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?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls 14a, 360v n-channel, logic level, voltage clamping igbts packages jedec to-220ab jedec to-262aa jedec to-263ab terminal diagram n-channel enhancement mode emitter collector gate collector (flange) a emitter collector gate collector (flange) emitter gate collector (flange) a a m emitter gate r 2 r 1 collector features ? logic level gate drive ? internal voltage clamp ? esd gate protection ? t j = 175 o c ? ignition energy capable description this n-channel igbt is a mos gated, logic level device which is intended to be used as an ignition coil driver in auto- motive ignition circuits. unique features include an active voltage clamp between the collector and the gate which pro- vides self clamped inductive switching (scis) capability in ignition circuits. internal diodes provide esd protection for the logic level gate. both a series resistor and a shunt resister are provided in the gate circuit. the development type number for this device is ta49021. packaging availability part number package brand hgtp14n36g3vl to-220ab 14n36gvl hgt1s14n36g3vl to-262aa 14n36gvl hgt1s14n36g3vls to-263ab 14n36gvl note: when ordering, use the entire part number. to obtain the to- 263ab in tape and reel, drop the s and add the suffix t; i.e., HGT1S14N36G3VLT. september 2001 absolute maximum ratings t c = +25 o c, unless otherwise specified hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls units collector-emitter bkdn voltage at 10ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv cer 390 v emitter-collector bkdn voltage at 10ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ecs 24 v collector current continuous at v ge = 5v, t c = +25 o c . . . . . . . . . . . . . . . . . . . . . . . i c25 18 a at v ge = 5v, t c = +100 o c . . . . . . . . . . . . . . . . . . . . . . i c100 14 a gate-emitter voltage (note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 10 v inductive switching current at l = 2.3mh, t c = +25 o c . . . . . . . . . . . . . . . . . . . . . . . i scis 17 a at l = 2.3mh, t c = + 175 o c . . . . . . . . . . . . . . . . . . . . . . i scis 12 a collector to emitter avalanche energy at l = 2.3mh, t c = +25 o c . . . . . . . . . . . . . . . e as 332 mj power dissipation total at t c = +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 100 w power dissipation derating t c > +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . t j , t stg -40 to +175 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 260 o c electrostatic voltage at 100pf, 1500 w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . esd 6 kv note: may be exceeded if i gem is limited to 10ma.
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 specifications hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls electrical specifications t c = +25 o c, unless otherwise specified parameters symbol test conditions limits units min typ max collector-emitter breakdown voltage bv cer i c = 10ma, v ge = 0v r ge = 1k w t c = +175 o c 320 355 400 v t c = +25 o c 330 360 390 v t c = -40 o c 320 350 385 v gate-emitter plateau voltage v gep i c = 7a, v ce = 12v t c = +25 o c - 2.7 - v gate charge q g(on) i c = 7a, v ce = 12v t c = +25 o c - 24 - nc collector-emitter clamp breakdown voltage bv ce(cl) i c = 7a r g = 1000 w t c = +175 o c 350 380 410 v emitter-collector breakdown voltage bv ecs i c = 10ma t c = +25 o c 24 28 - v collector-emitter leakage current i cer v ce = 250v r ge = 1k w t c = +25 o c - - 25 m a t c = +175 o c - - 250 m a collector-emitter saturation voltage