phase control scr 1 bulletin i2107 40tps.. series v t < 1.45v @ 40a i tsm = 400a v r / v d = 1200v 09-96 rev. 1.0 major ratings and characteristics i t(av) sinusoidal 35 a waveform i rms 55 a v rrm / v drm 800 and 1200 v i tsm 400 a v t @ 40 a, t j = 25c 1.45 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c characteristics 40tps... units to-247ac description/features the 40tps... new series of silicon controlled rec- tifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. typical applications are in input rectification (soft start) and these products are designed to be used with international rectifier input diodes, switches and output rectifiers which are available in identi- cal package outlines.
2 40tps.. series 09-96 rev. 1.0 voltage ratings part number v rrm /v drm , max. repetitive v rsm , maximum non repetitive i rrm /i drm peak and off-state voltage peak reverse voltage 125c vvma 40tps08 800 900 5 40tps12 1200 1300 absolute maximum ratings parameters 40tps.. units conditions v r = rated v rrm / v drm i t(av) max. average on-state current 35 a 50% duty cycle @ t c = 85 c, sinusoidal wave form i t(rms) max. continuous rms 55 on-state current. as ac switch i tsm max. peak one cycle non-repetitive 335 a 2 s 10ms sine pulse, rated v rrm applied initial surge current 400 10ms sine pulse, no voltage reapplied t j = t j max. i 2 t max. i 2 t for fusing 560 10ms sine pulse, rated v rrm applied 800 10ms sine pulse, no voltage reapplied i 2 ? t max. i 2 ? t for fusing 8000 a 2 ? s t = 0.1 to 10ms, no voltage reapplied v t(to) 1 low level value of threshold 1.02 v t j = 125c voltage v t(to) 2 high level value of threshold 1.23 voltage r t1 low level value of on-state 9.74 m w slope resistance r t2 high level value of on-state 7.50 slope resistance v tm max. peak on-state voltage 1.85 v @ 110a, t j = 25c di/dt max. rate of rise of turned-on current 150 a/s t j = 25c i h max. holding current 200 ma i l max. latching current 400 i rrm / max. reverse and direct 0.5 t j = 25c i drm leakage current 5.0 t j = 125c dv/dt max. rate of rise of off-state voltage 500 v/s t j = 125c
3 40tps.. series 09-96 rev. 1.0 p gm max. peak gate power 10 w p g(av) max. average gate power 2.5 i gm max. peak gate current 2.5 a - v gm max. peak negative gate voltage 10 v v gt max. required dc gate voltage 4.0 t j = - 40c anode supply = 6v to trigger 2.5 t j = 25c resistive load 1.7 t j = 125c i gt max. required dc gate current 270 ma t j = - 40c to trigger 150 t j = 25c 80 t j = 125c v gd max. dc gate voltage not to trigger 0.25 v t j = 125c, v drm = rated value i gd max. dc gate current not to trigger 6 ma parameters 40tps.. units conditions triggering thermal-mechanical specifications t j max. junction temperature range - 40 to 150 c t stg max. storage temperature range - 40 to 150 r thjc max. thermal resistance junction 0.6 c/w dc operation to case r thja max. thermal resistance junction 40 to ambient r thcs max. thermal resistance case 0.2 mounting surface, smooth and greased to heatsink wt approximate weight 6 (0.21) g (oz.) t mounting torque min. 6 (5) kg-cm max. 12 (10) (lbf-in) case style (to-247) parameters 40tps.. units conditions
4 40tps.. series 09-96 rev. 1.0 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 60 70 80 90 100 110 120 130 0 5 10 15 20 25 30 35 40 30 90 120 180 maximum allowable case temperature (c ) conduction angle 60 average on-state current (a) 40tps.. r (dc) = 0.6 k/w thjc 60 70 80 90 100 110 120 130 0 102030405060 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 40tps.. r (dc) = 0.6 k/w thjc 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 rms limit maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 conduction angle 40tps.. t = 125c j 0 10 20 30 40 50 60 70 80 90 0 102030405060 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) 40tps.. t = 125c j 150 200 250 300 350 400 1 10 100 number of equal amplitude half cycle curren t pulses (n) peak half sine wave on-state current (a) at any rated load condition and with rated v applied following surge. rrm initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 40tps.. per junction 150 200 250 300 350 400 0.01 0.1 1 10 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current initial t = 125c no voltage reapplied rated v reapplied rrm j 40tps.. per junction versus pulse train duration. control of conduction may not be maintained.
5 40tps.. series 09-96 rev. 1.0 1 10 100 1000 0.511.522.533.544.55 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j 40tps.. per junction fig. 7 - on-state voltage drop characteristics fig. 8 - gatecharacteristics fig. 9 - thermal impedance z thjc characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate p ulse (4) (3) (2) (1) (1) pgm = 100 w, tp = 500 s (2) pgm = 50 w, tp = 1 ms (3) pgm = 20 w, tp = 25 ms (4) pgm = 10 w, tp = 5 ms instantaneous gate current (a) instantaneous gate voltage (v) tj = -40 c tj = 25 c tj = 125 c a)recommended load line for b)recommended load line for vgd igd frequency limited by pg(av) rated di/dt: 20 v, 30 ohms tr = 0.5 s, tp >= 6 s <= 30% rated di/dt: 20 v, 65 ohms tr = 1 s, tp >= 6 s 40tps.. 0.01 0.1 1 0.001 0.01 0.1 1 square wave pulse duration (s) thjc steady state value (dc operati on) transient thermal impedance z (k/w) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 single pulse 40tps..
6 40tps.. series 09-96 rev. 1.0 outline t able dimensions in millimeters and inches 15.90 (0.626) 15.30 (0.602) 14.20 (0.559) 14. 80 (0.583) 3.70 (0.145) 4.30 (0.170) 5.30 (0.208) 5.70 (0.225) 5.50 (0.217) 4.50 (0.177) (2 plcs.) 3.55 (0.139) 3.65 (0.144) 2.20 (0.087) max. 1.00 (0.039) 1.40 (0.056) 0.40 (0.213) 0.80 ( 0.032) 4.70 ( 0.185) 5.30 (0.209) 1.5 ( 0.059) 2.5 ( 0.098) 2.40 (0.095) max. 10.86 (0.427) 10. 94 (0.430) 20.30 (0.800) 19.70 (0.775) dia. 12 3 ordering information table 40 t p s 12 device code 1 5 24 3 1 - current rating 2 - circuit configuration t = thyristor 3 - package t = to-247 4 - type of silicon s = standard recovery rectifier 5 - voltage code: code x 100 = v rrm 08 = 800v 12 = 1200v (g) 3 2 (a) 1 (k)
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