jiang su changjiang electronics technology co.,ltd to - 92 plastic - encapsulate transistors a44 transistor ? npn ? features power dissipation p cm : 0.625 w ? t amb=25 ??? collector current i cm : 0.2 a c ollector - base voltage v ( br ) cbo : 400 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = 100 | a ? i e =0 400 v c ollector - emitter brea kdown voltage v(br) ceo i c = 1 ma , i b =0 400 v emitter - base breakdown voltage v(br) e b o i e = 100 | a ? i c =0 5 v collector cut - off current i cbo v cb =400 v , i e =0 0.1 | a collector cut - off current i ceo v ce = 400 v , 5 | a emitter cut - off cur rent i ebo v e b = 4 v , i c =0 0.1 | a h fe ? 1 ? v ce = 10v , i c = 10 m a 80 300 h fe ? 2 ? v ce = 10v, i c = 1m a 70 dc current gain h fe ? 3 ? v ce = 10v , i c = 100 m a 60 v ce (sat) i c = 10 ma , i b = 1m a 0.2 v collector - emitter saturation voltage v ce (sat) i c = 50 ma , i b = 5m a 0.3 v base - emitter sataration voltage v be (sat) i c = 10 ma , i b = 1 m a 0.75 v transition frequency f t v ce = 20 v, i c =10ma f =30mhz 50 mhz 1 2 3 to ?a 92 1.emitter 2.base 3 . collector
d b e a a1 c l d1 e e1 t o-92 p ackage outline dimensions symbol a a1 b c d d1 e e e1 l ? min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 dimensions in millimeters dimensions in inches 0.050typ 1.270typ |?
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