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mil - prf - 19500/395g 6 march 2002 superseding mil - prf - 19500/395f 26 february 2001 performance specification semi conductor device, transistor, npn, silicon, switching types 2n3735, 2n3735l, 2n3737 and 2n3737ub, jan, jantx, jantxv, jans and janhc, jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for npn, silicon, switching transistors. four levels of product assurance are provided for each device type as specified in mil - prf - 19500 and two levels of product assurance are provide d for unencapsulated devices . 1.2 physical dimensions . see figure 1 (to - 39, to - 5 and to - 46), figure 2 (2n3737ub) and figure 3 (janhc and jankc). 1.3 maximum ratings . type p t t a = +25 c p t t c =+25 c v cbo v ceo v ebo i c r q jc r q ja t j and t st g w w v dc v dc v dc a dc c/mw c/w c 2n3735 1.0 (1) 2.9 (2) 75 40 5 1.5 .060 175 - 65 to +200 2n3737 0.5 (3) 1.9 (4) 75 40 5 1.5 .088 350 - 65 to +200 2n3737ub 0.5 (5) - 75 40 5 1.5 - 325 - 65 to +200 (1) derate linearly at 5.71 mw/ c above t a = +2 5 c. (2) derate linearly at 16.6 mw/ c above t c = +25 c. (3) derate linearly at 2.86 mw/ c above t a = +25 c. (4) derate linearly at 11.3 mw/ c above t c = +25 c. (5) derate linearly at 3.07 mw/ c above t a = +37.5 c. 1.4 primary electrical characteris tics . h fe3 (1) |h fe | v ce(sat) c obo pulse response limits v ce = 1.0 v dc v ce = 10 v dc i c = 500 ma dc v cb = 10 v dc i c = 0.5 a dc i c = 50 ma dc i b = 50 ma dc i e = 0 t d t r t off f = 100 mhz 100 khz f 1 mhz v dc pf ns ns ns min 40 2.5 max 140 6.0 0.5 9 8.0 40 60 (1) pulsed (see 4.5.1) amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch - pound the documentation and process conversion measures necessary to comply with this revision shall be completed by 6 june 2002. beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be address ed to: defense supply center, columbus, attn: dscc - vac, p.o. box 3990, columbus, oh 43216 - 5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil - prf - 19500/395g 2 figure 1. physical dimensions to - 39, to - 5, to - 46 .
mil - prf - 19500/395g 3 2n3735 dimensions, to - 39 dimensions symbol inches millimeters notes min max min max cd .305 .355 7.75 9.02 ch .240 .260 6.10 6.60 hd .355 .370 9.02 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7 ll .500 .750 12.70 19.05 7 lu .01 6 .019 0.41 0.48 7 l1 .050 1.27 7 l2 .250 6.35 7 p .100 2.54 tl .029 .045 0.74 1.14 3 tw .028 .034 0.71 0.86 9 q .040 1.02 4 r .010 0.25 10 a 45 tp 45 tp 6 2n3735l dimensions, to - 5 dimensions symbol inches millimeters notes min max min max cd .305 .355 7.75 9.02 ch .240 .260 6.10 6.60 hd .355 .370 9.02 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7 ll 1.500 1.750 38.10 44.45 7 lu .016 .019 0.41 0.48 7 l1 .050 1.27 7 l2 .250 6.35 7 p .100 2.54 tl .029 .04 5 0.74 1.14 3 tw .028 .034 0.71 0.86 9 q .040 1.02 4 r .010 0.25 10 a 45 tp 45 tp 6 figure 1. physical dimensions (to - 39, to - 5, to - 46) ? continued.
mil - prf - 19500/395g 4 2n3737 dimensions, to - 46 dimensions symbol inches millimeters notes min max min max c d .178 .195 4.52 4.95 ch .065 .085 1.65 2.16 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7 ll .500 1.750 12.70 19.05 7 lu .016 .019 0.41 0.48 7 l1 .050 1.27 7 l2 .250 6.35 7 tl .028 .048 0.71 1.22 3 tw .036 .046 0.91 1.17 9 q .040 1.02 4 r .007 .018 10 a 45 tp 45 tp 6 notes: 1. dimensions are in inches. lead 1 is emitter, lead 2 is base, and lead 3 is collector. 2. metric equivalents are given for general information only. 3. symbol tl is measured fr om hd maximum. 4. details of outline in this zone are optional. 5. symbol cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) - .0 00 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of tp relative to tab. device may be measured by direct methods or by gauge. 7. symbol lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. 8. lead number three is electrically connected to case. 9. beyond r maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 10. symbol r applied to both inside corners of tab. 11. in accordance with ansi y14.5 m, diameters are equivalent to f x symbology. 12. p dimension not applicable for the to - 46 case. figure 1. physical dimensions (to - 39, to - 5, to - 46) ? continued.
