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| inchange semiconductor isc product specification isc silicon npn power transistor 2sD5011 description high breakdown voltage- : v cbo = 1500v (min) high switching speed high reliability built-in damper diode applications designed for color tv horiz ontal output applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current- continuous 3.5 a i cm collector current-peak 10 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistor 2sD5011 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 0.8a 8.0 v v be (sat) base-emitter saturation voltage i c = 2.5a; i b = 0.8a 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 10 a i ebo emitter cutoff current v eb = 4v ; i c = 0 40 130 ma h fe dc current gain i c = 0.5a; v ce = 5v 8 v ecf c-e diode forward voltage i f = 3.5a 2.0 v f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 3 mhz t f fall time i c = 3a, i b1 = 0.8a; i b2 = -1.6a r l = 66.7 ;v cc = 200v 0.4 s isc website www.iscsemi.cn 2 www.datasheet.co.kr datasheet pdf - http://www..net/ |
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