upa814t npn silicon high frequency transistor ? small package style: 2 ne688 die in a 2 mm x 1.25 mm package ? low noise figure: nf = 1.5 db typ at 2 ghz ? high gain bandwidth: f t = 9 ghz ? high collector current: 100 ma features outline dimensions (units in mm) package outline s06 description the upa814t is two npn high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin smt package. each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. the high f t , low voltage bias and small size make this device suited for various hand-held wireless applications. absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v cbo collector to base voltage v 9 v ceo collector to emitter voltage v 6 v ebo emitter to base voltage v 2 i c collector current ma 100 p t total power dissipation 1 die mw 110 2 die mw 200 t j junction temperature c 150 t stg storage temperature c -65 to +150 note: 1.operation in excess of any one of these parameters may result in permanent damage. part number upa814t package outline s06 symbols parameters and conditions units min typ max i cbo collector cutoff current at v cb = 5v, i e = 0 m a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 m a 0.1 h fe 1 forward current gain at v ce = 1 v, i c = 3 ma 80 110 160 f t gain bandwidth at v ce = 3 v, i c = 20 ma, f = 2 ghz ghz 9.0 cre 2 feedback capacitance at v cb = 1 v, i e = 0, f = 1 mhz pf 0.75 0.85 |s 21e | 2 insertion power gain at v ce = 3 v, i c =20 ma, f = 2 ghz db 6.5 nf noise figure at v ce = 3 v, i c = 7 ma, f = 2 ghz db 1.5 h fe1 /h fe2 h fe ratio: 0.85 electrical characteristics (t a = 25 c) notes: 1. pulsed measurement, pulse width 350 m s, duty cycle 2 %. 2. the emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. for tape and reel version use part number UPA814T-T1, 3k per reel. note: pin 3 is identified with a circle on the bottom of the package. pin out 1. collector transistor 1 2. base transistor 2 3. collector transistor 2 4. emitter transistor 2 5. emitter transistor 1 6. base transistor 1 california eastern laboratories h fe1 = smaller value of q 1 , or q 2 h fe2 = larger value of q 1 or q 2 2.1 0.1 1.25 0.1 0 ~ 0.1 0.15 0.9 0.1 0.7 2.0 0.2 0.65 1.3 1 2 3 4 5 6 0.2 (all leads) +0.10 - 0.05
total power dissipation vs. ambient temperature collector current vs. base to emitter voltage total power dissipation, p t (mw) ambient temperature, t a ( c) base to emitter voltage, v be (v) collector current, i c (ma) collector current vs. collector to emitter voltage collector to emitter voltage, v ce (v) collector current, i c (ma) typical performance curves (t a = 25 c) dc current gain, h fe dc current gain vs. collector current collector current, i c (ma) gain bandwidth product vs. collector current insertion power gain vs. collector current gain bandwidth product, f t (ghz) collector current, i c (ma) collector current, i c (ma) insertion power gain, is 21e i 2 (db) upa814t 200 100 0 50 100 150 2 elements in total per element free air 100 50 20 10 2 1 0.5 0.1 0.2 0.05 0.02 0.01 5 0 0.5 1 v ce = 1 v 30 20 10 0123456 200 m a 180 m a 160 m a 140 m a 120 m a 100 m a 80 m a 60 m a 40 m a l b = 20 m a 200 100 0 12 51020 50 0.1 0.2 0.5 100 v ce = 1 v 10 5 0 1235710 v ce = 1 v f= 2 ghz 10 5 0 1235710 v ce = 1 v f= 2 ghz
frequency, f (ghz) maximum available power gain, mag (db) insertion power gain, is 21e i 2 (db) feedback capacitance vs. collector to base voltage noise figure, nf (db) noise figure vs. collector current maximum available gain/insertion power gain vs. frequency collector to base voltage, v cb (v) typical performance curves (t a = 25 c) exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com printed in usa on recycled paper -1/99 data subject to change without notice part number quantity packaging UPA814T-T1 3000 tape & reel ordering information upa814t collector current, l c (ma) 3 2 1 0 1235710 v ce = 1 v f = 2 ghz f = 1 ghz feddback capacitance, c re (pf) 1.0 0.5 0.1 1 5 10 20 f = 1 mhz 30 20 10 0 0.1 0.5 1 5 v ce = 1 v lc = 5 ma mag is 21e i 2 noise figure, nf (db) noise figure vs. frequency frequency, f (ghz) 1.5 1 0.5 0.1 0.5 1.0 2 v ce = 1 v lc = 5 ma
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