6 C 20 ghz high-gain amplifier technical data features ? wide-frequency range: 6 C 20 ghz ? high gain: 17 db ? gain flatness: 1.0 db ? return loss: input -15 db output -15 db ? single bias supply operation ? low dc power dissipation: p dc ~ 0.5 watts ? medium power: 20 ghz: p -1db : 12 dbm p sat : 13 dbm description the HMMC-5620 is a wideband gaas mmic amplifier designed for medium output power and high gain over the 6 to 20 ghz frequency range. four mesfet cascade stages provide high gain, while the single bias supply offers ease of use. e-beam lithography is used to produce gate lengths of ? 0.3 m m. the HMMC-5620 incor- porates advanced mbe technol- ogy, ti-pt-au gate metallization, silicon nitride passivation, and polyimide for scratch protection. absolute maximum ratings [1] symbol parameters/conditions units min. max. v dd positive drain voltage v 7.5 i dd total drain current ma 135 p dc dc power dissipation watts 1.0 p in cw input power dbm 20 t ch operating channel temp. c +160 t case operating case temp. c -55 t stg storage temperature c -65 +165 t max maximum assembly temp. c +300 (for 60 seconds maximum) notes: 1. operation in excess of any one of these conditions may result in permanent damage to this device. t a = 25 c except for t ch , t stg , and t max . chip size: 1410 x 1010 m m (55.5 x 39.7 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: 80 x 80 m m (2.95 x 2.95 mils), or larger HMMC-5620
2 HMMC-5620 dc specifications/physical properties [1] symbol parameters and test conditions units min. typ. max. i dd drain current (v dd = +5.0 v) ma 70 100 135 i dd drain current (v dd = +7.0 v) ma 105 q ch-bs thermal resistance (t backside = 25 c) c/w 70 note: 1. measured in wafer form with t chuck = 25 c. (except q ch-bs ). HMMC-5620 rf specifications/physical properties v dd = 5.0 v, i dd (q) = 100 ma, z in =z o = 50 w [1] symbol parameters and test conditions units min. typ. max. bw guaranteed bandwidth ghz 6 20 s 21 small signal gain db 15 17 21 d s 21 small signal gain flatness db 1.0 1.25 rl in input return loss db -15 -10 rl out output return loss db -15 -10 s 12 reverse isolation db -55 p -1db output power @ 1 db gain compression dbm 12 p sat saturated output power dbm 13 h 2 second harmonic power level (6 < ? o < 20) dbc -30 p o (? o ) = 10 dbm h 3 third harmonic power level (6 < ? o < 20) dbc -40 p o (? o ) = 10 dbm nf noise figure db 9.0 note: 1. small-signal data measured in wafer form with t chuck = 25 c. large-signal data measured on individual devices mounted in an hp83040 series modular microcircuit package at t a = 25 c.
