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  1 transistors with built-in resistor unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z (un5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511d/511e/511f/ 511h/511l/511m/511n/511t/511v/511z) silicon pnp epitaxial planer transistor for digital circuits  features  costs can be reduced through downsizing of the equipment and reduction of the number of parts.  s-mini type package, allowing automatic insertion through tape packing and magazine packing.  resistance by part number marking symbol (r 1 )(r 2 )  unr5111 6a 10k ? 10k ?  unr5112 6b 22k ? 22k ?  unr5113 6c 47k ? 47k ?  unr5114 6d 10k ? 47k ?  unr5115 6e 10k ?  unr5116 6f 4.7k ?  unr5117 6h 22k ?  unr5118 6i 0.51 ? 5.1k ?  unr5119 6k 1k ? 10k ?  unr5110 6l 47k ?  unr511d 6m 47k ? 10k ?  unr511e 6n 47k ? 22k ?  unr511f 6o 4.7k ? 10k ?  unr511h 6p 2.2k ? 10k ?  unr511l 6q 4.7k ? 4.7k ?  unr511m ei 2.2k ? 47k ?  unr511n ew 4.7k ? 47k ?  unr511t ey 22k ? 47k ?  unr511v fc 2.2k ? 2.2k ?  unr511z fe 4.7k ? 22k ?  absolute maximum ratings (ta=25?c) 1 : base 2 : emitter eiaj : sc?0 3 : collector smini3-g1 package unit: mm internal connection parameter symbol ratings unit collector to base voltage v cbo ?0 v collector to emitter voltage v ceo ?0 v collector current i c ?00 ma total power dissipation p t 150 mw junction temperature t j 150 ?c storage temperature t stg ?5 to +150 ?c 2.1 0.1 1.3 0.1 0.3 +0.1 ?0.0 2.0 0.2 1.25 0.10 (0.425) 1 3 2 (0.65) (0.65) 0.2 0.1 0.9 0.1 0 to 0.1 0.9 +0.2 ?0.1 0.15 +0.10 ?0.05 5 10 b c r1 r2 e not e ) the p art n umbe r s in the p arenthesis sh o w co n ventional pa r t n umbe r .
2 transistors with built-in resistor unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z  electrical characteristics (ta=25?c) parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = ?0v, i e = 0 0.1 a i ceo v ce = ?0v, i b = 0 0.5 a unr5111 ?0.5 unr5112/5114/511e/511d/511m/511n/511t ?0.2 unr5113 ?0.1 unr5115/5116/5117/5110 i ebo v eb = ?v, i c = 0 ?0.01 ma unr511f/511h ?.0 unr5119 ?.5 unr5118/511l/511v ?.0 unr511z ?0.4 collector to base voltage v cbo i c = ?0 a, i e = 0 ?0 v unr511n/511t/511v/511z ?0 collector to emitter voltage v ceo i c = ?ma, i b = 0 ?0 v unr511n/511t ?0 unr5111 35 unr5112/511e 60 unr5113/5114/511m 80 unr5115*/5116*/5117*/5110* 160 460 unr511f/511d/5119/511h h fe v ce = ?0v, i c = ?ma 30 unr5118/511l 20 unr511n/511t 80 400 unr511v 6 20 un r 511z 0 200 collector to emitter saturation voltage v ce(sat) i c = ?0ma, i b = ?0.3ma ?0.25 v unr511v i c = ?0ma, i b = ?.5ma ?0.25 output voltage high level v oh v cc = ?v, v b = ?0.5v, r l = 1k ? ?.9 v output voltage low level v cc = ?v, v b = ?.5v, r l = 1k ? ?0.2 unr5113 v ol v cc = ?v, v b = ?.5v, r l = 1k ? ?0.2 v unr511d v cc = ?v, v b = ?0v, r l = 1k ? ?0.2 unr511e v cc = ?v, v b = ?v, r l = 1k ? ?0.2 transition frequency f t v cb = ?0v, i e = 1ma, f = 200mhz 80 mhz unr511z v cb = ?0v, i e = 1ma, f = 200mhz 150 unr5111/5114/5115 10 unr5112/5117/511t 22 unr5113/5110/511d/511e 47 unr5116/511f/511l/511n/511z r 1 (?0%) 4.7 (+30%) k ? unr5118 0.51 unr5119 1 unr511h/511m/511v 2.2 emitter cutoff current forward current transfer ratio input resis- tance * h fe rank classification (unr5115/5116/5117/5110) rank q r s h fe 160 to 260 210 to 340 290 to 460
3 transistors with built-in resistor unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z  electrical characteristics (continued) (ta=25?c) parameter symbol conditions min typ max unit unr5111/5112/5113/511l 0.8 1.0 1.2 unr5114 0.17 0.21 0.25 unr5118/5119 0.08 0.1 0.12 unr511d 4.7 unr511e 2.14 unr511f/511t r 1 /r 2 0.47 unr511h 0.17 0.22 0.27 unr511m 0.047 unr511n 0.1 unr511v 1.0 unr511z 0.21 resis- tance ratio
4 transistors with built-in resistor common characteristics chart p t ?ta characteristics charts of unr5111 i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o 0 0 ?2 2 ?0 ? ? ? ?0 ?20 ?0 ?60 ?40 ?00 ?0 ?0 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =?.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 160 40 120 80 240 200 160 120 80 40 ambient temperature ta ( ? c ) total power dissipation p t ( mw ) unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z
5 transistors with built-in resistor characteristics charts of unr5112 i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o characteristics charts of unr5113 i c ?v ce v ce(sat) ?i c h fe ?i c unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z 0 0 12 2 10 4 8 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c
6 transistors with built-in resistor unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z c ob ?v cb i o ?v in v in ?i o characteristics charts of unr5114 i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.1 0.3 0.1 0.3 1 3 10 30 100 300 1000 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c
7 transistors with built-in resistor unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z characteristics charts of unr5115 i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o characteristics charts of unr5116 i c ?v ce v ce(sat) ?i c h fe ?i c 0 0 12 2 10 4 8 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c
8 transistors with built-in resistor c ob ?v cb i o ?v in v in ?i o characteristics charts of unr5117 i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 120 100 80 60 40 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c
9 transistors with built-in resistor unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z characteristics charts of unr5118 i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o characteristics charts of unr5119 i c ?v ce v ce(sat) ?i c h fe ?i c 0 0 12 2 10 4 8 6 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.4ma 0.3ma 0.2ma 0.1ma 0.5ma 0.6ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.4ma 0.3ma 0.6ma 0.9ma 0.8ma 0.7ma 0.5ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c
10 transistors with built-in resistor c ob ?v cb i o ?v in v in ?i o characteristics charts of unr5110 i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 120 100 80 60 40 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c
