? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 low barrier schottky chip rev. v7 MA4E2054L-1261 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? low i r (<100na @ 1v, <500na @ 3v) ? designed for high volume, low cost detector and mixer applications ? low noise figure: 5.7 db (ssb) at x-band ? high detector sensitivity: -55 dbm tss ? low capacitance: 0.14 pf (typ.) ? low 1/f noise ? rohs* compliant description and applications the MA4E2054L-1261 diode is a low barrier, n-type, silicon schottky device. it is useful as a high performance mixer or detector diode at frequencies from vhf through x-band. these chips can be used in automatic assembly processes due to their 0.004? gold bond pads and sturdy construction. single junction chip outline ma4e2054 typ. 0.014? 0.36 typ. 0.014? 0.36 typ. 0.004? 0.10 inches mm maximum ratings 1. at 25 c case temperature, derate linearly to zero watts at 150 c case temperature. parameter symbol unit values operating temperature t op c -65 to +150 storage temperature t stg c -65 to +150 incident rf power (cw) p t mw 75 1 reverse voltage @ 25 c v r v 3 forward current i f ma 20 esd rating 2 - - class 0 typical rf performance @ +25 c parameter condition symbol specification breakdown voltage i r = 10 a v b 3.0 v min. reverse leakage current v r = 1 v i r 100 na max. reverse leakage current v r = 3 v i r 500 na max. total capacitance v r = 0 v f = 1 mhz c t 0.16 pf max. dynamic resistance 2 i f = 10 ma r d 17 ohms max. forward voltage i f = 1 ma v f 250 mv min. 350 mv min. 2. human body model parameter conditions typical mixer noise figure 3 f = 9.375 ghz lo = 0 dbm 5.7 db (ssb) if impedance i f = 30 mhz 200 ohms tangential signal sensitivity 4 i f = 20 ma bw = 2 mhz video nf = 1.5 db -55 dbm detector output, voltage at -30 dbm 4 r l = 100k ohms i f = 20 a 20 mv detector output voltage at -30 dbm 4 r l = 1m ohm zero bias 20 mv 3. fixture tuned to 9.375 ghz. 4. fixture tuned to 2.5 ghz. see figures on page 3 for untuned fixture performance. 2. r d = r s + r j where r j = 26 i f (in ma) * restrictions on hazardous substanc es, european union directive 2002/95/ec. electrical specificat ions @ +25 c
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 low barrier schottky chip rev. v7 MA4E2054L-1261 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. circuit model (chip) spice model parameters is = 3 x 10- 8 a m = 0.50 rs = 11 ? eg = 0.69 ev n = 1.05 bv = 5.0 v tt = 0 s ibv = 1 x 10 - 5 a c t = 0.13 x 10 - 12 pf vj = 0.40 v typical performance curves @ +25c detector output voltage vs input power and load resistance. diode forward biased at 20 a. untuned fixture at 9.375 ghz detector output voltage vs input power and load resistance. diode at zero bias. untuned fixture at 9.375 ghz forward current vs. forward voltage and temperature tuned fixture noise figure vs. lo power at 9.375 ghz 0.01 0.1 1 10 0 50 100 150 200 250 300 350 400 450 500 v f (mv) i f (ma) +125 o c 25 o c -50 o c 0.01 0.1 1 10 100 1000 10000 -50 -40 -30 -20 -10 0 10 20 input po w er (dbm ) v out (mv) - - - - - - 10k ohms ________ 1m ohm __ __ __ 5k ohms 3 4 5 6 7 8 9 0.01 0.1 1 10 lo po w er (m w ) noise figure (db) 0.01 0.1 1 10 100 1000 10000 -40 -30 -20 -10 0 10 input po w er (dbm) v out (mv) - - - - - - 1m ohm ________ 100k ohms __ __ __ 10k ohms __ . . __ . . 5k ohms recommended assembly: 1. one mil diameter gold wire 2. ball bond 3. conductive silver epoxy for die mounting 0.06 pf 11 ? r j 0.04 pf r s
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