STD2NB80-1 n - channel 800v - 4.6 w - 1.9a - ipak powermesh ? mosfet preliminary data n typical r ds(on) = 4.6 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized n for smd dpak version contact sales office description using the latest high voltage mesh overlay ? process, sgs-thomson has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprietary edge termination structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ? internal schematic diagram june 1998 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs = 20 k w ) 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 1.9 a i d drain current (continuous) at t c = 100 o c 1.2 a i dm ( ) drain current (pulsed) 7.6 a p tot total dissipation at t c = 25 o c50w derating factor 0.4 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4.5 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 2 a, di/dt 100 a/ m s, v dd v (br)dss , tj t jmax type v dss r ds(on) i d STD2NB80-1 800v < 6.5 w 1.9 a 3 2 1 ipak to-251 (suffix "-1") 1/5
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 2.5 100 1 275 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1.9 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 176 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 1.3 a 4.6 6.5 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 1.9 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 1.3 a 1 2 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 440 60 7 575 78 9 pf pf pf STD2NB80-1 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 400 v i d = 1.5 a r g = 4.7 w v gs = 10 v 12 10 17 14 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v i d = 3 a v gs = 10 v 17 6.5 7.5 24 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 640 v i d = 3 a r g = 4.7 w v gs = 10 v 15 17 22 21 24 31 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 1.9 7.6 a a v sd ( * ) forward on voltage i sd =1.9 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =2.6 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 650 2.8 8.5 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STD2NB80-1 3/5
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e STD2NB80-1 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a. . STD2NB80-1 5/5
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