schottky barrier diode rb085b-90 ? application ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)power mold type.(cpd) 2)low v f 3)high reliability ? construction ? structure silicon epitaxial planar ? taping dimensions (unit : mm) ? absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c ? electrical characteristic (ta=25 ? c) symbol min. typ. max. unit forward voltage v f - - 0.83 v i f =5.0a reverse current i r - - 150 a v r =90v thermal impedance ? jc - - 6.0 ? c/w junction to case reverse voltage (dc) 90 average rectified forward current(*1) 10 parameter limits reverse voltage (repetitive peak) 90 (*1)business frequencies, rating of r-load, tc=85 ? c max. conditions 45 junction temperature 150 storage temperature ? 40 to ? 150 parameter forward current surge peak(60hz / 1cyc)(*1) cpd 1.6 2.3 1.6 2.3 3.0 2.0 6.0 6.0 (1) (3) (2) rohm : cpd manufacture date jeita : sc-63 1/3 2011.04 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb085b-90 ? electrical characteristic curves 0 5 10 15 20 25 30 ave:7.40ns ta=25 ? c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 50 100 150 200 250 300 ave:136.0a 8.3ms ifsm 1cyc 740 750 760 770 780 790 ta=25 ? c i f =5a n=30pcs 450 460 470 480 490 500 510 520 530 540 550 ave:498.5pf ta=25 ? c f=1mhz v r =0v n=10pcs 1 10 100 1000 0 102030 f=1mhz 0 20 40 60 80 100 120 140 160 180 200 ta=25 ? c v r =90v n=30pcs ave:14.3ua 0.01 0.1 1 10 100 1000 10000 100000 0 102030405060708090 ta=-25 ? c ta=25 ? c ta=75 ? c ta=125 ? c ta=150 ? c 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 900 ta=150 ? c ta=125 ? c ta=75 ? c ta=25 ? c ta=-25 ? c 10 100 1000 110100 8.3ms ifsm 1cyc 8.3ms forward voltage : v f (mv) v f -i f characteristics forward current:i f (a) reverse current:i r (ua) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (ua) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics trr dispersion map reverse recovery time:t rr(ns) ave:766.6mv 2/3 2011.04 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb085b-90 0 10 20 30 0 25 50 75 100 125 150 dc d=1/2 sin( ?? 180) 0 10 20 30 0 25 50 75 100 125 150 d=1/2 dc sin( ?? 180) 0 5 10 15 0 5 10 15 20 d=1/2 dc sin( ? 180) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =5a 300us tim mounted on epoxy board 10 100 1000 110100 t ifsm peak surge forward current : i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics transient thaermal impedance : rth ( ? c/w) forward power dissipation : pf(w) average rectified forward current : io(a) io-pf characteristics reverse power dissipation : p r (w) reverse voltage : v r (v) v r -p r characteristics ambient temperature : ta( ? c) derating curve"(io-ta) average rectifide forward current :i o(a) average rectified forward current : io(a) case temparature:tc( ? c) derating curve(io-tc) 0 2 4 6 8 10 0 102030405060708090 sin( ?? 180) d=1/2 dc t tj=150 ? c d=t/t t v r io v r =45v 0a 0v t tj=150 ? c d=t/t t v r io v r =45 v 0a 0v 0 5 10 15 20 25 30 c=100pf r=1.5k ? c=200pf r=0 ? ave:5.30kv electrostatic ddischarge test esd(kv) esd dispersion map no break at 30kv 3/3 2011.04 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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