3 HMMC-5620 applications the HMMC-5620 amplifier is designed for use as a general purpose wideband, high gain stage in communication systems and microwave instrumentation. it is ideally suited for broadband applications requiring high gain and excellent port matches over a 6 to 20 ghz frequency range. both rf input and output ports are ac-coupled on chip. biasing and operation this amplifier is biased with a single positive drain supply (v dd ). the recommended bias for the HMMC-5620 is v dd = 5.0 v, which results in i dd = 100 ma (typ.). no other bias supplies or connections to the device are required for 6 to 20 ghz operation. see figure 3 for assembly information. assembly techniques solder die-attach using a fluxless ausu solder preform is the recommended assembly method. gold thermosonic wedge bonding with 0.7 or 1.0 mil diameter au wire is recommended for d.c. bonds. for rf bonds, mwtc recommends low inductance mesh interconnections for best return loss performance. tool force should be 22 1 gram, stage temperature should be 150 2 c, and ultrasonic power and dura- figure 1. HMMC-5620 schematic. tion should be 64 1 db and 76 8 msec, respectively. the bonding pad and chip backside metallization is gold. for more detailed information see agilent application note #999 gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. rf input gnd rf output matching matching matching drain bias matching feedback ntwk feedback ntwk gnd 5 gnd gnd 5 matching feedback ntwk feedback ntwk gnd gnd 5 gnd gnd 5
4 figure 2. HMMC-5620 bonding pad locations. figure 3. HMMC-5620 assembly diagram. (for 6.0 C 20.0 ghz operation) l 3 2 nh (1.0 mil gold wire bond with length 3 100 mils) gold plated shim 68 pf chip capacitor input and output thin film circuits with 50 ohm transmission lines. (2 places) 2.0 mil nom. gap rf in v dd rf out notes: all dimensions in microns. rf pad dim: 80 x 80 m m. v dd pad dim: 110 x 90 m m all other dimensions: 5 m m (unless otherwise noted). chip thickness: 127 15 m m. rf input chip id no. rf output 1010 ( 10) 1410 ( 10) v dd 875 (v dd pad) 1325 (rf output pad) 85 (rf input pad) 910 (center of v dd pad) 350 350 0 0
5 HMMC-5620 typical performance typical scattering parameters [1] , (t chuck = 25 c, v dd = 5.0 v, i dd = 100 ma, z in = z o = 50 w ) freq. s 11 s 21 s 12 s 22 ghz db mag. ang. db mag. ang. db mag. ang. db mag. ang. 2.0 -10.7 0.292 -100.3 -46.1 0.0049 -174.7 -6.2 0.491 -52.2 -8.1 0.395 -152.2 3.0 -13.5 0.212 -117.5 -74.1 0.0002 114.0 3.5 1.489 -170.0 -10.1 0.311 -171.5 4.0 -14.6 0.186 -136.6 -63.1 0.0007 -122.1 13.0 4.486 82.2 -12.7 0.232 136.5 5.0 -15.8 0.162 -168.9 -60.4 0.0010 -161.8 16.0 6.310 -26.5 -21.7 0.082 61.5 6.0 -18.4 0.120 157.5 -66.5 0.0005 162.7 16.7 6.839 -116.8 -25.7 0.052 -86.6 7.0 -20.9 0.090 123.0 -62.7 0.0007 -175.3 16.3 6.531 173.2 -22.1 0.079 -131.4 8.0 -22.2 0.078 83.1 -61.3 0.0009 -178.0 16.0 6.310 114.2 -21.7 0.082 -150.6 9.0 -21.9 0.080 41.3 -66.5 0.0005 -62.4 16.0 6.310 60.2 -22.5 0.075 -156.7 10.0 -20.2 0.097 6.6 -68.1 0.0004 -159.3 16.1 6.383 9.0 -23.2 0.070 -152.9 11.0 -18.4 0.120 -21.0 -60.0 0.0010 -113.5 16.3 6.531 -40.7 -23.4 0.067 -143.0 12.0 -16.7 0.146 -46.4 -58.3 0.0012 -112.2 16.6 6.761 -89.9 -21.5 0.084 -136.8 13.0 -15.8 0.161 -70.0 -62.7 0.0007 -130.0 17.0 7.079 -139.4 -19.1 0.111 -133.7 14.0 -15.8 0.163 -90.0 -59.3 0.0011 -161.1 17.3 7.328 170.1 -17.2 0.137 -143.0 15.0 -16.4 0.151 -105.6 -57.5 0.0013 173.9 17.4 7.413 118.6 -16.0 0.159 -152.8 16.0 -17.5 0.134 -115.4 -57.1 0.0014 -165.9 17.5 7.499 66.0 -15.5 0.168 -167.9 17.0 -17.7 0.130 -114.1 -55.6 0.0017 175.5 17.3 7.328 12.3 -15.5 0.167 -179.7 18.0 -16.8 0.145 -118.4 -62.3 0.0008 98.2 17.0 7.079 -43.1 -16.5 0.149 162.9 19.0 -16.1 0.156 -131.6 -59.7 0.0010 112.8 16.7 6.839 -101.9 -17.7 0.130 145.2 20.0 -18.5 0.119 -143.8 -52.5 0.0024 72.9 16.0 6.310 -168.5 -20.8 0.091 93.0 21.0 -19.9 0.101 -108.1 -53.2 0.0022 -7.1 15.3 5.842 119.8 -20.4 0.096 -4.3 22.0 -14.2 0.195 -107.7 -59.3 0.0011 -8.0 10.7 3.414 54.2 -14.9 0.179 -63.6 23.0 -11.6 0.263 -125.6 -54.0 0.0020 -54.4 5.4 1.857 -0.4 -12.0 0.250 -93.3 24.0 -10.3 0.306 -142.2 -75.8 0.0002 -158.2 0.3 1.034 -47.5 -10.3 0.306 -110.4 25.0 -9.6 0.330 -157.2 -53.5 0.0021 -165.8 -4.5 0.595 -90.5 -9.0 0.353 -124.2 26.0 -9.2 0.347 -169.9 -59.0 0.0011 -137.5 -9.0 0.355 -131.1 -7.9 0.402 -134.3 26.5 -9.1 0.349 -357.4 -54.9 0.0018 78.2 -11.2 0.275 -511.3 -7.4 0.426 -140.2 note: 1. data obtained from on-wafer measurements. 246 12 810 161820 14 26.5 24 22 frequency (ghz) v dd = 5.0 v, i dd = 100 ma [1] figure 4. typical gain and reverse isolation vs. frequency. 23 18 13 8 3 small-signal gain, s 21 (db) ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 reverse isolation, s 12 (db) 246 12 810 161820 14 26.5 24 22 frequency (ghz) v dd = 5.0 v, i dd = 100 ma [1] figure 5. typical input and output return loss vs. frequency. ? ?0 ?5 ?0 ?5 ?0 ?5 input return loss, s 11 (db) ? ?0 ?5 ?0 ?5 ?0 ?5 output return loss, s 22 (db)
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifica- tions. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent sales representative. HMMC-5620 typical performance 46 810 1416 12 22 20 18 frequency (ghz) v dd = 5.0 v, i dd (q) = 100 ma figure 6. typical output power vs. frequency (with 5 v bias.) 17 15 13 11 9 7 5 output power (dbm) 45 6 8 71011 914 13 12 fundamental frequency, | o (ghz) v dd = 5.0 v, i dd (q) = 100 ma figure 7. typical second and third harmonics vs. fundamental frequency at p out = 10 dbm. ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 harmonics (dbc) harmonics (dbc) p(? db) p(? db) p( 5 db) 2nd harmonic 3rd harmonic 46 810 1416 12 22 20 18 frequency (ghz) v dd = 7.0 v, i dd (q) = 105 ma figure 8. typical output power vs. frequency (with 7 v bias). 17 15 13 11 9 7 5 output power (dbm) 45 6 8 71011 914 13 12 fundamental frequency, | o (ghz) v dd = 7.0 v, i dd (q) = 105 ma figure 9. typical second and third harmonics vs. fundamental frequency at p out = 10 dbm. ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 2nd harmonic 3rd harmonic p(? db) p(? db) p( 5 db) 57 11 91517 13 21 19 frequency (ghz) v dd = 5.0 v, i dd (q) = 100 ma figure 10. typical noise figure performance vs. frequency. 20 18 16 14 12 10 8 6 4 2 0 noise figure (db) 20 18 16 14 12 10 8 6 4 2 0 0.027 db/ c 0.035 db/ c 0.036 db/ c 246 12 810 161820 14 26.5 24 22 frequency (ghz) v dd = 5.0 v, i dd (@ t a = 25 c) = 100 ma figure 11. typical small-signal gain vs. temperature. 22 20 18 16 14 12 10 8 small-signal gain, s 21 (db) ?5 c ?5 c 0 c +25 c +55 c +85 c +100 c +125 c 20 18 16 14 12 10 8 6 4 2 0 20 18 16 14 12 10 8 6 4 2 0 associated gain (db) www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-5442e (11/99)
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