1 transistor 2sd1478, 2sd1478a silicon npn epitaxial planer type darlington for low-frequency amplification n features l forward current transfer ratio h fe is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: h fe = 4000 to 20000. l a shunt resistor is omitted from the driver. n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 30 60 25 50 5 750 500 200 150 C55 ~ +150 unit v v v ma ma mw ?c ?c 2sd1478 2sd1478a 2sd1478 2sd1478a n electrical characteristics (ta=25?c) parameter collector cutoff current emitter cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter voltage transition frequency symbol i cbo i ebo v cbo v ceo v ebo h fe *1 v ce(sat) v be(sat) f t conditions v cb = 25v, i e = 0 v eb = 4v, i c = 0 i c = 100 m a, i e = 0 i c = 1ma, i b = 0 i c = 1ma, i b = 0 i e = 100 m a, i c = 0 v ce = 10v, i c = 500ma *2 i c = 500ma, i b = 0.5ma *2 i c = 500ma, i b = 0.5ma *2 v cb = 10v, i e = C50ma, f = 200mhz min 30 60 25 50 5 4000 typ 200 max 100 100 20000 2.5 3.0 unit na na v v v v v mhz *2 pulse measurement 2sd1478 2sd1478a 2sd1478 2sd1478a unit: mm 1:base jedec:toC236 2:emitter eiaj:scC59 3:collector mini type package 2.8 +0.2 ?.3 1.5 +0.25 ?.05 0.65 0.15 0.65 0.15 3 1 2 0.95 0.95 1.9 0.2 0.4 +0.1 ?.05 1.1 +0.2 ?.1 0.8 0.4 0.2 0 to 0.1 0.16 +0.1 ?.06 1.45 0.1 to 0.3 2.9 +0.2 ?.05 marking symbol : 2n (2sd1478) 2o (2sd1478a) internal connection b c e *1 h fe1 rank classification rank q r h fe1 4000 ~ 10000 8000 ~ 20000 2sd1478 2nq 2nr 2sd1478a 2oq 2or marking symbol
2 transistor 2sd1478, 2sd1478a p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c c ob v cb 0 200 160 40 120 80 0 240 200 160 120 80 40 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 0.1 1 10 100 0.3 3 30 0.1 0.3 1 3 10 30 100 300 1000 ta=25?c i b =50 m a 45 m a 40 m a 35 m a 5 m a 10 m a 15 m a 20 m a 25 m a 30 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =1000 25?c ?5?c ta=75?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =1000 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 10 2 10 3 10 4 10 5 v ce =10v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 0 6 5 4 3 2 1 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
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