EIC8596-2 updated 07/25/2007 8.50-9.60 ghz 2-watt internally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2007 features ? 8.50-9.60ghz bandwidth ? input/output impedance matched to 50 ohms ? +33.5 dbm output power at 1db compression ? 8.0 db power gain at 1db compression ? 30% power added efficiency ? -46 dbc im3 at po = 22.5 dbm scl ? 100% tested for dc, rf, and r th electrical characteristics (t a = 25 c) symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 8.50-9.60ghz v ds = 10 v, i dsq 550ma 32.5 33.5 dbm g 1db gain at 1db compression f = 8.50-9.60ghz v ds = 10 v, i dsq 550ma 7.0 8.0 db ? g gain flatness f = 8.50-9.60ghz v ds = 10 v, i dsq 550ma 0.6 + 0.8 db pae power added efficiency at 1db compression v ds = 10 v, i dsq 550ma f = 8.50-9.60ghz 30 % id 1db drain current at 1db compression f = 8.50-9.60ghz 600 700 ma im3 output 3rd order intermodulation distortion ? f = 10 mhz 2-tone test; pout = 22.5 dbm s.c.l 2 v ds = 10 v, i dsq 65% idss f = 9.60ghz -43 -46 dbc i dss saturated drain current v ds = 3 v, v gs = 0 v 1000 1250 ma v p pinch-off voltage v ds = 3 v, i ds = 10 ma -2.5 -4.0 v r th thermal resistance 3 11 12 o c/w notes: 1. tested with 100 ohm gate resistor. 2. s.c.l. = single carrier level. 3. overall rth depends on case mounting. maximum rating at 25 c 1,2 symbols parameters absolute 1 continuous 2 vds drain-source voltage 15 10v vgs gate-source voltage -5 -4v igsf forward gate current 21.6ma 7.2ma igsr reverse gate current -3.6ma -1.2ma pin input power 32.5dbm @ 3db compression tch channel temperature 175 o c 175 o c tstg storage temperature -65 to +175 o c -65 to +175 o c pt total power dissipation 12.5w 12.5w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce m ttf below design goals.
EIC8596-2 updated 07/25/2007 8.50-9.60 ghz 2-watt internally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2007 packages outline dimensions in inches, tolerance + .005 unless otherwise specified EIC8596-2 (hermetic) EIC8596-2nh (non-hermetic) all dimensions in inches excelics yyww yyww excelics all dimensions in inches caution! esd sensitive device. caution! esd sensitive device. ordering information part number packages grade 1 f test (ghz) p 1db (min) im 3 (min) 2 EIC8596-2 hermetic industrial 8.50-9.60ghz 32.5 -43 EIC8596-2nh non-hermetic industrial 8.50-9.60ghz 32.5 -43 notes: 1. contact factory for military and hi-rel grades. 2. exact test conditions are specified in ?electrical characteristics? table. disclaimer excelics semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, function or design. excelics does not assume any liability arising out of the application or use of any product or circuit described herein. life support policy excelics semiconductor products are not authoriz ed for use as critical components in life support devices or systems without the express written approval of excelics semiconductor, inc. as here in: 1. life support devices or systems are devices or system s which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labe ling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life suppo rt device or system, or to affect its safety or effectiveness EIC8596-2 EIC8596-2nh
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