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| savantic semiconductor product specification silicon npn power transistors MJH10012 d escription with to-3pn package high voltage,high current darlington applications automotive ignition switching regulator motor control applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter abolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 8 v i c collector current 10 a i cp collector current-peak 15 a i b base current 2 a p c collector power dissipation t c =25 118 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 0.95 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors MJH10012 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =3a; i b =0.6a 1.5 v v cesat-2 collector-emitter saturation voltage i c =6a; i b =0.6a 2.0 v v cesat-3 collector-emitter saturation voltage i c =10a; i b =2a 2.5 v v besat-1 base-emitter saturation voltage i c =6a; i b =0.6a 2.5 v v besat-2 base-emitter saturation voltage i c =10a; i b =2a 3.0 v v be base-emitter on voltage i c =10a ; v ce =6v 2.8 v i cbo collector cut-off current v cb =600v; i e =0 1 ma i ceo collector cut-off current v ce =400v; i b =0 1 ma i ebo emitter cut-off current v eb =6v; i c =0 40 ma h fe-1 dc current gain i c =3a ; v ce =6v 300 h fe-2 dc current gain i c =6a ; v ce =6v 100 2000 h fe-3 dc current gain i c =10a ; v ce =6v 20 v f diode forward voltage i f =10a 3.5 v t s storage time 15 s t f fall time i c =6.0a ; v cc =12v i b1 =i b2 =0.3a 15 s savantic semiconductor product specification 3 silicon npn power transistors MJH10012 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) savantic semiconductor product specification 4 silicon npn power transistors MJH10012 |
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