2N2222AQCSM prelim. 1/99 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail sales@semelab.co.uk website http://www.semelab.co.uk quad high speed, medium power npn switching transistor in a hermetically sealed ceramic surface mount package for high reliability applications features ? quad silicon planar epitaxial npn transistors ? hermetic ceramic surface mount package ? cecc screening options ? space quality levels options ? high speed saturated switching applications: hermetically sealed quad surface mount version of the popular 2n2222a for high reliability / space applications requiring small size and low weight devices. per device v cbo collector C base voltage v ceo collector C emitter voltage (i b = 0) v ebo emitter C base voltage (i b = 0) i c collector current p d device dissipation (t a 25c) p d derate above 50c total device p d total device dissipation (t a 25c) r q ja thermal resistance junction to ambient r q jc thermal resistance junction to case t stg storage temperature 75v 40v 6v 600ma 500mw 2.0mw / c 2.0 w 60c/w 30c/w C55 to 200c mechanical data dimensions in mm (inches) absolute maximum ratings per side (t c = 25c unless otherwise stated) lcc6 package underside view 8.89 (0.350) 1.27 (0.050) typ. 7.24 (0.285) 0.65 (0.025) typ. 2.54 (0.100) 1.14(0.045) typ 0.23 (0.009) rad. 18 plcs 0.30 (0.012) rad. 4 plcs 1.14 0.15 (0.045 0.006) 1.40 (0.055) nom. 1 15 2 3 4 5 6 7 8 9 10 11 12 13 14 16 17 18 1 C base 1 2 C emitter 1 3 C collector 1 7.C collector 2 8.C emitter 2 9 C base 2 10.C base 3 11 C emitter 3 12 C collector 3 16.C collector 4 17.C emitter 4 18.C base 4 4,5,6,13,14,15 C n/c
2N2222AQCSM prelim. 1/99 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail sales@semelab.co.uk parameter test conditions min. typ. max. unit t d delay time t r rise time t s storage time t f fall time parameter test conditions min. typ. max. unit parameter test conditions min. typ. max. unit i c = 10ma i c = 10 m a i e = 10 m ai c = 0 i b = 0 v ce = 60v i e = 0 v cb = 60v t c = 125c i c = 0 v eb = 3v (off) v ce = 60v v eb = 3v (off) i c = 150ma i b = 15ma i c = 500ma i b = 50ma i c = 150ma i b = 15ma i c = 500ma i c = 50ma i c = 0.1ma v ce = 10v i c = 1ma v ce = 10v i c = 10ma v ce = 10v i c = 10ma v ce = 10v i c = 150ma v ce = 10v i c = 150ma v ce = 1v i c = 500ma v ce = 10v electrical characteristics per device (t c = 25c unless otherwise stated) v ceo(sus)* collector C emitter sustaining voltage v (br)cbo* collector C base breakdown voltage v (br)ebo* emitter C base breakdown voltage i cex* collector cut-off current (i c = 0) i cbo* collector C base cut-off current i ebo* emitter cut-off current (i c = 0) i bl* base current v ce(sat)* collector C emitter saturation voltage v be(sat)* base C emitter saturation voltage h fe* dc current gain t a = C55c 40 75 6 10 10 10 10 20 0.3 1 0.6 1.2 2 35 50 75 35 100 300 50 40 v v v na na m a na na v v f t transition frequency c ob output capacitance c ib input capacitance h fe small signal current gain i c = 20ma v ce = 20v f = 100mhz v cb = 10v i e = 0 f = 1.0mhz v be = 0.5v i c = 0 f = 1.0mhz i c = 1ma v ce = 10v f = 1khz i c = 10ma v ce = 10v f = 1khz 300 8 30 50 300 75 375 mhz pf pf 10 25 225 60 ns ns ns ns v cc = 30v v be = 0.5v (off) i c1 = 150ma i b1 = 15ma v cc = 30v i c = 150ma i b1 = i b2 = 15ma f t is defined as the frequency at which h fe extrapolates to unity. * pulse test t p = 300 m s , d 2% dynamic characteristics per device (t c = 25c unless otherwise stated) switching characteristics per device(resistive load) (t c = 25c unless otherwise stated)
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