vishay siliconix SI5475BDC new product document number: 73381 s-60384?rev. b, 13-mar-06 www.vishay.com 1 p-channel 12-v (d-s) mosfet features ?trenchfet ? power mosfet: 1.8-v rated product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) - 12 0.028 at v gs = - 4.5 v - 6 15.5 nc 0.039 at v gs = - 2.5v - 6 0.054 at v gs = - 1.8 v - 6 notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 sec. d. see solder profile ( http://www.vishay.com/doc?73257 ). the 1206 chipfet is a l eadless package. the end of t he lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual solderin g with a soldering iron is not recommended for leadless components. f. maximum under steady stat e conditions is 95 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 12 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 6 a a t c = 70 c - 6 a t a = 25 c - 7.7 b,c t a = 70 c - 6.2 b,c pulsed drain current i dm - 20 continuous source-drain diode current t c = 25 c i s - 5.2 t a = 25 c - 1.3 b,c maximum power dissipation t c = 25 c p d 6.3 w t c = 70 c 4 t a = 25 c 2.5 b,c t a = 70 c 1.6 b,c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d,e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 sec r thja 40 50 c/w maximum junction-to-foot (drain) steady state r thjf 15 20 marking code b n xxx lot tracea b ility and date code part # code ordering information: SI5475BDC-t1?e3 (lead (p b )?free) s g d p-channel mosfet 1206-8 chipfet d d d g d d d s 1 bottom v ie w rohs compliant
www.vishay.com 2 document number: 73381 s-60384?rev. b, 13-mar-06 vishay siliconix SI5475BDC new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test condition min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 12 v v ds temperature coefficient v ds /t j i d = - 250 a - 7 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 - 1.0 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 ns zero gate voltage drain current i dss v ds = - 12 v, v gs = 0 v - 1 a v ds = - 12 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 4.5 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 5.6 a 0.023 0.028 v gs = - 2.5 v, i d = - 4.7 a 0.032 0.039 v gs = - 1.8 v, i d = - 1.9 a 0.044 0.054 forward transconductance a g fs v ds = - 6 v, i d = - 6.9 a 22 s dynamic b input capacitance c iss v ds = - 6 v, v gs = 0 v, f = 1 mhz 1400 pf output capacitance c oss 370 reverse transfer capacitance c rss 260 total gate charge q g v ds = - 6 v, v gs = - 8 v, i d = - 6 a 26 40 nc v ds = - 6 v, v gs = - 4.5 v, i d = - 6 a 15.5 24 gate-source charge q gs 2.1 gate-drain charge q gd 4.0 gate resistance r g f = 1 mhz 9 tu r n - o n d e l ay t i m e t d(on) v dd = - 6 v, r l = 0.97 i d ? - 6.2 a, v gen = - 4.5 v, r g = 1 10 15 ns rise time t r 38 60 turn-off delaytime t d(off) 62 95 fall time t f 70 105 tu r n - o n d e l ay t i m e t d(on) v dd = - 6 v, r l = 0.97 i d ? - 6.2 a, v gen = - 8 v, r g = 1 510 rise time t r 15 25 turn-off delaytime t d(off) 65 100 fall time t f 72 110 drain-source body diode characteristics continous source-drain diode current i s t c = 25 c - 5.2 a pulse diode forward current i sm - 20 body diode voltage v sd i s = - 6.2 a, v gs = 0 v - 0.9 - 1.2 v body diode reverse recovery time t rr i f = - 6.2 a, di/dt = 100 a/s, t j = 25 c 45 70 ns body diode reverse recovery charge q rr 27 42 nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 30
document number: 73381 s-60384?rev. b, 13-mar-06 www.vishay.com 3 vishay siliconix SI5475BDC new product typical characteristics 25 c unless noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thr u 2 v 1.5 v v ds ? drain-to-so u rce v oltage ( v ) ?) a ( t n e r r u c n i a r d i d 1 v 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 04 8 12 16 20 v gs = 2.5 v i d ? drain c u rrent (a) v gs = 4.5 v r ) n o ( s d ? m ( e c n a t s i s e r - n o ) v gs = 1. 8 v 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 i d = 7.7 a ?) v ( e g a t l o v e c r u o s - o t - e t a g q g ? total gate charge (nc) v s g v ds = 6 v v ds = 8 .4 v transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.4 0. 8 1.2 1.6 2.0 25 c t c = 125 c - 55 c v gs ? gate-to-so u rce v oltage ( v ) ?) a ( t n e r r u c n i a r d i d 0 300 600 900 1200 1500 1 8 00 2100 0246 8 10 12 c rss c oss c iss v ds ? drain-to-so u rce v oltage ( v ) c? ) f p ( e c n a t i c a p a c 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5, 2.5, 1. 8 v i d = 7.7 a t j ? j u nction temperat u re ( c) r ) n o ( s d ? sistance e r - n o ) d e z i l a m r o n (
www.vishay.com 4 document number: 73381 s-60384?rev. b, 13-mar-06 vishay siliconix SI5475BDC new product typical characteristics 25 c unless noted source-drain diode forward voltage threshold voltage 1.0 1.4 1 10 20 0.0 0.2 0.4 0.6 0. 8 t j = 25 c t j = 150 c v sd ? so u rce-to-drain v oltage ( v ) ?) a ( t n e r r u c e c r u o s i s 1.2 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j ? temperat u re (c) v ) h t ( s g ) v ( on-resistance vs. gate-to-source temperature single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 012345 i d = 5.6 a v gs ? gate-to-so u rce v oltage ( v ) r ) n o ( s d ?m ( e c n a t s i s e r - n o e c r u o s - o t - n i a r d ) t a = 25 c t a = 125 c 0 40 50 10 20 ) w ( r e w o p time (sec) 1600 0.1 0.01 0.001 10 100 30 safe operating area, junction-to-ambient 100 1 0.1 1 100 0.01 10 ?) a ( t n e r r u c n i a r d i d 0.1 1 ms t a = 25 c single p u lse 10 ms 100 ms dc v ds ? drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 s 10 s *limited b y r ds(on) 10
vishay semiconductors SI5475BDC document number: 73381 s-60384?rev. b, 13-mar-06 www.vishay.com 5 typical characteristics 25 c unless noted * the power dissipation pd is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limi t. current derating* 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 package limited i d ?) a ( t n e r r u c n i a r d t c ? case temperat u re (c) power derating 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 c ? case temperat u re (c) ) w ( n o i t a p i s s i d r e w o p t
www.vishay.com 6 document number: 73381 s-60384?rev. b, 13-mar-06 vishay siliconix SI5475BDC typical characteristics 25 c unless noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73381. normalized thermal transient impedance, junction-to-ambient 10 ?3 10 ?2 110 600 10 ?1 10 ?4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (sec) i t c e f f e d e z i l a m r o n t n e i s n a r t e v e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 8 0 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-case 10 ?3 10 ?2 10 10 ?1 10 ?4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (sec) v i t c e f f e d e z i l a m r o n t n e i s n a r t e e c n a d e p m i l a m r e h t single p u lse 1
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