v 2.00 f e a t u r e s highly integrated pa/attenuator and t/r switch low current consumption: 120 ma t y p . switch and attenuator controls cmos compatible high power (140 mw) and low power (16 mw) transmit power contr o l +5 v/-5 v fixed supply v o l t a g e s d e s c r i p t i o n m/a-com? am55-0007 is a gaas power amplifier with an integrated transmit/receive switch in a low cost ssop 24 plastic package. the am55-0007 employs active bias cir- cuits that eliminate the need for external bias adjustment. a ?leep mode?is incorporated which turns off current draw f r om the positive supply of the pa during receive mode. the am55-0007 provides a 10-db step attenuator for use as a transmit power contr o l l e r . the am55-0007 is designed for low power consumption and is ideally suited for fsk systems in the 2.4 - 2.5 ghz bands (north american ism, japanese rcr.32 and e u r opean etsi). typical applications include wlan and w i r eless portable data collection. this amplifier is also available with diversity switching (am55-0001). either power amplifier can be combined with a transceiver ic (md58-0001) to form a complete rf fr o n t e n d . m/a-com's am55-0007 is fabricated using a mature 0 . 5 - m i c r on gate length gaas process. the process featur e s full passivation for increased per f o r mance and r e l i a b i l i t y . 140 mw power amplifier with t/r switch 2.4 - 2.5 g h z a m 5 5 - 0 0 0 7 s s o p - 2 4 coming attractions p arameter t est conditions units min. t yp. max. po wer amplifier linear gain high p ow er mode db 23 26.5 low p ow er mode db 12 16 vswr in both modes 1.5:1 output p ow er p in = -3 dbm high p ow er mode dbm 19 21.5 low p ow er mode dbm 8 12 second harmonic p in = -3 dbm high p ow er mode dbc -25 third harmonic dbc -17 i dd (v dd1 + v dd2 + v dd p a) ma 120 200 t/r switc h insertion loss db 1.2 isolation db 10 15 vswr in/out 1.5:1 t ypical electrical specifications test conditions: f r e q u e n cy : 2.45 ghz, v d d = 5 v 5 % , v g g = - 5 v ?5 % , t a = +25? l l l l l p art number description am55-0007 ssop 24-lead plastic package AM55-0007TR f orward t ape & reel * am55-0007rtr re v erse t ape & reel * am55-0007smb designer? kit o r dering inf o r m a t i o n * if specific reel size is required, consult factory for par t n umber assignment. dimensions are in inches o v er millimeters .
v 2.00 14 0 mw power amplifier with t/r switch a m 5 5- 0 0 0 7 pin no. pin name description 1 v gg negative voltage to all activ e bias networks 2 t/r ctrl 0 v for transmit mode, +5 v for receive mode 3 rx out output of t/r switch for receive mode 4 gnd dc and rf ground 5 pa out output of t/r switch for transmit mode 6 v dd pa v dd f or output stage of pa, v dd f or active bias circuit of output stage 7 gnd dc and rf ground 8 a ttn ctrl 0 v for high po w er mode, +5 v for lo w po w er mode 9 gnd dc and rf ground 10 gnd dc and rf ground 11 gnd dc and rf ground 12 gnd dc and rf ground 13 gnd dc and rf ground 14 gnd dc and rf ground 15 gnd dc and rf ground 16 gnd dc and rf ground 17 v dd2 v dd f or both diversity and t/r s witches , v dd f or second stage of p a 18 gnd dc and rf ground 19 v dd1 v dd f or first stage of pa, v dd of active bias for the first and second stage of p a 20 gnd dc and rf ground 21 gnd dc and rf ground 22 p a in rf input to p a 23 gnd dc and rf ground 24 sleep ctrl 0 v pa "on" mode, -5 v pa "sleep" mode . sleep mode shuts off activ e bias and "pinches off" all pa fets . pin configuration functional diagram and pin configuration absolute maximum ratings 1 p arameter absolute maximum max. input p ower 2 +23 dbm operating v oltage s 2,3 v dd = 8 v v gg = -8 v operating t emperature -40? to +85? storage t emperature -65? to + 1 50? 