? semiconductor components industries, llc, 2000 march, 2000 rev. 0 1 publication order number: bc846bdw1t1/d
npn duals these transistors are designed for general purpose amplifier applications. they are housed in the sot363/sc88 which is designed for low power surface mount applications. ? device marking: bc846bdw1t1 = 1b bc847bdw1t1 = 1f bc847cdw1t1 = 1g bc848bdw1t1 = 1k bc848cdw1t1 = 1l maximum ratings rating symbol bc846 bc847 bc848 unit collector emitter voltage v ceo 65 45 30 v collector base voltage v cbo 80 50 30 v emitter base voltage v ebo 6.0 6.0 5.0 v collector current e continuous i c 100 100 100 madc thermal characteristics characteristic symbol max unit total device dissipation per device fr 5 board (1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr5 = 1.0 x 0.75 x 0.062 in device package shipping ordering information bc846bdw1t1 sot363 http://onsemi.com sot363/sc88 case 419b style 1 3000 units/reel device marking bc847bdw1t1 sot363 3000 units/reel bc847cdw1t1 sot363 3000 units/reel bc848bdw1t1 sot363 3000 units/reel see table q 1 (1) (2) (3) (4) (5) (6) q 2 1 2 3 6 5 4 bc848cdw1t1 sot363 3000 units/reel
bc846bdw1t1, bc847bdw1t1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector emitter breakdown voltage (i c = 10 ma) bc846 series bc847 series bc848 series v (br)ceo 65 45 30 e e e e e e v collector emitter breakdown voltage (i c = 10 m a, v eb = 0) bc846 series bc847 series bc848 series v (br)ces 80 50 30 e e e e e e v collector base breakdown voltage (i c = 10 a) bc846 series bc847 series bc848 series v (br)cbo 80 50 30 e e e e e e v emitter base breakdown voltage (i e = 1.0 a) bc846 series bc847 series bc848 series v (br)ebo 6.0 6.0 5.0 e e e e e e v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo e e e e 15 5.0 na m a on characteristics dc current gain (i c = 10 m a, v ce = 5.0 v) bc846b, bc847b, bc848b bc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846b, bc847b, bc848b bc847c, bc848c h fe e e 200 420 150 270 290 520 e e 450 800 e collector emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) e e e e 0.25 0.6 v base emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) e e 0.7 0.9 e e v base emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 e 660 e 700 770 mv small signal characteristics current gain e bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 e e mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo e e 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k w , bc846b, bc847b, bc848b f = 1.0 khz, bw = 200 hz) bc847c, bc848c nf e e e e 10 4.0 db
bc846bdw1t1, bc847bdw1t1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 http://onsemi.com 3 typical characteristics figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 3. collector saturation region i b , base current (ma) figure 4. baseemitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normal i zed d c c urrent ga i n v, voltage (volts) v ce , c olle c torem i tter v oltage ( v ) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c 55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0
bc846bdw1t1, bc847bdw1t1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 http://onsemi.com 4 typical characteristics figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. currentgain bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 figure 7. dc current gain i c , collector current (ma) figure 8. aono voltage i c , collector current (ma) 2.0 6.0 40 80 100 200 300 400 60 20 40 30 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 0.2 1.0 10 200 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v v ce = 10 v t a = 25 c figure 9. collector saturation region i b , base current (ma) figure 10. baseemitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , c olle c torem i tter v oltage ( v olts) vb , temperature coefficient (mv/ c) q 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma h fe , d c c urrent ga i n (normal i zed) v, voltage (volts) c, c a p a ci tan c e (p f ) f , currentgain bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib v ce = 5 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.4 1.8 2.2 2.6 3.0 0.5 5.0 20 50 100 55 c to 125 c q vb for v be
bc846bdw1t1, bc847bdw1t1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 http://onsemi.com 5 figure 11. thermal response t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0 k 10 k 100 k figure 12. active region safe operating area v ce , collectoremitter voltage (v) 200 1.0 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c z q ja (t) = r(t) r q ja r q ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) r q jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 100 50 10 5.0 2.0 5.0 10 30 45 65 100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 13. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 1.0 m 0.02 0.01
bc846bdw1t1, bc847bdw1t1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 http://onsemi.com 6 information for using the sot363 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot363 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sot363 power dissipation the power dissipation of the sot363 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot363 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 150 milliwatts. p d = 150 c 25 c 833 c/w = 150 milliwatts the 833 c/w for the sot363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. there are other alternatives to achieving higher power dissipation from the sot363 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
bc846bdw1t1, bc847bdw1t1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 http://onsemi.com 7 package dimensions sot363/sc88 case 419b01 issue g style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h 0.10 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 v 0.30 0.40 0.012 0.016 b 0.2 (0.008) mm 123 a g v s h c n j k 654 b d 6 pl
bc846bdw1t1, bc847bdw1t1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong 80044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1418549 phone : 81354878345 email : r14153@onsemi.com fax response line : 3036752167 8003443810 toll free usa/canada on semiconductor website: http://onsemi.com for additional information, please contact your local sales representative. bc846bdw1t1/d thermal clad is a trademark of the bergquist company. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone: (+1) 3033087140 (mf 2:30pm to 5:00pm munich time) email: onlitgerman@hibbertco.com french phone: (+1) 3033087141 (mf 2:30pm to 5:00pm toulouse time) email: onlitfrench@hibbertco.com english phone: (+1) 3033087142 (mf 1:30pm to 5:00pm uk time) email: onlit@hibbertco.com
|