v ce(sat) i c = 7a v ge = 4.5v t c = +25 o c - 1.25 1.45 v t c = +175 o c - 1.15 1.6 v i c = 14a v ge = 5v t c = +25 o c - 1.6 2.2 v t c = +175 o c - 1.7 2.9 v gate-emitter threshold voltage v ge(th) i c = 1ma v ce = v ge t c = +25 o c 1.3 1.8 2.2 v gate series resistance r 1 t c = +25 o c - 75 - w gate-emitter resistance r 2 t c = +25 o c 10 20 30 k w gate-emitter leakage current i ges v ge = 10v 330 500 1000 m a gate-emitter breakdown voltage bv ges i ges = 2ma 12 14 - v current turn-off time-inductive load t d(off)i + t f(off)i i c = 7a, r l = 28 w r g = 25 w , l = 550 m h, v cl = 300v, v ge = 5v, t c = +175 o c - 7 - m s inductive use test i scis l = 2.3mh, v g = 5v, t c = +175 o c 12 - - a t c = +25 o c 17 - - a thermal resistance r q jc - - 1.5 o c/w
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls typical performance curves figure 1.transfer characteristics figure 2.saturation characteristics figure 3.collector-emitter current as a function of saturation voltage figure 4.collector-emitter current as a function of saturation voltage figure 5.saturation voltage as a function of junction temperature figure 6.saturation voltage as a function of junction temperature i c e , c o l l e c t o r - e m i t t e r c u r r e n t ( a ) v ge , gate-to-emitter voltage (v) pulse duration = 250 m s, duty cycle <0.5%, v ce = 10v 20 15 10 5 0 25 2 1 3 4 5 +25 o c +175 o c -40 o c i c e , c o l l e c t o r - e m i t t e r c u r r e n t ( a ) 40 20 v ce , collector-to-emitter voltage (v) pulse duration = 250 m s, duty cycle <0.5%, t c = +25 o c 0 2 4 6 8 10 10v 5.0v 4.5v 3.0v 2.5v 4.0v 3.5v 10 0 30 4 v ce(sat) , saturation voltage (v) i c e , c o l l e c t o r e m i t t e r c u r r e n t ( a ) 25 20 15 10 5 0 30 5 3 2 1 0 t c = +175 o c v ge = 5.0v v ge = 4.0v v ge = 4.5v 35 10 +25 o c i c e , c o l l e c t o r e m i t t e r c u r r e n t ( a ) v ce(sat) , saturation voltage (v) +175 o c -40 o c 15 20 25 30 35 0 5 0 1 2 3 4 5 v ge = 4.5v v c e ( s a t ) , s a t u r a t i o n v o l t a g e ( v ) t j , junction temperature ( o c) -25 +25 +75 +125 +175 1.25 1.15 1.05 1.35 v ge = 4.0v v ge = 4.5v v ge = 5.0v i ce = 7a t j , junction temperature ( o c) v c e ( s a t ) , s a t u r a t i o n v o l t a g e ( v ) -25 +25 +75 +125 +175 2.00 1.75 1.50 v ge = 4.5v v ge = 4.0v v ge = 5.0v i ce = 14a 2.25
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls figure 7.collector-emitter current as a function of case temperature figure 8.normalized threshold voltage as a function of junction temperature figure 9.leakage current as a function of junction temperature figure 10.turn-off time as a function of junction temperature typical performance curves (continued) +25 +50 +75 +125 +150 t c , case temperature ( o c) i c e , c o l l e c t o r - e m i t t e r c u r r e n t ( a ) 0 +100 +175 2 4 6 8 10 12 16 18 v ge = 5v 14 20 t j , junction temperature ( o c) -25 +25 +75 +125 +175 v g e ( t h ) , n o r m a l i z e d t h r e s h o l d v o l t a g e 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i ce = 1ma t j , junction temperature ( o c) l e a k a g e c u r r e n t ( m a ) 1e-1 1e0 1e1 1e2 1e3 1e4 +20 +60 +100 +140 +180 v ecs = 20v v ces = 250v t j , junction temperature ( o c) t ( o f f ) i , t u r n o f f t i m e ( m s ) 6.0 5.0 4.5 4.0 3.5 3.0 +25 +50 + 75 +100 +150 +175 +125 5.5 6.5 v ce = 300v, v ge = 5v r ge = 25 w , l = 550 m h 7.0 r l = 37 w , i ce = 7a
