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savantic semiconductor product specification silicon pnp power transistors 2SB511 description with to-220c package complement to type 2sd325 low collector saturation voltage applications designed for use in low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -35 v v ceo collector-emitter voltage open base -35 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -1.5 a i cm collector current -peak -3.0 a t a =25 1.75 p c collector dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -50~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB511 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -35 v v cesat collector-emitter saturation voltage i c =-1.5a; i b =-0.15a -1.0 v v be base-emitter on voltage i c =-1a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-20v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 40 320 h fe-2 dc current gain i c =-0.1a ; v ce =-2v 35 f t transition frequency i c =-0.5a ; v ce =-5v 8 mhz h fe-1 classifications c d e f 40-80 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon pnp power transistors 2SB511 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm)

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