1 power transistors 2SC5428 silicon npn triple diffusion mesa type for horizontal deflection output n features l high breakdown voltage, and high reliability through the use of a glass passivation layer l high-speed switching l wide area of safe operation (aso) n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current base current collector power dissipation junction temperature storage temperature symbol v cbo v ces v ceo v ebo i cp i c i b p c t j t stg ratings 1500 1500 600 5 30 25 10 100 3.5 150 C55 to +150 unit v v v v a a a w ?c ?c t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency storage time symbol i cbo i ebo h fe v ce(sat) v be(sat) f t t stg conditions v cb = 1000v, i e = 0 v cb = 1500v, i e = 0 v eb = 5v, i c = 0 v ce = 5v, i c = 12a i c = 12a, i b = 3a i c = 12a, i b = 3a v ce = 10v, i c = 0.1a, f = 0.5mhz i c = 12a, i b1 = 2.4a, i b2 = C4.8a min 7 typ 3 max 50 1 50 14 3 1.5 4.0 unit m a ma m a v v mhz m s unit: mm 1:base 2:collector 3:emitter topC3e full pack package 15.5 0.5 26.5 0.5 22.0 0.5 23.4 18.6 0.5 3.3 0.3 5.5 0.3 2.0 0.7 0.1 2.0 2.0 1.2 10.0 3.0 0.3 f 3.2 0.1 4.5 5.45 0.3 123 5.45 0.3 1.1 0.1 2.0 0.2 4.0 5 5 5 5 5 5 0.7 0.1
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