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls figure 11.self clamped inductive switching current as a function of inductance figure 12.self clamped inductive switching energy as a function of inductance figure 13.capacitance as a function of collector- emitter voltage figure 14.gate charge waveforms typical performance curves (continued) l, inductance (mh) 0 2 4 6 8 10 20 10 i c , i n d u c t i v e s w i t c h i n g c u r r e n t ( a ) 15 5 25 +25 o c +175 o c v ge = 5v 0 2 4 6 8 10 l, inductance (mh) e a s , e n e r g y ( m j ) 150 200 250 300 350 400 450 500 550 600 650 +25 o c +175 o c v ge = 5v c , c a p a c i t a n c e ( p f ) 0 5 10 15 20 25 v ce , collector-to-emitter voltage (v) 400 600 800 1400 1600 1800 2000 c res c oes c ies 1200 1000 frequency = 1mhz 200 0 q g , gate charge (nc) 12 10 8 6 4 2 0 6 5 1 0 4 3 2 0 5 15 20 25 30 v c e , c o l l e c t o r - e m i t t e r v o l t a g e ( v ) v g e , g a t e - e m i t t e r v o l t a g e ( v ) ref i g = 1ma, r l = 1.7 w , t c = +25 o c 10 v ce = 12v v ce = 4v v ce = 8v
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls figure 15.normalized transient thermal impedance, junction to case figure 16.breakdown voltage as a function of gate-emitter resistance test circuits figure 17.self clamped inductive switching current test circuit figure 18.clamped inductive switching time test circuit typical performance curves (continued) t 1 ,rectangular pulse duration (s) 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.02 0.05 0.5 z q j c , n o r m a l i z e d t h e r m a l r e s p o n s e 0.2 0.1 0.01 t 1 t 2 pd duty factor, d = t 1 / t 2 peak t j = (p d x z q jc x r q jc ) + t c single pulse r ge , gate-to- emitter resistance ( w ) 0 2000 4000 6000 8000 10000 325 330 335 340 345 350 355 b v c e r , c o l l e c t o r - e m i t t e r 25 o c 175 o c b k d n v o l t a g e ( v ) r g g c e v dd 2.3mh dut r gen = 25 w 5v r gen = 50 w + - v cc dut 300v 10v c g e r ge = 50 w 1/r g = 1/r gen + 1/r ge l = 550 m h r l
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls handling precautions for igbt?s insulated gate bipolar transistors are susceptible to gate- insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbt?s are currently being extensively used in pro- duction by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no dam- age problems due to electrostatic discharge. igbt?s can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ? ?eccosorbd ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating -the gate-voltage rating of v gem may be exceeded if i gem is limited to 10ma. ? trademark emerson and cumming, inc . intersil corporation igbt product is covered by one or more of the following u.s. patents: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls to-220ab (alternate version) 3 lead jedec to-220ab plastic package e ?p d l l 1 60 o b 1 b e e 1 h 1 1 j 1 2 3 term. 4 q c a 1 a symbol inches millimeters notes min max min max a 0.170 0.180 4.32 4.57 - a 1 0.048 0.052 1.22 1.32 2, 4 b 0.030 0.034 0.77 0.86 2, 4 b 1 0.045 0.055 1.15 1.39 2, 4 c 0.018 0.022 0.46 0.55 2, 4 d 0.590 0.610 14.99 15.49 - e 0.395 0.405 10.04 10.28 - e 0.100 typ 2.54 typ 5 e 1 0.200 bsc 5.08 bsc 5 h 1 0.235 0.255 5.97 6.47 - j 1 0.095 0.105 2.42 2.66 6 l 0.530 0.550 13.47 13.97 - l 1 0.110 0.130 2.80 3.30 3 ?p 0.149 0.153 3.79 3.88 - q 0.105 0.115 2.66 2.92 - notes: 1.these dimensions are within allowable dimensions of rev. j of jedec to-220ab outline dated 3-24-87. 2.dimension (without solder). 3.solder finish uncontrolled in this area. 4.add typically 0.002 inches (0.05mm) for solder plating. 5.position of lead to be measured 0.250 inches (6.35mm) from bot- tom of dimension d. 6.position of lead to be measured 0.100 inches (2.54mm) from bot- tom of dimension d. 7.controlling dimension:inch. 8.revision 3 dated 7-97.