1.exceeding these limits may cause permanent damage . 2. ambient temperature (t a ) = +25? 3. |v dd | + |v gg | not to exceed 12 volts . truth t a bl e control line a ttn t/r sleep operating ctrl ctrl ctrl * mode x 1 -5 v receiv e 0 0 0 v high p ow er 1 0 0 v low p ow er x 1 -5 v sleep mode x - don? care ?? 0 v to 0.2 v @ 100 ? ? = v dd to v dd -0.2 v @ 200 ? * control voltage le v els between 0 v and v gg m ust be used on sleep ctrl control line . (pin 24) t/r ctrl rx out gnd pa out vdd pa attn ctrl gnd gnd gnd gnd gnd v gg gnd gnd gnd gnd gnd gnd gnd gnd pa in sleep ctrl v dd1 v dd2
v 2.00 14 0 mw power amplifier with t/r switch a m 5 5 - 0 0 0 7 small signal power amplifier 1 frequency (ghz) linear gain v s v d d , v g g frequency (ghz) 2 . 0 2 . 2 2 . 4 2 . 6 2 . 8 3 . 0 28 26 24 22 20 18 input ma t c h frequency (ghz) 2 . 0 2 . 2 2 . 4 2 . 6 2 . 8 3 . 0 0 -5 -10 -15 -20 -25 -30 output ma t c h 2 . 0 2 . 2 2 . 4 2 . 6 2 . 8 3 . 0 0 -4 -8 -12 -16 -20? + 7 0 ?c + 2 5 ?c -20? + 7 0 ?c + 2 5 ?c 6.0 v 4.0 v linear gain frequency (ghz) 2 . 0 2 . 2 2 . 4 2 . 6 2 . 8 3 . 0 30 26 22 18 14 -20? + 7 0 ?c + 2 5 ?c 1 . unless otherwise noted, f r e q u e n c y : 2.45 ghz, v d d = 5 v 5%, v g g = - 5 v 5%, t a = +25? return loss frequency (ghz) 2 . 0 2 . 2 2 . 4 2 . 6 2 . 8 3 . 0 0 -5 -10 -15 -20 input o u t p u t i n s e r tion loss & isola t i o n frequency (ghz) 2 . 0 2 . 2 2 . 4 2 . 6 2 . 8 3 . 0 0 -1 -2 -3 -4 -5 0 -5 -10 -15 -20 -25 t/r switch small signal p e r fo r m a n c e 1
v 2.00 14 0 mw power amplifier with t/r switch a m 5 5 - 0 0 0 7 power amplifier power p e r fo r m a n c e 1 current draw a n d p o wer added efficiency p in (db) p in (dbm) - 1 5 - 1 2 - 9 - 6 - 3 0 160 140 120 100 80 60 25 20 15 10 5 0 -20? -20? + 7 0 ?c + 2 5 ?c + 7 0 ?c + 2 5 ?c p o u t vs v d d , v gg - 1 5 - 1 1 - 7 - 3 1 24 22 20 18 16 14 12 10 4.0 v 5.5 v 4.5 v 5.0 v 6.0 v 1 . unless otherwise noted, f r e q u e n c y : 2.45 ghz, v d d = 5 v 5%, v g g = - 5 v ?%, t a = +25? p in (dbm) p o u t vs p i n - 1 5 - 1 2 - 9 - 6 - 3 0 24 22 20 18 16 14 12 10 0 -1 -2 -3 -4 -5 -6 -7 -20? compression + 7 0 ?c + 2 5 ?c
v 2.00 14 0 mw power amplifier with t/r switch a m 5 5 - 0 0 0 7 1 0.710 in. pin label v alue purpose c1 - c4 33 pf bypass (ghz) c5 - c8 220 pf bypass (mhz) c9 0.01 ? bypass (khz) recommended pcb configuration l a yout v i e w c r oss-section v i e w external cir c u i t r y p a r ts list external cir c u i t r y all off-chip components are low-cost surface mount components obtain - able from multiple sources . (0.020 in.x 0.040 in.or 0.030 in.x 0.050 in.) v gg t/r ctrl rx out pa out v dd pa attn ctrl 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 v dd1 v dd2 pa in sleep ctrl c4 c8 c3 c7 c5 c1 c9 c6 c2 the pcb dielectric between rf traces and rf gr o u n d layers should be chosen to reduce rf discontinuities between 50- w lines and package pins. m/a-com r e c - ommends an fr-4 dielectric thickness of 0.008 in. (0.2 mm), yielding a 50- w line width of 0.015 in. (0.38 mm). the recommended metalization thickness is 1 oz. copper. shaded traces are vias to dc routing layer and traces on dc routing layer. biasing pr o c e d u r e the am55-0007 r e q u i r es the v g g bias be applied prior to a n y v d d bias. permanent damage may occur if this p ro c e d u r e is not followed. all fets in the pa will draw excessive current and damage internal cir c u i t r y . rf traces + components rf ground dc routing customer defined c7 c3 c8 c4 c2 c6 c9 c5 c1
