jiang su changjiang electronics technology co. , ltd to - 92 plastic - encapsulate transistors b f42 1 transistor ? pn p ? bf42 3 features power dissipation p cm : 0.625w ? t amb=25 ??? collector current i cm : - 50ma c ollector - base voltage v (br) cbo : bf42 1 - 300 v bf42 3 - 250 v oper ating and storage junction temp erature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage bf421 bf423 v cbo i c = - 10 0 | a ? i e =0 - 300 - 250 v c ollector - emitter breakdown voltage bf421 bf423 v ceo i c = - 1ma , i b =0 - 300 - 250 v emitter - base breakdown voltage v e b o i e = - 100 | a ? i c =0 - 5 v collector cut - off current i cbo v cb = - 200 v , i e =0 - 0.01 | a emitter cut - off current i eb o v e b = - 5 v , i c =0 - 0.05 | a dc current gain h fe v ce = - 20 v , i c = - 25m a 50 collector - emitter saturation voltage v ce(sat) i c = - 30 ma , i b = - 5 m a - 0.6 v transition frequency f t v ce = - 10v, i c = - 10ma 60 mhz 1 2 3 to ?a 92 1. emitter 2. collector 3 . base
d b e a a1 c l d1 e e1 t o-92 p ackage outline dimensions symbol a a1 b c d d1 e e e1 l ? min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 dimensions in millimeters dimensions in inches 0.050typ 1.270typ |?
|