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls to-262aa 3 lead jedec to-262aa plastic package fq h 1 d l 1 l 1 e e 1 b b 1 a 1 a c j 1 e 15 o 2 3 term. 4 60 o symbol inches millimeters notes min max min max a 0.170 0.180 4.32 4.57 - a 1 0.048 0.052 1.22 1.32 3, 4 b 0.030 0.034 0.77 0.86 3, 4 b 1 0.045 0.055 1.15 1.39 3, 4 c 0.018 0.022 0.46 0.55 3, 4 d 0.405 0.425 10.29 10.79 - e 0.395 0.405 10.04 10.28 - e 0.100 typ 2.54 typ 5 e 1 0.200 bsc 5.08 bsc 5 h 1 0.045 0.055 1.15 1.39 - j 1 0.095 0.105 2.42 2.66 6 l 0.530 0.550 13.47 13.97 - l 1 0.110 0.130 2.80 3.30 2 notes: 1.these dimensions are within allowable dimensions of rev. a of jedec to-262aa outline dated 6-90. 2.solder finish uncontrolled in this area. 3.dimension (without solder). 4.add typically 0.002 inches (0.05mm) for solder plating. 5.position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension d. 6.position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension d. 7.controlling dimension:inch. 8.revision 5 dated 7-97.
?2001 fairchild semiconductor corporation hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls rev. a1 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls to-263ab surface mount jedec to-263ab plastic package to-263ab 24mm tape and reel minimum pad size recommended for surface-mounted applications e a 1 a h 1 d l b e e1 l 2 b 1 l 1 c term. 4 1 3 1 3 l 3 b 2 term. 4 0.450 0.350 0.150 (3.81) 0.080 typ (2.03) 0.700 (11.43) (8.89) (17.78) 0.062 typ (1.58) j 1 symbol inches millimeters notes min max min max a 0.170 0.180 4.32 4.57 - a 1 0.048 0.052 1.22 1.32 4, 5 b 0.030 0.034 0.77 0.86 4, 5 b 1 0.045 0.055 1.15 1.39 4, 5 b 2 0.310 - 7.88 - 2 c 0.018 0.022 0.46 0.55 4, 5 d 0.405 0.425 10.29 10.79 - e 0.395 0.405 10.04 10.28 - e 0.100 typ 2.54 typ 7 e 1 0.200 bsc 5.08 bsc 7 h 1 0.045 0.055 1.15 1.39 - j 1 0.095 0.105 2.42 2.66 - l 0.175 0.195 4.45 4.95 - l 1 0.090 0.110 2.29 2.79 4, 6 l 2 0.050 0.070 1.27 1.77 3 l 3 0.315 - 8.01 - 2 notes: 1.these dimensions are within allowable dimensions of rev. c of jedec to-263ab outline dated 2-92. 2.l 3 and b 2 dimensions established a minimum mounting surface for terminal 4. 3.solder finish uncontrolled in this area. 4.dimension (without solder). 5.add typically 0.002 inches (0.05mm) for solder plating. 6. l 1 is the terminal length for soldering. 7. position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension d. 8.controlling dimension:inch. 9.revision 10 dated 5-99. 2.0mm 4.0mm 1.75mm 1.5mm dia. hole c l user direction of feed 16mm 24mm 330mm 100mm 13mm 30.4mm 24.4mm cover tape general information 1. 800 pieces per reel. 2. order in multiples of full reels only. 3. meets eia-481 revision "a" specifications. access hole 40mm min.
rev. h4 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quietserie? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? silent switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx? star*power is used under license disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. ?2001 fairchild semiconductor corporation

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