c-477 IRGPH30MD2 short circuit rated fast copack igbt insulated gate bipolar transistor with ultrafast soft recovery diode features ? short circuit rated -10s @125c, v ge = 15v ? switching-loss rating includes all "tail" losses ? hexfred tm soft ultrafast diodes ? optimized for medium operating frequency ( 1 to 10khz) e g n - c h a n n e l c v ces = 1200v v ce(sat) 3.5v @v ge = 15v, i c = 9.0a description co-packaged igbts are a natural extension of international rectifier's well known igbt line. they provide the convenience of an igbt and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. these new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. thermal resistance parameter min. typ. max. units r q jc junction-to-case - igbt ? ? 1.2 r q jc junction-to-case - diode ? ? 2.5 c/w r q cs case-to-sink, flat, greased surface ? 0.24 ? r q ja junction-to-ambient, typical socket mount ? ? 40 wt weight ? 6 (0.21) ? g (oz) preliminary data sheet pd - 9.1115 t o - 2 4 7 a c parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 15 i c @ t c = 100c continuous collector current 9.0 i cm pulsed collector current 30 a i lm clamped inductive load current 30 i f @ t c = 100c diode continuous forward current 6.0 i fm diode maximum forward current 30 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) absolute maximum ratings revision 2
c-478 IRGPH30MD2 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage ? ? ? v/c v ge = 0v , i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 3.1 3.5 i c = 9.0a v ge = 15v ? 4.9 ? v i c = 15a ? 3.6 ? i c = 9.0a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ? -14 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 2.5 ? ? s v ce = 100v, i c = 9.0a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 1200v ? ? 2500 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop ? 2.7 3.0 v i c = 6.0a ? 2.4 2.7 i c = 6.0a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 25 30 i c = 9.0a q ge gate - emitter charge (turn-on) ? ? 6.0 nc v cc = 960v q gc gate - collector charge (turn-on) ? ? 15 t d(on) turn-on delay time ? 2.3 ? t j = 25c t r rise time ? 10 ? ns i c = 9.0a, v cc = 960v t d(off) turn-off delay time ? 200 450 v ge = 15v, r g = 23 w t f fall time ? 210 390 energy losses include "tail" and e on turn-on switching loss ? ? ? diode reverse recovery. e off turn-off switching loss ? ? ? mj e ts total switching loss ? 4.0 7.0 t sc short circuit withstand time 10 ? ? s v cc = 720v, t j = 125c v ge = 15v, r g = 23 w , v cpk < 1000v t d(on) turn-on delay time ? 33 ? t j = 150c, t r rise time ? 20 ? ns i c = 9.0a, v cc = 960v t d(off) turn-off delay time ? 480 ? v ge = 15v, r g = 23 w t f fall time ? 450 ? energy losses include "tail" and e ts total switching loss ? 8.0 ? mj diode reverse recovery. l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 670 ? v ge = 0v c oes output capacitance ? 50 ? pf v cc = 30v c res reverse transfer capacitance ? 10 ? ? = 1.0mhz t rr diode reverse recovery time ? 53 80 ns t j = 25c ? 87 130 t j = 125c i f = 6.0a i rr diode peak reverse recovery current ? 4.4 8.0 a t j = 25c ? 5.0 9.0 t j = 125c v r = 200v q rr diode reverse recovery charge ? 116 320 nc t j = 25c ? 233 585 t j = 125c di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 180 ? a/s t j = 25c during t b ? 100 ? t j = 125c v cc =80%(v ces ), v ge =20v, l=10h, r g = 23 w pulse width 5.0s, single shot. pulse width 80s; duty factor 0.1%. notes: repetitive rating; v ge =20v, pulse width limited by max. junction temperature. refer to section d - page d-13 for package outline 3 - jedec outline to-247ac
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