mil - prf - 19500/395g 5 dimensions symbol inches millimeters note min max min max a .046 .056 0.97 1.42 a1 .017 .035 0.43 0.89 b1 .016 .024 0.41 0.61 b2 .016 .024 0.41 0.61 b3 .016 .024 0.41 0.61 d .085 .108 2.41 2.74 d1 .071 .079 1.81 2.01 d2 .035 .039 0.89 0.99 d3 .085 .108 2.41 2.74 e .115 .128 2.82 3.25 e3 .128 3.25 l1 .022 .038 0.56 0.96 l2 .022 .038 0.56 0.96 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. figure 2. phys ical dimensions, surface mount (ub version) . ub
mil - prf - 19500/395g 6 e b die size: .027 x .027 inch (0.6858 x 0.6858 mm). die thickness: .008 .0016 inch (0.2032 0.04064 mm). base pad: .0045 x .0045 inch (0.1145 x 0.1145 mm). emitter pad: .004 x .0 05 inch (0.1016 x 0.1270 mm). back metal: gold, 6500 1950 ang. top metal: aluminum, 24500 2500 ang. back side: collector. glassivation: sio 2 , 7500 1500 ang. figure 3. janhc and jankc (a - version) die dimensions .
mil - prf - 19500/395g 7 2. applicable documents 2.1 g eneral . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while e very effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government docum ents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil - prf - 19500 - semiconductor devices, general specification for. sta ndard department of defense mil - std - 750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the document automation and production services (daps), bu ilding 4d (dpm - dodssp), 700 robbins avenue, philadelphia, pa 19111 - 5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. nothing in thi s document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product described herein shall consist of this document and mil - prf - 19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (qml) before contract award (see 4. 2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil - prf - 19500. 3.4 interface and physical dimensions . interface and physical dimensions shall be as specified in mil - prf - 19500, and on figure 1 (to - 39, to - 5 and to - 46) herein. 3.4.1 lead finish . lead finish shall be solderable in accordance with mil - prf - 19500, mil - std - 750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
mil - prf - 19500/395g 8 3.5 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table i. 3.6 electrical test requirements . the electrical test requirement s shall be group a as specified herein. 3.7 marking . marking shall be in accordance with mil - prf - 19500, except for the ub suffix package. marking on the ub package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. the prefixes jan, jantx, jantxv, and jans can be abbreviated as j, jx, jv, and js respectively. the "2n" prefix and the "ub" suffix can also be omitted. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspec tion (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4 and tables i, ii, and iii). 4.2 qualification inspection . qualification inspection shall be in accordance with mil - prf - 19500 and as specified herein. * 4.2.1 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil - prf - 19500. *4.3 screening (jantx, jantxv and jans levels only) . screening shall be in accordance with table iv of mil - prf - 19500, and as specified herein. the fol lowing measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. measurement screen (see table iv of mil - prf - 19500) jans level jantx and jantxv levels 3c thermal imped ance, method 3131 of mil - std - 750. thermal impedance, method 3131 of mil - std - 750. 9 i cbo2 and h fe3 not applicable 11 i cbo2 ; h fe3 ; d i cbo2 = 100 percent or 25 na dc, whichever is greater; d h fe3 = 15 percent of initial value. i cbo2 and h fe3 12 see 4.3.1 see 4.3.1 13 subgroups 2 and 3 of table i herein; d i cbo2 = 100 percent or 25 na dc, whichever is greater; d h fe3 = 15 percent of initial value. subgroup 2 of table i herein; d i cbo2 = 100 percent or 25 na dc, whichever is greater; d h fe3 = 15 percent of initial value.
