APT33GF120BR 052-6206 rev c 5-2002 maximum ratings (igbt) all ratings: t c = 25c unless otherwise specified. the fast igbt is a new generation of high voltage power igbts. using non-punch through technology the fast igbt offers superior ruggedness, fast switching speed and low collector-emitter on voltage. ? low forward voltage drop ? ultra low leakage current ? low tail current ? rbsoa and scsoa rated ? high freq. switching to 20khz min typ max 1200 4.5 5.5 6.5 2.7 3.2 3.3 3.9 0.5 5.0 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 0.5ma) gate threshold voltage (v ce = v ge , i c = 700a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) gate-emitter leakage current (v ge = 20v, v ce = 0v) symbol bv ces v ge (th) v ce (on) i ces i ges static electrical characteristics (igbt) unit volts ma na caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com APT33GF120BR 1200 1200 20 52 33 104 66 65 297 -55 to 150 300 usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 APT33GF120BR 1200v 52a to-247 g c e g c e symbol v ces v cgr v ge i c1 i c2 i cm i lm e as p d t j ,t stg t l parameter collector-emitter voltage collector-gate voltage (r ge = 20k ? ) gate emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 105c pulsed collector current 1 @ t c = 25c rbsoa clamped inductive load current @ r g = 11 ? t c = 125 c single pule avalanche energy 2 total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. unit volts amps m j watts c
APT33GF120BR 052-6206 rev c 5-2002 symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe dynamic characteristics (igbt) thermal and mechanical characteristics (igbt and fred) test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25c) v ge = 15v v cc = 0.8v ces i c = i c2 r g =10 ? inductive switching (150c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 ? t j = +150c inductive switching (25c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 ? t j = +25c v ce = 20v, i c = 25a min typ max 1855 2300 230 330 110 170 170 260 19 28 100 150 24 48 85 170 170 260 125 312 25 50 60 120 210 320 74 150 2.8 6 2.8 6 5.6 10 27 60 65 130 190 290 70 140 5.2 10 8.5 20 unit pf nc ns ns mj ns mj s characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-emitter charge gate-collector ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy turn-off switching energy total switching losses turn-on delay time rise time turn-off delay time fall time total switching losses forward transconductance 1 repetitive rating: pulse width limited by maximum junction temperature. 2 i c = i c2 , v cc = 50v, r ge = 25 ? , l = 120h, t j = 25c 3 see mil-std-750 method 3471 apt reserves the right to change, without notice, the specifications and information contained herein. unit c/w oz gm min typ max 0.42 40 0.22 5.90 characteristic junction to case junction to ambient package weight symbol r jc r ja w t
APT33GF120BR 052-6206 rev c 5-2002 c, capacitance (pf) i c , collector current (amperes) i c , collector current (amperes) v ge , gate-to-emitter voltage (volts) i c , collector current (amperes) i c , collector current (amperes) t c =+25c t j =+150c single pulse 250sec. pulse test v ge = 15v i c = i c2 t j = +25c f = 1mhz 8v c ies c res 10v 9v 7v c oes v ge =17, 15 & 13v t c =-55c t c =+150c operation limited by v ce (sat) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 1, typical output characteristics (t j = 25c) figure 2, typical output characteristics (t j = 150c) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 3, typical output characteristics @ v ge = 15v figure 4, maximum forward safe operating area v ce , collector-to-emitter voltage (volts) q g , total gate charge (nc) figure 5, typical capacitance vs collector-to-emitter voltage figure 6, gate charges vs gate-to-emitter voltage rectangular pulse duration (seconds) figure 7, maximum effective transient thermal impedance, junction-to-case vs pulse duration v ce =240v 60 40 20 0 80 60 40 20 0 3,000 1,000 100 10 t c =+25c note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.05 d=0.5 0.2 0.01 single pulse z jc , thermal impedance (c/w) 0.1 0.02 0.5 0.1 0.05 0.01 0.005 0.001 0 4 8 12 16 20 0 4 8 12 16 20 0 2 4 6 8 1 10 100 1200 .01 0.1 1.0 10 50 0 50 100 150 200 250 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 60 40 20 0 100 10 1 20 16 12 8 4 0 v ce =960v v ce =600v 11v 12v 8v 10v 9v 7v v ge =17, 15 & 13v 11v 12v 100s 1ms 10ms
APT33GF120BR 052-6206 rev c 5-2002 v cc = 0.66 v ces v ge = +15v t j = +25c i c = i c2 v cc = 0.66 v ces v ge = +15v t j = +125c r g = 10 ? v cc = 0.66 v ces v ge = +15v r g = 10 ? i c1 0.5 i c2 i c2 i c1 e on e off e on e off 0.5 i c2 i c2 t j , junction temperature (c) t c , case temperature (c) figure 8, typical v ce (sat) voltage vs junction temperature figure 9, maximum collector current vs case temperature t j , junction temperature (c) r g , gate resistance (ohms) figure 10, breakdown voltage vs junction temperature figure 11, typical switching energy losses vs gate resistance t j , junction temperature (c) i c , collector current (amperes) figure 12, typical switching energy losses vs. junction temperature figure 13, typical switching energy losses vs collector curr ent f, frequency (khz) figure 14,typical load current vs frequency -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 0.1 1.0 10 100 1000 60 40 20 0 16 12 8 4 0 4 3 2 1 0 for both: duty cycle = 50% t j = +125c t sink = +90c gate drive as specified power dissapation = 83w i load = i rms of fundamental i c , collector current (amperes) total switching energy losses (mj) bv ces , collector-to-emitter breakdown v ce (sat), collector-to-emitter voltage (normalized) saturation voltage (volts) switching energy losses (mj) switching energy losses (mj) i c , collector current (amperes) 5.0 4.0 2.0 1.5 1.0 1.2 1.1 1 0.9 0.8 0.7 20 1 0.1 100 10 1
APT33GF120BR 052-6206 rev c 5-2002 t0-247 package outline apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. *driver same type as d.u.t. v cc = 0.66 v ces e ts = e on + e off v ce (on) t d (off) t d (on) t f t r 1 figure 15, switching loss test circuit and waveforms figure 16, resistive switching time test circuit and waveforms 2 v cc r g r l = .5 v ces i c2 10% 90% v ge (on) v ce (off) v ge (off) 2 1 from gate drive circuitry d.u.t. b i c i c 90% 10% 90% 10% 10% 90% e off t f t d (off) t d (on) t r e on i c v clamp 100uh v charge a a b d.u.t. driver* v c a r g v c v c d.u.t. v ce (sat) t=2us
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