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d a t a sh eet product speci?cation supersedes data of february 1996 file under discrete semiconductors, sc06 1997 aug 13 discrete semiconductors bu505; bu505d silicon diffused power transistors
1997 aug 13 2 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d description high-voltage, high-speed switching npn power transistor in a to-220ab package. the bu505d has an integrated efficiency diode. applications horizontal deflection circuits of colour television receivers. pinning pin description 1 base 2 collector; connected to mounting base 3 emitter fig.1 simplified outline (to-220ab) and symbols. a. bu505. b. bu505d. mbk106 123 3 2 1 mbb008 3 2 1 mbb077 quick reference data thermal characteristics symbol parameter conditions typ. max. unit v cesm collector-emitter peak voltage v be =0 - 1500 v v ceo collector-emitter voltage open base - 700 v v cesat collector-emitter saturation voltage i c = 2 a; i b = 900 ma - 1v v f diode forward voltage (bu505d) i f =2a - 1.8 v i csat collector saturation current - 2a i c collector current (dc) see fig.3 - 2.5 a i cm collector current (peak value) see fig.3 - 4a p tot total power dissipation t mb 25 c; see fig.4 - 75 w t f fall time inductive load; see fig.7 0.9 -m s symbol parameter value unit r th j-mb thermal resistance from junction to mounting base 1.67 k/w
1997 aug 13 3 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v cesm collector-emitter peak voltage v be =0 - 1500 v v ceo collector-emitter voltage open base - 700 v i csat collector saturation current - 2a i c collector current (dc) see fig.3 - 2.5 a i cm collector current (peak value) see fig.3 - 4a i b base current (dc) - 2a i bm base current (peak value) - 4a p tot total power dissipation t mb 25 c; see fig.4 - 75 w t stg storage temperature - 65 +150 c t j junction temperature - 150 c fig.2 transient thermal impedance. handbook, full pagewidth mgb859 10 10 - 1 10 - 2 10 - 2 10 - 1 110 t p (ms) 10 2 1 z th j - mb (k/w) d = 1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 0
1997 aug 13 4 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d characteristics t j =25 c unless otherwise speci?ed. note 1. measured with a half-sinewave voltage (curve tracer). symbol parameter conditions min. typ. max. unit v ceosust collector-emitter sustaining voltage see figs 5 and 6 700 -- v v cesat collector-emitter saturation voltage i c = 2 a; i b = 900 ma -- 1v v besat base-emitter saturation voltage i c = 2 a; i b = 900 ma -- 1.3 v v ebo emitter-base voltage i e = 10 ma; i c =0 - 6 - v v f diode forward voltage (bu505d) i f =2a -- 1.8 v i ces collector-emitter cut-off current v ce =v cesmax ; v be =0; note 1 -- 0.15 ma v ce =v cesmax ; v be =0; t j = 125 c; note 1 -- 1ma i ebo emitter-base cut-off current v eb =5v; i c =0 -- 1ma h fe dc current gain v ce =5v; i c = 100 ma 6 13 30 f t transition frequency v ce =5v; i c = 100 ma; f=5mhz - 7 - mhz c c collector capacitance v cb = 10 v; i e =i e =0; f=1mhz - 65 - pf switching times in horizontal de?ection circuit (see fig.7) t s storage time i cm = 2 a; i b(end) = 900 ma; v dr = - 4v l b =10 m h - 6.5 -m s l b =15 m h - 7.5 -m s l b =25 m h - 9.5 -m s t f fall time i cm = 2 a; i b(end) = 900 ma; v dr = - 4v l b =10 m h - 0.9 -m s l b =15 m h - 0.9 -m s l b =25 m h - 0.85 -m s
1997 aug 13 5 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d fig.3 forward bias soar. t mb =25 c. i - region of permissible dc operation. ii - permissible extension for repetitive pulse operation. (1) p tot max and p tot peak max lines. (2) second breakdown limits. handbook, full pagewidth mgb942 1 10 10 2 10 3 10 4 v ce (v) 10 10 - 1 10 2 10 - 2 i c (a) d = 0.01 ii i cm max i c max (1) (2) t p = 10 m s 2 ms 10 ms dc 20 m s 100 m s 200 m s 500 m s 50 m s i
1997 aug 13 6 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d fig.4 power derating curve. handbook, halfpage 050 t mb ( o c) 100 150 120 0 40 80 mgd283 p tot max (%) fig.5 test circuit for collector-emitter sustaining voltage. h andbook, halfpage mge252 + 50 v 100 to 200 w 30 to 60 hz l 6 v oscilloscope vertical horizontal 1 w 300 w fig.6 oscilloscope display for collector-emitter sustaining voltage. handbook, halfpage mge239 i c (ma) 250 200 100 0 min v ceosust v ce (v) fig.7 switching time waveforms. handbook, halfpage mbh382 time time i b (end) 10% 90% t s t f i c i csat i b
1997 aug 13 7 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d package outline references outline version european projection issue date iec jedec eiaj sot78 to-220ab d d 1 q p l 123 l 2 (1) b 1 e e b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 dimensions (mm are the original dimensions) a e a 1 c note 1. terminals in this zone are not tinned. q l 1 unit a 1 b 1 d 1 e p mm 2.54 qq a b d c l 2 (1) max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 l 1 e l 97-06-11
1997 aug 13 8 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1997 aug 13 9 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d notes
1997 aug 13 10 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d notes
1997 aug 13 11 philips semiconductors product speci?cation silicon diffused power transistors bu505; bu505d notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca55 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - 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