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  2sb1072(l), 2sb1072(s) silicon pnp triple diffused application medium speed power amplifier complementary pair with 2sd1520(l)/(s) outline 4 1 2 3 4 3 2 1 1. base 2. collector 3. emitter 4. collector dpak s type l t y pe 3 k w (typ) 0.4 k w (typ) i d 1 2, 4 3
2sb1072(l), 2sb1072(s) 2 absolute maximum ratings (ta = 25 q c) item symbol rating unit collector to base voltage v cbo C100 v collector to emitter voltage v ceo C80 v emitter to base voltage v ebo C7 v collector current i c C4 a c to e diode forward current i d * 1 4a collector peak current i c(peak) C8 a collector power dissipation p c * 1 20 w junction temperature tj 150 q c storage temperature tstg C55 to +150 q c note: 1. value at t c = 25 q c electrical characteristics (ta = 25 q c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo C80 v i c = C25 ma, r be = f emitter to base breakdown voltage v (br)ebo C7 v i e = C50 ma, i c = 0 collector cutoff current i cbo C100 p av cb = C80 v, i e = 0 i ceo C10 p av ce = C60 v, r be = f dc current transfer ratio h fe 1000 20000 v ce = C3 v, i c = C2 a* 1 collector to emitter saturation v ce(sat)1 C1.5v i c = C2 a, i b = C4 ma* 1 voltage v ce(sat)2 C3.0v i c = C4 a, i b = C40 ma* 1 base to emitter saturation v be(sat)1 C2.0v i c = C2 a, i b = C4 ma* 1 voltage v be(sat)2 C3.5v i c = C4 a, i b = C40 ma* 1 c to e diode forward voltage v d 3.0 v i d = 4 a* 1 turn on time t on 0.5 p si c = C2 a, i b1 = Ci b2 = C4 ma storage time t stg 1.5 p s fall time t f 1.0 p s note: 1. pulse test.
2sb1072(l), 2sb1072(s) 3 maximum collector dissipation curve 30 20 10 0 50 100 case temperature t c ( c) 150 collector power dissipation p c (w) area of safe operation collector to emitter voltage v ce (v) i c(peak) i c(max) pw = 10 ms 1 ms 100 m s dc(t c = 25 c) ta = 25 c 1 shot pulse ? ? ? ?0 ?00 ?0 ?0 collector current i c (a) 1 m s 20 10 ? ?.0 ?.3 ?.1 ?.03 i b = ?.3 ma ?.4 ?.5 ?.6 ?.7 ?.8 ?.9 ?.0 typical output characteristics ? ? ? ? ? 024 collector to emitter voltage v ce (v) ? ? ?0 collector current i c (a) p c = 20 w v ce = ? v dc current transfer ratio vs. collector current 30000 10000 3000 1000 300 100 30 ?.1 ?.3 dc current transfer ratio h fe ?.0 ?0 ? collector current i c (a) t c = 75 c t c = ?5 c t c = 25 c
2sb1072(l), 2sb1072(s) 4 collector current i c (a) collector to emitter saturation voltage v ce(sat) (v) base to emitter saturation voltage v be(sat) (v) v be(sat) ?00 ?0 ?.0 ?.1 ?.1 ?.3 ?.0 ? ?0 saturation voltage vs. collector current v ce(sat) i c /i b = 500 t c = 75 c t c = 25 c t c = ?5 c t stg 30 10 3 1.0 switching time t ( m s) 0.3 0.1 0.03 ?.1 ?.3 ?.0 ? ?0 switching time vs. collector current t on t f v cc = ?0 v i c = 500 i b1 = ?00 i b2 collector current i c (a) transient thermal resistance 100 ms?0 sec. 100 10 1.0 0.1 0.1 1.0 10 time t 1.0 (ms) 100 (s) 10 1 ms?00 ms t c = 25 c thermal resistance q j-c ( c/w)
2sb1072(l), 2sb1072(s) 5 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
2sb1072(l), 2sb1072(s) 6 hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 for further information write to: hitachi america, ltd. semiconductor & ic div. 2000 sierra point parkway brisbane, ca. 94005-1835 u s a tel: 415-589-8300 fax: 415-583-4207 hitachi europe gmbh electronic components group continental europe dornacher stra? 3 d-85622 feldkirchen m?nchen tel: 089-9 91 80-0 fax: 089-9 29 30 00 hitachi europe ltd. electronic components div. northern europe headquarters whitebrook park lower cookham road maidenhead berkshire sl6 8ya united kingdom tel: 0628-585000 fax: 0628-778322 hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 0104 tel: 535-2100 fax: 535-1533 hitachi asia (hong kong) ltd. unit 706, north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel: 27359218 fax: 27306071


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