values. v ds =5v. t j =25 c. 0 20 10 15 5 0 0.4 2.0 mld270 0.8 1.2 1.6 i d (ma) v (v) g1 s 2 v 1.5 v 1 v v = 4 v 3 v 2.5 v g2 s
1999 may 17 6 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r fig.8 output characteristics; typical values. v g2-s =4v. t j =25 c. handbook, halfpage 0 20 8 12 16 4 0 210 mld269 468 i d (ma) v (v) ds 1.3 v 1.2 v 1.1 v 1.0 v 0.9 v v = 1.4 v g1 s fig.9 gate 1 current as a function of gate 1 voltage; typical values. v ds =5v. t j =25 c. handbook, halfpage 0 150 100 50 0 0.5 2.5 mld271 1.0 1.5 2.0 i g1 ( m a) v (v) g1 s 3.5 v 2.5 v 2 v 3 v v = 4 v g2 s fig.10 forward transfer admittance as a function of drain current; typical values. v ds =5v. t j =25 c. handbook, halfpage 0 40 30 20 10 0 4 8 12 16 20 mld272 y fs (ms) i (ma) d 3 v 2.5 v 2 v v = 4 v g2 s 3.5 v fig.11 drain current as a function of gate 1 current; typical values. v ds =5v. v g2-s =4v. t j =25 c. handbook, halfpage 0 16 8 12 4 0 10 50 mld273 20 30 40 i d (ma) i ( m a) g1
1999 may 17 7 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r fig.12 drain current as a function of gate 1 supply voltage (= v gg ); typical values; see fig.20. v ds = 5 v; v g2-s =4v. r g1 = 120 k w (connected to v gg ); t j =25 c. handbook, halfpage 0 12 8 4 0 15 mld275 234 i d (ma) v (v) gg fig.13 drain current as a function of gate 1 (= v gg ) and drain supply voltage; typical values; see fig.20. v g2-s =4v. r g1 connected to v gg ; t j =25 c. handbook, halfpage 0 20 10 15 5 0 24 8 mld274 6 v = v (v) gg ds i d (ma) r = 47 k w g1 68 k w 82 k w 100 k w 120 k w 150 k w 180 k w 220 k w v ds = 5 v; t j =25 c. r g1 = 120 k w (connected to v gg ). fig.14 drain current as a function of gate 2 voltage; typical values; see fig.20. handbook, halfpage 0246 12 0 mld276 8 4 i d (ma) 4.5 v 4 v 3.5 v 3 v v (v) g2 s v = 5 v gg fig.15 gate 1 current as a function of gate 2 voltage; typical values; see fig.20. v ds = 5 v; t j =25 c. r g1 = 120 k w (connected to v gg ). handbook, halfpage 0246 40 30 10 0 20 mlb945 i g1 ( m a) v (v) g2 s 4.5 v 4 v 3.5 v 3 v v = 5 v gg
1999 may 17 8 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r fig.16 input admittance as a function of frequency; typical values. v ds = 5 v; v g2 =4v. i d = 15 ma; t amb =25 c. handbook, halfpage 10 3 mld277 10 2 10 10 1 10 2 10 1 y is (ms) f (mhz) b is g is fig.17 reverse transfer admittance and phase as a function of frequency; typical values. v ds = 5 v; v g2 =4v. i d = 15 ma; t amb =25 c. 10 3 mld278 10 2 10 10 3 10 2 10 1 y rs 10 3 10 10 1 2 rs ( m s) f (mhz) rs y rs (deg) j j fig.18 forward transfer admittance and phase as a function of frequency; typical values. v ds = 5 v; v g2 =4v. i d = 15 ma; t amb =25 c. 10 3 mld279 10 2 10 1 10 2 10 1 10 10 2 y fs (ms) y fs f (mhz) fs fs (deg) j j fig.19 output admittance as a function of frequency; typical values. v ds = 5 v; v g2 =4v. i d = 15 ma; t amb =25 c. handbook, halfpage 10 3 mld280 10 2 10 10 1 10 1 10 2 y os (ms) f (mhz) b os g os
1999 may 17 9 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r fig.20 cross-modulation test set-up. dut v agc c1 4.7 nf r1 10 k w mld171 c4 4.7 nf l1 450 nh c3 12 pf r l 50 w ? v gg v ds r gen 50 v i r2 50 4.7 nf c2 r g1 w w
