? semiconductor components industries, llc, 2003 october, 2003 ? rev. 3 1 publication order number: NTD14N03R/d NTD14N03R power mosfet 14 amps, 25 volts n?channel dpak features ? planar hd3e process for fast switching performance ? low r ds(on) to minimize conduction loss ? low c iss to minimize driver loss ? low gate charge ? optimized for high side switching requirements in high?efficiency dc?dc converters maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain?to?source voltage v dss 25 v dc gate?to?source voltage ? continuous v gs 20 v dc thermal resistance ? junction?to?case total power dissipation @ t a = 25 c drain current ? continuous @ t a = 25 c, chip ? continuous @ t a = 25 c, limited by package ? single pulse (tp 10 s) r jc p d i d i d i d 6.0 20.8 14 11.4 28 c/w w a a a thermal resistance ? junction?to?ambient (note 1) total power dissipation @ t a = 25 c drain current ? continuous @ t a = 25 c r ja p d i d 80 1.56 3.1 c/w w a thermal resistance ? junction?to?ambient (note 2) total power dissipation @ t a = 25 c drain current ? continuous @ t a = 25 c r ja p d i d 120 1.04 2.5 c/w w a operating and storage temperature range t j , t stg ?55 to 150 c maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using 0.5 sq. in pad size. 2. when surface mounted to an fr4 board using minimum recommended pad size. http://onsemi.com 14 amperes, 25 volts r ds(on) = 70.4 m (typ) d s g n?channel device package shipping ordering information dpak 75 units/rail marking diagram & pin assignments 14n03 = device code y = year ww = work week case 369c yww t14 n03 NTD14N03R?1 dpak straight lead 75 units/rail NTD14N03Rt4 dpak 2500 tape & reel 4 drain 3 source 1 gate 2 drain dpak (surface mount) style 2 case 369d dpak (straight lead) style 2 1 2 3 4 4 drain 1 gate 2 drain 3 source 4 1 2 3 NTD14N03R yww t14 n03
NTD14N03R http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) characteristics symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 3) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v(br) dss 25 ? 28 ? ? ? vdc mv/ c zero gate voltage drain current (v ds = 20 vdc, v gs = 0 vdc) (v ds = 20 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? ? ? 1.0 10 adc gate?body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 3) gate threshold voltage (note 3) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.5 ? 2.0 ? vdc mv/ c static drain?to?source on?resistance (note 3) (v gs = 4.5 vdc, i d = 5 adc) (v gs = 10 vdc, i d = 5 adc) r ds(on) ? ? 117 70.4 130 95 m forward transconductance (note 3) (v ds = 10 vdc, i d = 5 adc) g fs ? 7.0 ? mhos dynamic characteristics input capacitance c iss ? 115 ? pf output capacitance (v ds = 20 vdc, v gs = 0 v, f = 1 mhz) c oss ? 62 ? transfer capacitance ( ds , gs ,) c rss ? 33 ? switching characteristics (note 4) turn?on delay time t d(on) ? 3.8 ? ns rise time ( v gs = 10 vdc, v dd = 10 vdc, t r ? 27 ? turn?off delay time (v gs = 10 vdc , v dd = 10 vdc , i d = 5 adc, r g = 3 ) t d(off) ? 9.6 ? fall time t f ? 2.0 ? gate charge q t ? 1.8 ? nc (v gs = 5 vdc, i d = 5 adc, v ds = 10 vdc ) ( note 3 ) q 1 ? 0.8 ? v ds = 10 vdc) (note 3) q 2 ? 0.7 ? source?drain diode characteristics forward on?voltage ( i s = 5 adc, v gs = 0 vdc ) ( note 3 ) v sd 093 12 v dc (i s = 5 adc , v gs = 0 vdc) (note 3) (i s = 5 adc, v gs = 0 vdc, t j = 125 c) ? ? 0.93 0.82 1.2 ? dc reverse recovery time t rr ? 6.6 ? ns (i s = 5 adc, v gs = 0 vdc, t a ? 4.75 ? (i s = 5 adc , v gs = 0 vdc , di s /dt = 100 a/ s) (note 3) t b ? 1.88 ? reverse recovery stored charge q rr ? 0.002 ? c 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTD14N03R http://onsemi.com 3 1.8 1.6 1.2 1.4 1 0.8 0.6 100 10 1000 8 4 12 2 6 0 14 0.08 0 10 10 4 4 2 v ds , drain?to?source voltage (volts) i d , drain current (amps) 0 v gs , gate?to?source voltage (volts) figure 1. on?region characteristics figure 2. transfer characteristics i d , drain current (amps) 0 0.16 0.20 8 6 4 0.12 0.08 0.04 0 21012 figure 3. on?resistance versus drain current and temperature i d , drain current (amps) figure 4. on?resistance versus drain current and temperature i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) figure 5. on?resistance variation with temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current versus voltage v ds , drain?to?source voltage (volts) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) 14 ?50 50 25 0 ?25 75 125 100 034 2 15 068 410 212 0 0.04 0.12 0.20 02025 15 10 5 v gs = 2.5 v 6 2 6 8 v ds 10 v t j = 25 c t j = ?55 c t j = 125 c 6 t j = 25 c t j = ?55 c t j = 125 c v gs = 10 v v gs = 4.5 v 150 v gs = 0 v t j = 150 c t j = 125 c i d = 5 a v gs = 10 v 0.16 t j = 25 c t j = ?55 c t j = 125 c 14 14 10 8 12 7 v 5 v 10 v 3.5 v 4 v 4.5 v 8 v 6 v 3 v
NTD14N03R http://onsemi.com 4 100 10 1 8 6 4 2 0 70 60 50 40 30 0 10 10 200 15 5 020 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 160 120 80 40 0 5 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage versus total charge v gs , gate?to?source voltage (volts) figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) figure 10. diode forward voltage versus current v sd , source?to?drain voltage (volts) i s , source current (amps) t, time (ns) 0 1.6 2.0 1.2 0.8 0.4 1 10 100 0 0.4 0.2 0.8 1.0 i d = 5 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 20 10 0.6 q 2 c iss v ds = 10 v i d = 5 a v gs = 10 v v gs = 0 v t r t d(off) t d(on) t f v gs v ds q 1 q t t j = 25 c t j = 150 c recommended footprints for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1
NTD14N03R http://onsemi.com 5 package dimensions case 369c issue o dpak (single gauge) style 2: pin 1. gate 2. drain 3. source 4. drain d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ?t? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 case 369d issue o dpak (single gauge) scale 1:1 style 2: pin 1. gate 2. drain 3. source 4. drain 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ???
NTD14N03R http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTD14N03R/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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