11 transistors with built-in resistor unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z characteristics charts of unr511d i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o characteristics charts of unr511e i c ?v ce v ce(sat) ?i c h fe ?i c 0 0 12 2 10 4 8 6 60 50 40 30 20 10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 1.5 10 30 100 300 1000 3000 10000 4.0 3.5 3.0 2.5 2.0 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 60 50 40 30 20 10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c
12 transistors with built-in resistor c ob ?v cb i o ?v in v in ?i o characteristics charts of unr511f i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 1.5 10 30 100 300 1000 3000 10000 4.0 3.5 3.0 2.5 2.0 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c
13 transistors with built-in resistor characteristics charts of unr511h i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb v in ?i o characteristics charts of unr511l i c ?v ce v ce(sat) ?i c h fe ?i c 0 0 12 2 10 4 8 6 120 100 80 60 40 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 0.5ma 0.3ma 0.4ma 0.2ma 0.1ma 0.01 1 3 0.1 1 10 100 10 30 100 300 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 240 200 160 120 80 40 1 3 10 30 100 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 1 6 5 4 3 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 0.01 0.1 0.3 0.1 1 10 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.2ma 0.4ma 0.6ma 0.8ma 0.01 0.03 1 3 0.1 0.3 1 3 10 30 100 10 30 100 300 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 240 200 160 120 80 40 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z
14 transistors with built-in resistor c ob ?v cb v in ?i o characteristics charts of unr511m i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o 0 1 6 5 4 3 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 0.01 0.1 0.3 0.1 1 10 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.2ma 0.1ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.001 0.003 1 3 0.01 0.03 0.1 0.3 1 3 10 10 30 100 300 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 3 100 200 300 500 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 10 8 6 4 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 0.4 10 1 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z
15 transistors with built-in resistor characteristics charts of unr511n i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o characteristics charts of unr511t i c ?v ce v ce(sat) ?i c h fe ?i c 0 0 12 2 10 4 8 6 50 150 100 200 175 125 75 25 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.7ma 0.8ma 0.9ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 1 0.1 1 10 10 100 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 300 250 200 150 100 50 10 100 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 0 1 6 5 4 3 2 1 10 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 0.4 10 100 1000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 50 150 100 200 175 125 75 25 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.7ma 0.8ma 0.9ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 1 0.1 1 10 10 100 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 300 250 200 150 100 50 10 100 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z
16 transistors with built-in resistor i o ?v in v in ?i o characteristics charts of unr511v i c ?v ce v ce(sat) ?i c h fe ?i c i o ?v in v in ?i o 1 0.4 10 100 1000 10000 1.4 1.2 1 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 12 10 8 6 4 2 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.7ma 0.8ma 0.9ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 1 0.1 1 10 10 100 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 12 10 8 6 4 2 10 100 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c 1 0.4 10 100 1000 10000 1.4 1.2 1 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z
17 transistors with built-in resistor characteristics charts of unr511z i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o 0 1 6 5 4 3 2 1 10 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 0.4 10 100 1000 10000 1.4 1.2 1 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o = 5v ta=25 ? c 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25 ? c 0 0 12 2 10 4 8 6 50 150 100 200 175 125 75 25 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b = 1.0ma 0.7ma 0.8ma 0.9ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 1 0.1 1 10 10 100 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 1 300 250 200 150 100 50 10 100 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10v ta=75 ? c 25 ? c 25 ? c unr5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511d/511e/511f/511h/511l/511m/511n/511t/511v/511z
please read the following notes before using the datasheets a. these materials are intended as a reference to assist customers with the selection of panasonic semiconductor products best suited to their applications. due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. b. panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. therefore, panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. c. these materials are solely intended for a customer's individual use. therefore, without the prior written approval of panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the internet or in any other way, is prohibited. request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese govern- ment if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative character- istics and applied circuit examples of the products. it does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) the products described in this material are intended to be used for standard applications or gen- eral electronic equipment (such as office equipment, communications equipment, measuring in- struments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (4) the products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. at the final stage of your design, purchas- ing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) when using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) no part of this material may be reprinted or reproduced by any means without written permission from our company. 2001 mar


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