? semiconductor components industries, llc, 2001 november, 2001 rev. 6 publication order number: bat54alt1/d 1 bat54alt1 preferred device schottky barrier diodes these schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. extremely low forward voltage reduces conduction loss. miniature surface mount package is excellent for hand held and portable applications where space is limited. ? extremely fast switching speed ? low forward voltage 0.35 volts (typ) @ i f = 10 madc maximum ratings (t j = 125 c unless otherwise noted) rating symbol value unit reverse voltage v r 30 volts forward power dissipation @ t a = 25 c derate above 25 c p f 225 1.8 mw mw/ c forward current (dc) i f 200 max ma junction temperature t j 125 max c storage temperature range t stg 55 to +150 c 30 volts schottky barrier detector and switching diodes device package shipping ordering information bat54alt1 sot23 3000/tape & reel http://onsemi.com (to236ab) sot23 case 318 style 12 preferred devices are recommended choices for future use and best overall value. marking diagram 3 12 b6 anode 3 cathode 1 2 cathode 1 2 3
bat54alt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 m a) v (br)r 30 volts total capacitance (v r = 1.0 v, f = 1.0 mhz) c t 7.6 10 pf reverse leakage (v r = 25 v) i r 0.5 2.0 m adc forward voltage (i f = 0.1 madc) v f 0.22 0.24 vdc forward voltage (i f = 30 madc) v f 0.41 0.5 vdc forward voltage (i f = 100 madc) v f 0.52 0.8 vdc reverse recovery time (i f = i r = 10 madc, i r(rec) = 1.0 madc, figure 1) t rr 5.0 ns forward voltage (i f = 1.0 madc) v f 0.29 0.32 vdc forward voltage (i f = 10 madc) v f 0.35 0.40 vdc forward current (dc) i f 200 madc repetitive peak forward current i frm 300 madc nonrepetitive peak forward current (t < 1.0 s) i fsm 600 madc
bat54alt1 http://onsemi.com 3 c t , toatal capacitance (pf) notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2 k 820 w 0.1 m f dut v r 100 m h 0.1 m f 50 w output pulse generator 50 w input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1 ma) i f input signal figure 1. recovery time equivalent test circuit 100 0.0 0.1 v f , forward voltage (volts) 0.2 0.3 0.4 0.5 10 1.0 0.1 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 510 15 20 25 14 0 v r , reverse voltage (volts) 12 4 2 0 51015 30 figure 2. forward voltage figure 3. leakage current figure 4. total capacitance 40 c 25 c t a = 150 c t a = 125 c t a = 85 c t a = 25 c 0.6 55 c 150 c 125 c 100 1000 30 25 20 6 8 10 i r , reverse current ( m a) i f , forward current (ma)
bat54alt1 http://onsemi.com 4 the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation p d = t j(max) t a r q ja p d = 150 c 25 c 556 c/w = 225 milliwatts the power dissipation of the sot23 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipa- tion. power dissipation for a surface mount device is deter- mined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milli- watts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. there- fore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause exces- sive thermal shock and stress which can result in damage to the device.
bat54alt1 http://onsemi.com 5 package dimensions style 12: pin 1. cathode 2. cathode 3. anode d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. (to236ab) sot23 plastic package case 31808 issue ae
bat54alt1 http://onsemi.com 6 notes
bat54alt1 http://onsemi.com 7 notes
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