mil - prf - 19500/395g 9 4.3.1 power burn - in conditions . power burn - in conditions are as follows: adjust the power dissipated to achieve t j = 135 c minimum. the minimum power dissipated shall be 75 percent of the maximum rated as defined in 1.3 . v cb = 10 - 30 v dc. note: no heat sink or forced air cooling on the devices shall be permitted. 4.3.2 screening (janhc and jankc) . screening of jan hc and jankc die shall be in accordance with mil - prf - 19500, "discrete semiconductor die/chip lot acceptance". burn - in duration for the jankc level follows jans requirements; the janhc follows jantx requirements. 4.4 conformance inspection . conforman ce inspection shall be in accordance with mil - prf - 19500 and as specified herein. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil - prf - 19500, and table i herein. 4.4.2 group b inspection . group b inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table via (jans) of mil - prf - 19500 and 4.4.2.1. electrical measurements (end - points) and delta requirements shall be in accordance with group a, subgroup 2 and tabl e iii herein; delta requirements only apply to subgroups b4 and b5. see 4.4.2.2 for jan, jantx, and jantxv group b testing. electrical measurements (end - points) and delta requirements for jan, jantx, and jantxv shall be after each step in 4.4.2.2 and sha ll be in accordance with group a, subgroup 2 and table iii herein. * 4.4.2.1 group b inspection, table via (jans) of mil - prf - 19500 . subgroup method condition b3 2037 test condition a. b4 1037 v cb = 10 - 30 v dc. b5 1027 (note: if a failure occurs , resubmission shall be at the test conditions of the original sample). v cb = 10 v dc; p d 3 100 percent of maximum rated p t (see 1.3). option 1: 96 hours minimum, sample size in accordance with table via of mil - prf - 19500, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hours., sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum. b6 3131 see 4.5.2.
mil - prf - 19500/395g 10 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exercised, the failed assembly lot shall be scrapped. step method condition 1 1039 steady - state life: test condition b, 340 hours min., v cb = 10 - 30 v dc, power shall be applied to achieve t j = +150 c minimum using a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. n = 45 devices, c = 0. 2 1039 the steady - state life test of step 1 shall be extended to 1,000 hrs for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b step 2 shall not be required more than once for any single waf er lot. n = 45, c = 0. 3 1032 high temperature life (non - operating), t = 340 hours, t a = +200 c. n = 22, c = 0. 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, ja ntx, and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil - prf - 19500. b. must be chosen from an inspection l ot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, janj, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection . group c inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table vii of mil - prf - 1950 0, and in 4.4.3.1 (jans) and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end - points) and delta requirements shall be in accordance with group a, subgroup 2 and table iii herein; delta requirements only apply to su bgroup c6. 4.4.3.1 group c inspection, table vii (jans) of mil - prf - 19500 . subgroup method condition c2 2036 test condition e (not applicable to 2n3737ub). c6 1026 v cb = 10 - 30 v dc; 1,000 hours; power shall be applied to achieve t j = +150 c mini mum, using a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. * 4.4.3.2 group c inspection, table vii (jan, jantx, and jantxv) of mil - prf - 19500 . subgroup method condition c2 2036 test condition e (not applicable to 2n3737ub). c5 3 131 see 4.5.2. c6 not applicable.
mil - prf - 19500/395g 11 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is su bmitted to and passes group a tests for conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for c6 life test may be pulled prior to the application of final lead finish. testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 group e inspection . group e inspection shall be performed for qualification or requalificat ion only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of table ii tests, the tests specified in table ii herein shall be performed to maintain qualification. 4.5 methods of i nspection . methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil - std - 750. 4.5.2 thermal resistance . thermal resista nce measurements shall be conducted in accordance with method 3131 of mil - std - 750. the following details shall apply: a. collector current magnitude during power application shall be 45 ma dc minimum for 2n3735 and 2n3735l and 31 ma dc minimum for 2n3737. b. collector to emitter voltage magnitude shall be 20 v dc. c. reference temperature measuring point shall be the case. d. reference point temperature shall be 25 c. e. mounting arrangement shall be with heat sink to case. f. thermal resistance maximum limit of 60 c/ w for 2n3735, 2n3735l, and 88 c/w for 2n3737 and 2n3737ub.
