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| a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1202 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv ceo i c = 1.0 ma 20 v bv cbo i c = 100 a 30 v bv ebo i e = 100 a 3 v i cbo v cb = 20 v 10 a h fe v ce = 10 v i c = 80 ma 30 80 200 --- f t v ce = 10 v i e = 60 ma f = 200 mhz 2800 3300 mhz c cb v cb = 10 v f = 1.0 mhz 2.5 pf ? s21e ? 2 v ce = 10 v i e = 60 ma f = 500 mhz 8.5 db nf v ce = 10 v i c = 10 ma v f = 500 mhz 3.5 db npn silicon high frequency transistor 2sc2952 description: the 2sc2952 is a high frequency transistor designed for general purpose vhf-uhf amplifier applications. maximum ratings i c 250 ma v ce 30 v p diss 3.5 w @ t c = 25 o c t j -65 to +200 o c t stg -65 to +200 o c jc 50 o c/w package style to-33
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