1999 may 17 10 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r table 1 scattering parameters: v ds =5 v; v g2-s = 4 v; i d =10ma table 2 noise data: v ds = 5 v; v g2-s = 4 v; i d =10ma f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.989 - 3.4 2.420 175.7 0.000 79.9 0.993 - 1.6 100 0.985 - 8.3 2.414 169.1 0.001 78.3 0.992 - 3.9 200 0.976 - 16.4 2.368 158.8 0.003 80.3 0.987 - 7.8 300 0.958 - 24.1 2.301 148.5 0.004 73.7 0.980 - 11.4 400 0.942 - 32.0 2.251 138.8 0.005 70.7 0.974 - 15.2 500 0.918 - 39.3 2.170 129.5 0.005 67.2 0.966 - 18.7 600 0.899 - 46.0 2.080 120.7 0.005 67.8 0.958 - 22.2 700 0.876 - 52.6 2.001 112.1 0.005 68.6 0.951 - 25.5 800 0.852 - 58.8 1.924 103.2 0.005 72.9 0.944 - 28.9 900 0.823 - 64.9 1.829 94.7 0.005 78.7 0.937 - 32.1 1000 0.800 - 70.9 1.747 86.5 0.005 88.3 0.933 - 35.2 1200 0.750 - 82.4 1.621 70.7 0.005 120.5 0.928 - 41.7 1400 0.719 - 92.7 1.535 54.6 0.008 139.8 0.930 - 48.4 1600 0.682 - 102.5 1.424 39.4 0.010 137.8 0.924 - 54.9 1800 0.642 - 109.8 1.349 22.5 0.013 156.8 0.928 - 62.9 2000 0.602 - 116.5 1.283 1.1 0.018 175.1 0.928 - 73.1 2200 0.547 - 124.9 1.130 - 15.1 0.014 172.6 0.887 - 81.0 2400 0.596 - 128.7 1.018 - 49.1 0.040 - 163.9 0.837 - 95.8 2600 0.682 - 132.6 0.979 - 79.4 0.077 - 164.0 0.778 - 109.6 2800 0.771 - 142.5 0.804 - 116.2 0.120 178.8 0.629 - 119.5 3000 0.793 - 157.5 0.541 - 153.5 0.149 158.3 0.479 - 119.9 f (mhz) f min (db) g opt r n (ratio) (deg) 800 2.00 0.686 49.6 50.40
1999 may 17 11 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r package outlines unit a references outline version european projection issue date iec jedec eiaj mm 1.1 0.9 a 1 max 0.1 b 1 0.88 0.78 c 0.15 0.09 d 3.0 2.8 e 1.4 1.2 h e y w v q 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 e 1 1.7 l p 0.1 0.1 0.2 b p 0.48 0.38 dimensions (mm are the original dimensions) sot143b 97-02-28 0 1 2 mm scale plastic surface mounted package; 4 leads sot143b d h e e a b v m a x a a 1 l p q detail x c y w m e 1 e b 2 1 3 4 b 1 b p
1999 may 17 12 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r unit a references outline version european projection issue date iec jedec eiaj mm 1.1 0.9 a 1 max 0.1 b 1 0.88 0.78 c 0.15 0.09 d 3.0 2.8 e 1.4 1.2 h e y w v q 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 e 1 1.7 l p 0.1 0.1 0.2 b p 0.48 0.38 dimensions (mm are the original dimensions) sot143r 97-03-10 0 1 2 mm scale plastic surface mounted package; reverse pinning; 4 leads sot143r d h e e a b v m a x a a 1 l p q detail x c y w m e 1 e b 1 2 4 3 b 1 b p
1999 may 17 13 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 may 17 14 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r notes
1999 may 17 15 philips semiconductors product speci?cation n-channel dual gate mos-fets bf904; bf904r notes
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philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy printed in the netherlands 125004/00/05/pp16 date of release: 1999 may 17 document order number: 9397 750 05898

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