2SD1085(k) silicon npn triple diffused application high voltage switching, igniter outline to-220ab 1. base
2. collector
(flange)
3. emitter 1 2 3 4.5 k w
(typ) 250 w
(typ) 1 2 3 absolute maximum ratings (ta = 25c) item symbol rating unit collector to base voltage v cbo 300 v collector to emitter voltage v ceo 300 v emitter to base voltage v ebo 7v collector current i c 3a collector peak current i c(peak) 6a collector power dissipation p c * 1 40 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c.
2SD1085(k) 2 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 300 500 v i c = 0.1 ma, i e = 0 collector to emitter sustain voltage v ceo(sus) 300 v i c = 2 a, pw = 50 s, f = 50 hz, l = 10 mh emitter to base breakdown voltage v (br)ebo 7vi e = 50 ma, i c = 0 collector cutoff current i ceo 100 a v ce = 300 v, r be = dc current transfer ratio h fe 500 v ce = 2 v, i c = 2 a* 1 collector to emitter saturation voltage v ce(sat) 1.5 v i c = 2 a, i b = 20 ma* 1 base to emitter saturation voltage v be(sat) 2.0 v turn on time t on 1.0 s i c = 2 a, i b1 = Ci b2 = 20 ma turn off time t off 22s note: 1. pulse test. 60
40
20 0 50 100 150 collector peak current p c (w) maximum collector dissipation curve case temperature t c ( c) 10 0.5 collector current i c (a) 3 1.0 0.3 0.1 0.03 0.01 0.003 0.001 1.0 2 5 10 20 50 100 200 500 ta = 25 c i c (peak) i c max. dc operation (t c = 25 c) pw = 10 ms 1shot pw = 1 ms 1shot area of safe operation collector to emitter voltage v ce (v)
2SD1085(k) 3 5
4
3
2
1 0 collector current i c (a) t c = 25 c 12345 0.4 0.2 ma i b = 0 0.6 0.8 1.0 typical output characteristics collector to emitter voltage v ce (v) 10,000 0.1 dc current transfer ratio h fe t c = 75 c 2,000 1,000 500 100 200 5,000 0.2 0.5 1.0 2 5 10 v ce = 2v pluse test 25 ?5 dc current transfer ratio
vs. collector current collector current i c (a) 10 0.1 v be(sat) 5 2 1.0 0.5 0.2 0.1 0.2 0.5 1.0 2 5 10 collector to emitter saturation voltage v ce(sat) (v) base to emitter saturation voltage v be(sat) (v) t c = 25 c i c = 100i b pluse test v ce(sat) saturation voltage vs. collector current collector current i c (a)
2SD1085(k) 4 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachi?s permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachi?s products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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