mil - prf - 19500/395g 12 table i. group a inspection . inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 1 2 / visual and mechanical examination 3 / 2071 n = 45 devi ces, c = 0 solderability 3 / 4 / resistance to solvents 3 / 4 / 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 hermetic seal 4 / 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs n = 11 wires, c = 0 subgroup 2 breakdown voltage collector to emitter 3011 bias condition d; i c = 10 ma dc, pulsed (see 4.5.1) v (br)ceo 40 v dc collector to base cutoff current 3036 bias condition d; v (br)cbo = 75 v dc. i cbo1 10 m a dc emitter to base cutoff current 3061 bias condition d; v (br)ebo = 5 v dc. i ebo1 10 m a dc collector to base cutoff current 3036 bias condition d; v cb = 30 v dc i cbo2 250 na dc collector to emitter cutoff current 3041 bias condition a; v ce = 30 v dc v eb = 2.0 v dc i cex1 200 na dc emitter to base cutoff current 3061 bias condition d; v eb = 4.0 v dc i ebo2 100 na dc see footnotes at end of table.
mil - prf - 19500/395g 13 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 2 - continued forward current transfer ratio 3076 v ce = 1.0 v dc; i c = 10 ma dc h fe1 35 forward current transfer ratio 3076 v ce = 1.0 v dc; i c = 150 ma dc, pulsed (see 4.5.1) h fe2 40 forward current transfer ratio 3076 v ce = 1.0 v dc; i c = 500 ma dc, pulsed (see 4.5.1) h fe3 40 140 forward current transfer ratio 3076 v ce = 1.5 v dc; i c = 1.0 a dc, pulsed (see 4.5.1) h fe4 20 80 collector to emitter voltage (saturated) 3071 i c = 10 ma dc, i b = 1.0 ma dc v ce(sat)1 0.2 v dc collector to emitter voltage (saturated) 3071 i c = 150 ma dc, i b = 15 ma dc, pulsed (see 4.5.1) v ce(sat)2 0.3 v dc forward current transfer ratio 3076 v ce = 5.0 v dc; i c = 1.5 a dc, pulsed (see 4.5.1) h fe5 20 v dc collector to emitter voltage (saturated) 3071 i c = 500 ma dc, i b = 50 ma dc, pulsed (see 4.5.1) v ce(sat)3 0.5 v dc collector to emitter voltage (saturated) 3071 i c = 1.0 a dc, i b = 100 ma dc, pulsed (see 4.5.1) v ce(sat)4 0.9 v dc base to emitter saturated voltage 3066 test condition a, i c = 10 ma dc, i b = 1.0 ma dc v be(sat)1 0.8 v dc base to emitter saturated voltage 3066 test condition a, i c = 150 ma dc, i b = 15 ma dc , pulsed (see 4.5.1) v be(sat)2 1.0 v dc base to emitter saturated voltage 3066 test condition a, i c = 500 ma dc, i b = 50 ma dc, pulsed (see 4.5.1) v be(sat)3 1.2 v dc base to emitter saturated voltage 3066 test condition a, i c = 1.0 a dc, i b = 100 ma dc, pulsed (see 4.5.1) v be(sat)4 0.9 1.4 v dc see footnotes at end of table. "
mil - prf - 19500/395g 14 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 3 high - temperatu re operation: t a = +150 c collector to emitter cutoff current 3041 bias condition a; v ce = 30 v dc, v eb = 2.0 v dc i cex2 250 m a dc low - temperature operation: t a = - 55 c forward current transfer ratio 3076 v ce = 1.0 v dc; i c = 50 0 ma dc, pulsed (see 4.5.1) h fe6 15 subgroup 4 magnitude of common - emitter small - signal short - circuit forward current transfer ratio 3306 v ce = 10 v dc; i c = 50 ma dc; f = 100 mhz |h fe | 2.5 6.0 open circuit output capacitance 32 36 v cb = 10 v dc, i e = 0, 100 khz f 1 mhz c obo 9.0 pf input capacitance (output open - circuited) 3240 v eb = 0.5 v dc, i c = 0, 100 khz f 1 mhz c ibo 80 pf pulse response: delay response 3251 test condition a; v cc = 30 v dc, v be = 2 v dc, i c = 1.0 a dc, i b1 = 100 ma dc, (see figure 4) t d 8.0 ns rise time 3251 test condition a; v cc = 30 v dc, v be = 2 v dc, i c = 1.0 a dc, i b1 = 100 ma dc, (see figure 4) t r 40 ns turn - off time 3251 test condition a; v cc = 30 v dc, i c = 1.0 a dc, i b1 = - i b2 = 100 ma dc, (see figure 5) t off 60 ns subgroups 5, 6 and 7 not applicable 1 / for sampling plan, unless otherwise specified see mil - prf - 19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil - prf - 19500/395g 15 table ii. group e inspection (all quality levels) ? for qualification only . * inspection mil - std - 750 qualification method conditions subgroup 1 temperature cycling (air to air) 1051 test condition c, 500 cycles 45 devices c = 0 hermetic seal fine leak gross leak 1071 electrical measurements see group a, subgroup 2 herein. subgroup 2 intermittent life 1037 v cb = 10 v dc, 6,000 cycles. 45 devi ces c = 0 electrical measurements see group a, subgroup 2 herein. subgroup 3 not applicable subgroup 4, 5, 6 and 7 not applicable subgroup 8 reverse stability 1033 condition a for devices 3 400 v condition b for devices < 400 v 4 5 devices c = 0
