UG8AT thru ug8dt ultrafast efficient plastic rectifier reverse voltage - 50 to 200 volts forward current - 8.0 amperes features plastic package has underwriters laboratories flammability classification 94v-0 ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode ultrafast reverse recovery time for high efficiency soft recovery characteristics excellent high temperature switching glass passivated chip junction high temperature soldering guaranteed: 250c, 0.16 (4.06) from case for 10 seconds mechanical data case: jedec to-220ac molded plastic body over passivated chip terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5in. - lbs. max. weight: 0.064 ounce, 1.81 grams maximum ratings and characteristics ratings at 25c ambient temperature unless otherwise specified. symbols UG8AT ug8bt ug8ct ug8dt units maximum repetitive peak reverse voltage v rrm 50 100 150 200 volts maximum rms voltage v rms 35 70 105 140 volts maximum dc blocking voltage v dc 50 100 150 200 volts maximum average forward rectified current at t c =100c i (av) 8.0 amps peak forward surge current 8.3 ms single half sine-wave superimposed i fsm 150.0 amps on rated load (jedec method) at t c =100c maximum instantaneous forward voltage at 8.0 1.00 20a v f 1.20 volts 5.0a, t j =150c 0.95 maximum dc reverse current t a =25c 10.0 at rated dc blocking voltage t a =100c i r 300.0 m a maximum reverse recovery time (note 1) t rr 20.0 ns maximum reverse recovery time t j =25c 30.0 (note 2) t j =100c t rr 50.0 ns maximum recovered stored charge t j =25c 20.0 (note 2) t j =100c q rr 45.0 nc typical junction capacitance (note 3) c j 45.0 pf typical thermal resistance (note 4) r q jc 4.0 c/w operating junction and storage temperature range t j , t stg -55 to+150 c notes: (1) reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a (2) t rr and q rr measured at i f =8.0a, v r =30v, di/dt=50a/ m s, i rr =10% i rm for meaurement of t rr (3) measured at 1.0 mh z and applied reverse voltage of 4.0 volts (4) thermal resistance from junction to case 10/23/98 0.154 (3.91) 0.148 (3.74) dia. 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.410 (10.41) 0.390 (9.91) 0.635 (16.13) 0.625 (15.87) 0.560 (14.22) 0.530 (13.46) pin pin 1 pin 2 case 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) t o-220a c dimensions in inches and (millimeters)
ratings and characteristic curves UG8AT thru ug8dt 0 25 50 75 100 125 150 175 0 2.0 4.0 6.0 8.0 10 12 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 1 10 100 10 100 1,000 0 20 40 60 80 100 0.01 0.1 1 10 100 1,000 0.01 0.1 1 10 100 0.1 1 10 100 fig. 1 - forward current derating curve case temperature, c average forward rectified current, amperes fig. 2 - maximum non-repetitive peak forward surge current number of cycles at 60 hz peak forward surge current, amperes fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics instantaneous forward current, amperes instantaneous reverse leakage current, microamperes instantaneous forward voltage, volts percent of rated peak reverse voltage, % fig. 5 - reverse switching characteristics recovered stored charge/reverse recovery time nc/ns junction temperature, c fig. 6 - typical junction capacitance junction capacitance, pf reverse voltage, volts t c =100 c 8.3ms single half sine-wave (jedec method) t j =100c t j =25c t j =25c pulse width=300 m s 1% duty cycle t j =25c f=1.0 mh z vsig=50mvp-p di/dt= 20a/ m s di/dt= 150a/ m s di/dt= 100a/ m s di/dt= 50a/ m s di/dt= 150a/ m s di/dt=20a/ m s di/dt=50a/ m s di/dt=100a/ m s t j =125c i f =4.0a v r =30v t rr q rr resistive or inductive load
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