rev.2.00, mar.28.20 05, page 1 of 7 cr3km-12 thyristor low power use rej03g0386-0200 rev.2.00 mar.28.2005 features ? i t (av) : 3 a ? v drm : 600 v ? i gt : 100 a ? viso : 2000 v ? insulated type ? glass passivation type ? ul recognized : yellow card no. e223904 file no. e80271 outline 2 renesas package code: prss0003ab-a (package name: to-220fn) 1 3 1. cathode 2. anode 3. gate 1 3 2 applications tv sets, control of household equipment such as electric blanket, and other general purpose control applications maximum ratings voltage class parameter symbol 12 unit repetitive peak reverse voltage v rrm 600 v non-repetitive peak reverse voltage v rsm 720 v dc reverse voltage v r (dc) 480 v repetitive peak off-state voltage note1 v drm 600 v dc off-state voltage note1 v d (dc) 480 v
cr3km-12 rev.2.00, mar.28.20 05, page 2 of 7 parameter symbol ratings unit conditions rms on-state current i t (rms) 4.7 a average on-state current i t (av) 3.0 a commercial frequency, sine half wave 180 conduction, tc = 103 c surge on-state current i tsm 70 a 60hz sine half wave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 24.5 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 0.5 w average gate power dissipation p g (av) 0.1 w peak gate forward voltage v fgm 6 v peak gate reverse voltage v rgm 6 v peak gate forward current i fgm 0.3 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 2.0 g typical value isolation voltage viso 2000 v ta = 25 c, ac 1 minute, each terminal to case notes: 1. with gate to cathode resistance r gk = 220 ? . electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak reverse current i rrm ? ? 2.0 ma tj = 125 c, v rrm applied, r gk = 220 ? repetitive peak off-state current i drm ? ? 2.0 ma tj = 125 c, v drm applied, r gk = 220 ? on-state voltage v tm ? ? 1.6 v tc = 25 c, i tm = 10 a, instantaneous value gate trigger voltage v gt ? ? 0.8 v tj = 25 c, v d = 6 v, i t = 0.1 a gate non-trigger voltage v gd 0.1 ? ? v tj = 125 c, v d = 1/2 v drm r gk = 220 ? gate trigger current i gt 1 ? 100 note3 a tj = 25 c, v d = 6 v, i t = 0.1 a thermal resistance r th (j-c) ? ? 4.1 c/w junction to case note2 notes: 2. the contact thermal resistance r th (c-f) in case of greasing is 0.5c/w. 3. if special values of i gt are required, choose item d or e from t hose listed in the tabl e below if possible. item b c d e i gt ( a) 20 to 50 40 to 100 1 to 50 20 to 100 the above values do not include the current flowing through the 220 ? resistance between the gate and cathode.
cr3km-12 rev.2.00, mar.28.20 05, page 3 of 7 performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (c/w) time (s) gate trigger voltage vs. junction temperature gate trigger voltage (v) junction temperature (c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) gate characteristics 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) 10 0 23 7 510 1 40 20 10 2 4237 5 4 60 80 100 30 10 50 70 90 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 10 0 57 57 10 0 23 5710 1 23 5710 2 23 23 10 ?1 7 10 ?1 7 5 5 3 2 10 1 7 5 3 2 10 2 7 5 3 2 120 60 ?20 ?40 0 20 40 80 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 # 2 # 1 23 10 0 5710 1 23 5710 2 23 5710 3 10 0 23 10 ?3 5710 ?2 23 5710 ?1 23 5710 0 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ?1 1.0 0.7 0.6 0.3 0.2 0 120 ?40 ?20 20 80 0.1 0.5 0.4 0.8 0.9 060 40 100 tc = 25c v gd = 0.1v p gm = 0.5w p g(av) = 0.1w v fgm = 6v v gt = 0.8v i fgm = 0.3a i gt = 100 a (tj = 25c) i gt (25c) # 1 45 a # 2 18 a typical example distribution typical example
cr3km-12 rev.2.00, mar.28.20 05, page 4 of 7 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (c) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) case temperature (c) average on-state current (a) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (c) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (c) average on-state current (a) 8 6 3 2 1 7 5 4 0 5.0 0 1.0 4.0 2.0 3.0 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 5.0 0 1.0 4.0 2.0 3.0 = 30 120 60 90 180 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 180 90 120 60 30 8 6 3 2 1 7 5 4 0 5.0 0 4.0 1.0 2.0 3.0 = 30 60 90 180 120 160 120 60 40 20 140 100 80 0 5.0 0 4.0 1.0 2.0 3.0 180 60 90 = 30 120 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 = 180 90 120 60 30 360 resistive, inductive loads 360 resistive, inductive loads 360 resistive, inductive loads natural convection 360 resistive loads 360 resistive loads 360 resistive loads natural convection
cr3km-12 rev.2.00, mar.28.20 05, page 5 of 7 breakover voltage vs. junction temperature junction temperature (c) 100 (%) breakover voltage (tj = tc) breakover voltage (tj = 25c) holding current vs. junction temperature holding current (ma) junction temperature (c) holding current vs. gate to cathode resistance gate to cathode resistance (k ? ) 100 (%) holding current (r gk = rk ? ) holding current (r gk = 1k ? ) ?40?200 20406080100120140160 160 0 80 100 120 140 40 60 20 160 60 ?20 ?40 0 20 40 80 100 120 140 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 10 ?1 10 1 7 5 3 2 10 0 257 7 10 1 10 0 7 5 3 2 10 2 4 4 4 3 25 4 3 # 23 10 ?1 5710 0 23 5710 1 23 5710 2 400 0 200 250 300 350 100 150 50 # 2 # 1 turn-on time vs. gate current turn-on time ( s) gate current (ma) turn-off time vs. junction temperature turn-off time ( s) junction temperature (c) junction temperature (c) 100 (%) repetitive peak reverse voltage (tj = tc) repetitive peak reverse voltage (tj = 25c) repetitive peak reverse voltage vs. junction temperature ?40 ?20 0 20 40 60 80 100 120 140 160 160 0 80 100 120 140 40 60 20 80 60 30 20 10 70 50 40 0 160 0 40 80 120 140 20 60 100 typical example r gk = 220 ? distribution v d = 12v r gk = 1k ? typical example typical example i gt (25c) 25 a # 1 50 a # 2 i gt (25c) # 33 a typical example v d = 100v ta = 25c v d = 50v, v r = 50v dv/dt = 5v/ s i t = 2a typical example distribution typical example
cr3km-12 rev.2.00, mar.28.20 05, page 6 of 7 gate trigger current vs. gate current pulse width 100 (%) gate trigger current (tw) gate trigger current (dc) gate current pulse width ( s) 10 2 23 10 0 5710 1 23 5710 2 23 5710 3 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 typical example 0.1s tw
cr3km-12 rev.2.00, mar.28.20 05, page 7 of 7 package dimensions ? 2.0g mass[typ.] to-220fn prss0003ab-a renesas code jeita package code package name unit: mm 3.2 0.2 2.8 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 10 0.3 1.1 0.2 6.5 0.3 3 0.3 3.6 0.3 15 0.3 14 0.5 1.1 0.2 4.5 0.2 2.6 0.2 order code lead form standard packing quantity standard order code standard order code example straight type tube 50 type name cr3km-12 lead form tube 50 type name ? lead forming code CR3KM-12-A8 note : please confirm the specificat ion about the shipping in detail.
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