v 2.00 14 0 mw power amplifier with t/r switch a m 5 5 - 0 0 0 7 pa out to rec. pa in 1 pin 1 pin 2 pin 19 pin 20 pcb dc function device pin pcb dc function device pin connector number connector number 1 v dd1 (+ 5 v) 19 11 logic high (v dd1 ) 19 2 v dd2 (+ 5 v) 17 12 t/r control (0 v/+5 v) 2 3 n/c n/c 13 logic low (gnd) n/c 4 n/c n/c 14 t/r control (0 v/+5 v) 2 5 n/c n/c 15 logic high (v dd1 ) 19 6 n/c n/c 16 a ttn control (0 v/+5 v) 8 7 negative logic high (gnd) n/c 17 logic low (gnd) n/c 8 p a control (0 v/-5 v) 24 18 a ttn control (0 v/+5 v) 8 9 negative logic low (v gg ) 1 19 v dd p a (+5 v) 6 10 p a control (0 v/-5 v) 24 20 v gg ( - 5 v) 1 the am55-0007smb designer's kit allows for immediate evaluation of m/a-com's am55-0007 integrated power amplifier with t/r and diversity switch. the evaluation board consists of an am55-0007, recommended external surface mount cir- cuitry, rf connectors and a dc multi-pin connector, all mounted to a multi-layer fr-4 pcb. other items included in the designer's kit: a floppy disk (with typical per f o r mance data and a .dxf file of the recommended pcb layout) and any addi- tional application notes. the am55-0007smb evaluation pcb and block diagram are illustrated below with all functional ports labeled. d e s i g n e r s kit (am55-0007smb) p/a switch sample board functional block dia g r a m pa in rx out (to rec) pa out dc connector pinout
v 2.00 140 mw power amplifier with t/r switch a m 5 5 - 0 0 0 7 p ort reference appr o ximate loss (db) p a in 0.25 p a out 0.25 rx out (to rec) 0.25 pcb dc connector jumper settings e v aluation pcb and rf connector losses the dc connector on the designer s kit pcb allows selection of all the device s operating modes. it is accomplished by one or more of the following meth- o d s : 1 . a mating female multi-pin connector (newark e l e c t r onics stock # 46f-4658, not included) 2 . w i r es soldered to the necessary pins (not included) 3 . clip leads (not included) 4 . a combination of clip leads or wires and jumpers (jumpers included as r e q u i re d ) vdd1vdd2 attn tr ctl pa ctl jumper 1 (pa sleep contr o l ) position 1 = pa on position 2 = pa sleep mode jumper 2 (t/r switch contr o l ) position 1 = receive mode position 2 = transmit mode jumper 3 (attenuator contr o l ) position 1 = attenuator on (low power t r a n s m i t ) position 2 = attenuator off (high power t r a n s m i t ) in order to prevent transients which may damage the mmic, please adhere to the following pr o c e d u re . t u r n on all power supplies and set all voltages to 0 volts before connecting the power supplies to the dc connector. set jumpers for desired test mode. apply a -5.0 volt supply to dc connector pin 20 (v g g ) . apply a +5.0 volt supply to the dc connector pin 1 (v d d 1 ) . apply a +5.0 volt supply to the dc connector pin 2 (v d d 2 ) . apply a +5.0 volt supply to the dc connector pin 19 ( v d d p a ) . adjust v g g supply to -5 volts. adjust all v d d supplies to +5 volts. hot switching of jumpers will not damage device. to power off, reverse above pr o c e d u re . 1 . set v d d 1 & v d d 2 & v d d pa to 0 volts. 2 . set v g g to 0 volts. 3 . disconnect bias lines from dc connector. 4 . t u r n off power supplies. am55-0007smb biasing pr o c e d u r e jumper 1 jumper 2 jumper 3 jumper 1 jumper 2 jumper 3 pin 2 pin 2 pin 1 pin 1 jumpers (position 1) jumpers (position 2) pin 20 pin 20 pin 19 pin 19
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