mil - prf - 19500/395g 16 table iii. groups b and c delta measurements . 1 / 2 / 3 / step inspection mil - std - 750 symbol limits unit method conditions min max 1. collector to base cutoff current 3036 bias condition d, v cb = 30 v dc d i cbo 2 100 percent of initial value or 25 na dc whichever is greater. 2. forward - current transfer ratio 3076 v ce = 1 v dc, i c = 500 ma dc, pulsed (see 4.5.1) d h fe3 25 percent change from initial value. 3. collector to emitter voltage (saturated) 3071 i c = 500 ma dc, i b = 50 ma dc, pulsed (4.5.1 ) d v ce(sat)3 50 mv dc change from previous measured value. 1 / the delta measurements for table via (jans) of mil - prf - 19500 are as follows: a. subgroup 4, see table iii herein, step 3. b. subgr oup 5, see table iii herein, step 3. 2 / the delta measurements for 4.4.2.2 (jan, jantx, jantxv) are as follows: see table iii herein, steps 1 and 2, all subgroups. 3 / the delta measurements for table vii of mil - prf - 19500 are as follows: subgroup 6, see table iii herein, steps 1 and 2 for (jans).
mil - prf - 19500/395g 17 notes: 1. the rise time (t r ) of the applied pulse shall be 0.1 ns, duty cycle 2 percent, and the generator source impedance shall be 50 w . 2. sampling oscilloscope: z in 3 100 k w , c in 12 pf, rise time 5 ns. figure 4. test circuit and waveforms for measuring turn - on . notes: 1. the rise time (t r ) of the applied pulse shall be 0.1 ns, duty cycle 2 percent, and the generator source impedance shall be 50 w . 2. sampling oscilloscope: z in 3 100 k w , c in 12 pf, rise time 5 ns. figure 5. test circuit and waveforms for measuring turn - off .
mil - prf - 19500/395g 18 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirements shall be as spec ified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense a gency's automated packaging files, cd - rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 intended use . th e notes specified in mil - prf - 19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, a nd if required, the specific issue of individual documents referenced (see 2.2.1). c. the lead finish as specified (see 3.4.1). d. packaging requirements (see 5.1). 6.3 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requireme nts, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualification of products may be obtained from defense supply center, columbus, attn: dscc/vqe, p.o. box 3990, columbus, oh 43216 - 5000. 6.4 suppliers of janhc and jankc die . the qualified janhc and jankc suppliers with th e applicable letter version (example janhca2n3737) will be identified on the qpl. die ordering information pin manufacturer 34156 2n3737 janhca2n3737 jankca2n3737 6.5 changes from previous issue . the margins of this specification are marked w ith an asterisk to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notations. bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue.
mil - prf - 19500/395g 19 custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 nasa - na dla - cc rev iew activities: (project 5961 - 2558) army - ar, av, mi, sm navy - as, mc air force ? 19, 71, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request co pies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requireme nts. i recommend a change: 1. document number mil - prf - 19500/395g 2. document date 6 march 2002 2. document title semiconductor device, transistor, npn, silicon, switching types 2n3735, 2n3735l, 2n3737 and 2n3737ub, jan, jantx, jantxv, jans an d janhc, jankc 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. o rganization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614 - 692 - 0510 850 - 0510 614 - 692 - 6939 alan.barone@dscc.dla.mil c. address defense supply center columbus, attn: dscc - vac p.o. box 3990 columbus, oh 43216 - 5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc - lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060 - 6221 telephone (703) 767 - 6888 dsn 427 - 6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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